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IS61NVP409618B-250B3L PDF预览

IS61NVP409618B-250B3L

更新时间： 2024-10-13 20:51:11
品牌 Logo 应用领域
美国芯成 - ISSI 时钟静态存储器内存集成电路
页数 文件大小 规格书
39页 1183K
描述
ZBT SRAM, 4MX18, 2.6ns, CMOS, PBGA165, TFBGA-165

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IS61NVP409618B-250B3L 技术参数

是否Rohs认证： 符合生命周期：Active
零件包装代码：BGA包装说明：TBGA, BGA165,11X15,40
针数：165Reach Compliance Code：compliant
ECCN代码：3A991.B.2.AHTS代码：8542.32.00.41
Factory Lead Time：10 weeks风险等级：5.69
最长访问时间：2.6 ns最大时钟频率 (fCLK)：250 MHz
I/O 类型：COMMONJESD-30 代码：R-PBGA-B165
JESD-609代码：e1长度：15 mm
内存密度：75497472 bit内存集成电路类型：ZBT SRAM
内存宽度：18湿度敏感等级：3
功能数量：1端子数量：165
字数：4194304 words字数代码：4000000
工作模式：SYNCHRONOUS最高工作温度：70 °C
最低工作温度：组织：4MX18
输出特性：3-STATE封装主体材料：PLASTIC/EPOXY
封装代码：TBGA封装等效代码：BGA165,11X15,40
封装形状：RECTANGULAR封装形式：GRID ARRAY, THIN PROFILE
并行/串行：PARALLEL峰值回流温度（摄氏度）：260
电源：2.5 V认证状态：Not Qualified
座面最大高度：1.2 mm最小待机电流：2.38 V
子类别：SRAMs最大压摆率：0.25 mA
最大供电电压 (Vsup)：2.625 V最小供电电压 (Vsup)：2.375 V
标称供电电压 (Vsup)：2.5 V表面贴装：YES
技术：CMOS温度等级：COMMERCIAL
端子面层：Tin/Silver/Copper (Sn/Ag/Cu)端子形式：BALL
端子节距：1 mm端子位置：BOTTOM
处于峰值回流温度下的最长时间：10宽度：13 mm
Base Number Matches：1

IS61NVP409618B-250B3L 数据手册

 浏览型号IS61NVP409618B-250B3L的Datasheet PDF文件第2页浏览型号IS61NVP409618B-250B3L的Datasheet PDF文件第3页浏览型号IS61NVP409618B-250B3L的Datasheet PDF文件第4页浏览型号IS61NVP409618B-250B3L的Datasheet PDF文件第5页浏览型号IS61NVP409618B-250B3L的Datasheet PDF文件第6页浏览型号IS61NVP409618B-250B3L的Datasheet PDF文件第7页 
IS61NLP204836B/IS61NVP/NVVP204836B  
IS61NLP409618B/IS61NVP/NVVP409618B  
DECEMBER 2017  
2M x 36 and 4M x 18  
72Mb, PIPELINE 'NO WAIT' STATE BUS SRAM  
FEATURES  
DESCRIPTION  
The72Megproductfamilyfeatureshigh-speed,low-power  
synchronousstaticRAMsdesignedtoprovideaburstable,  
high-performance, 'no wait' state, device for networking  
and communications applications. They are organized as  
2,096,952 words by 36 bits and 4,193,904 words by 18  
bits, fabricated with ISSI's advanced CMOS technology.  
• 100 percent bus utilization  
• No wait cycles between Read and Write  
• Internal self-timed write cycle  
• Individual Byte Write Control  
• Single R/W (Read/Write) control pin  
Incorporating a 'no wait' state feature, wait cycles are  
eliminated when the bus switches from read to write, or  
write to read. This device integrates a 2-bit burst counter,  
high-speed SRAM core, and high-drive capability outputs  
into a single monolithic circuit.  
• Clock controlled, registered address,  
data and control  
• Interleaved or linear burst sequence control us-  
ing MODE input  
Allsynchronousinputspassthroughregistersarecontrolled  
byapositive-edge-triggeredsingleclockinput.Operations  
may be suspended and all synchronous inputs ignored  
when Clock Enable, CKE is HIGH. In this state the internal  
device will hold their previous values.  
• Three chip enables for simple depth expansion  
and address pipelining  
• Power Down mode  
• Common data inputs and data outputs  
• CKE pin to enable clock and suspend operation  
AllRead,WriteandDeselectcyclesareinitiatedbytheADV  
input. When the ADV is HIGH the internal burst counter  
is incremented. New external addresses can be loaded  
when ADV is LOW.  
• JEDEC 100-pin TQFP, 165-ball PBGA and 119-  
ball PBGA packages  
Write cycles are internally self-timed and are initiated  
by the rising edge of the clock inputs and when WE is  
LOW. Separate byte enables allow individual bytes to be  
written.  
• Power supply:  
NLP: Vdd 3.3V (± 5%), Vddq 3.3V/2.5V (± 5%)  
NVP: Vdd 2.5V (± 5%), Vddq 2.5V (± 5%)  
NVVP: Vdd 1.8V (± 5%), Vddq 1.8V (± 5%)  
• JTAG Boundary Scan for PBGA packages  
• Industrial temperature available  
• Lead-free available  
A burst mode pin (MODE) defines the order of the burst  
sequence.WhentiedHIGH,theinterleavedburstsequence  
is selected. When tied LOW, the linear burst sequence is  
selected.  
FAST ACCESS TIME  
Symbol  
tkq  
Parameter  
250  
2.8  
4
200  
3.1  
5
166  
3.8  
6
Units  
ns  
Clock Access Time  
Cycle Time  
tkc  
ns  
Frequency  
250  
200  
166  
MHz  
Copyright © 2017 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no  
liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on  
any published information and before placing orders for products.  
Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can reasonably be expected to cause  
failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such applications unless Integrated Silicon Solution, Inc. receives written  
assurance to its satisfaction, that:  
a.) the risk of injury or damage has been minimized;  
b.) the user assume all such risks; and  
c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances  
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774  
1
Rev. B2  
12/15/2017  
1234567...39

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与IS61NVP409618B-250B3L相关器件

型号 品牌 获取价格 描述 数据表
IS61NVP409618B-250TQLI ISSI

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 		ZBT SRAM, 4MX18, 2.6ns, CMOS, PQFP100, TQFP-100
IS61NVP51218A ISSI

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 		256K x 36 and 512K x 18 9Mb, PIPELINE (NO WAIT) STATE BUS SRAM
IS61NVP51218A-200B2 ISSI

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 		256K x 36 and 512K x 18 9Mb, PIPELINE (NO WAIT) STATE BUS SRAM
IS61NVP51218A-200B2I ISSI

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 		256K x 36 and 512K x 18 9Mb, PIPELINE (NO WAIT) STATE BUS SRAM
IS61NVP51218A-200B2I-TR ISSI

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 		ZBT SRAM, 512KX18, 3.1ns, CMOS, PBGA119
IS61NVP51218A-200B2-TR ISSI

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 		ZBT SRAM, 512KX18, 3.1ns, CMOS, PBGA119
IS61NVP51218A-200B3 ISSI

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 		256K x 36 and 512K x 18 9Mb, PIPELINE (NO WAIT) STATE BUS SRAM
IS61NVP51218A-200B3I ISSI

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 		256K x 36 and 512K x 18 9Mb, PIPELINE (NO WAIT) STATE BUS SRAM
IS61NVP51218A-200B3I-TR ISSI

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 		ZBT SRAM, 512KX18, 3.1ns, CMOS, PBGA165
IS61NVP51218A-200B3-TR ISSI

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 		ZBT SRAM, 512KX18, 3.1ns, CMOS, PBGA165

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