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IS61NLF204818A-6.5B3 PDF预览

IS61NLF204818A-6.5B3

更新时间: 2024-09-15 05:39:35
品牌 Logo 应用领域
美国芯成 - ISSI 存储内存集成电路静态存储器时钟
页数 文件大小 规格书
23页 364K
描述
STATE BUS SRAM

IS61NLF204818A-6.5B3 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:BGA
包装说明:TBGA, BGA165,11X15,40针数:165
Reach Compliance Code:not_compliantECCN代码:3A991.B.2.A
HTS代码:8542.32.00.41风险等级:5.83
最长访问时间:6.5 ns最大时钟频率 (fCLK):133 MHz
I/O 类型:COMMONJESD-30 代码:R-PBGA-B165
JESD-609代码:e0长度:15 mm
内存密度:37748736 bit内存集成电路类型:ZBT SRAM
内存宽度:18功能数量:1
端子数量:165字数:2097152 words
字数代码:2000000工作模式:SYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:2MX18输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:TBGA
封装等效代码:BGA165,11X15,40封装形状:RECTANGULAR
封装形式:GRID ARRAY, THIN PROFILE并行/串行:PARALLEL
峰值回流温度(摄氏度):NOT SPECIFIED电源:2.5/3.3,3.3 V
认证状态:Not Qualified座面最大高度:1.2 mm
最大待机电流:0.1 A最小待机电流:3.14 V
子类别:SRAMs最大压摆率:0.4 mA
最大供电电压 (Vsup):3.465 V最小供电电压 (Vsup):3.135 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:BALL
端子节距:1 mm端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:13 mm
Base Number Matches:1

IS61NLF204818A-6.5B3 数据手册

 浏览型号IS61NLF204818A-6.5B3的Datasheet PDF文件第2页浏览型号IS61NLF204818A-6.5B3的Datasheet PDF文件第3页浏览型号IS61NLF204818A-6.5B3的Datasheet PDF文件第4页浏览型号IS61NLF204818A-6.5B3的Datasheet PDF文件第5页浏览型号IS61NLF204818A-6.5B3的Datasheet PDF文件第6页浏览型号IS61NLF204818A-6.5B3的Datasheet PDF文件第7页 
IS61NLF102436A/IS61NVF102436A  
IS61NLF204818A/IS61NVF204818A  
1M x 36 and 2M x 18  
36Mb, FLOW THROUGH 'NO WAIT'  
STATE BUS SRAM  
JUNE 2008  
DESCRIPTION  
FEATURES  
Theꢀ36ꢀMegꢀ'NLF/NVF'ꢀproductꢀfamilyꢀfeatureꢀhigh-speed,ꢀ  
low-powerꢀsynchronousꢀstaticꢀRAMsꢀdesignedꢀtoꢀprovideꢀ  
aꢀburstable,ꢀhigh-performance,ꢀ'noꢀwait'ꢀstate,ꢀdeviceꢀforꢀ  
networkingandcommunicationsapplications.Theyareꢀ  
organizedꢀasꢀ1Mꢀwordsꢀbyꢀ36ꢀbitsꢀandꢀ2Mꢀꢀwordsꢀbyꢀ18ꢀ  
bits, fabricated with ISSI'sꢀadvancedꢀCMOSꢀtechnology.  
•ꢀ 100ꢀpercentꢀbusꢀutilization  
•ꢀ NoꢀwaitꢀcyclesꢀbetweenꢀReadꢀandꢀWrite  
•ꢀ Internalꢀself-timedꢀwriteꢀcycle  
•ꢀ IndividualꢀByteꢀWriteꢀControl  
•ꢀ SingleꢀRead/Writeꢀcontrolꢀpin  
Incorporatingꢀ aꢀ 'noꢀ wait'ꢀ stateꢀ feature,ꢀ waitꢀ cyclesꢀ areꢀ  
eliminated when the bus switches from read to write, or  
writeꢀtoꢀread.ꢀThisꢀdeviceꢀintegratesꢀaꢀ2-bitꢀburstꢀcounter,ꢀ  
high-speedꢀSRAMꢀcore,ꢀandꢀhigh-driveꢀcapabilityꢀoutputsꢀ  
into a single monolithic circuit.  
•ꢀ Clockꢀcontrolled,ꢀregisteredꢀaddress,ꢀꢀ  
data and control  
•ꢀ Interleavedꢀorꢀlinearꢀburstꢀsequenceꢀcontrolꢀus-  
ing MODE input  
Allsynchronousinputspassthroughregistersarecontrolled  
byapositive-edge-triggeredsingleclockinput.Operationsꢀ  
may be suspended and all synchronous inputs ignored  
when Clock Enable, CKEꢀisꢀHIGH.ꢀInꢀthisꢀstateꢀtheꢀinternalꢀ  
device will hold their previous values.  
•ꢀ Threeꢀchipꢀenablesꢀforꢀsimpleꢀdepthꢀexpansionꢀ  
and address pipelining  
•ꢀ PowerꢀDownꢀmode  
•ꢀ Commonꢀdataꢀinputsꢀandꢀdataꢀoutputs  
•ꢀ CKE pin to enable clock and suspend operation  
•ꢀ JEDECꢀ100-pinꢀTQFPꢀandꢀ165-ballꢀpackages  
AllRead,WriteandDeselectcyclesareinitiatedbytheADVꢀ  
input.ꢀWhenꢀtheꢀADVꢀisꢀHIGHꢀtheꢀinternalꢀburstꢀcounterꢀ  
isincremented.Newexternaladdressescanbeloadedꢀ  
whenꢀADVꢀisꢀLOW.  
•ꢀ Powerꢀsupply:  
Writeꢀ cyclesꢀ areꢀ internallyꢀ self-timedꢀ andꢀ areꢀ initiatedꢀ  
by the rising edge of the clock inputs and when WE is  
LOW.ꢀSeparateꢀbyteꢀenablesꢀallowꢀindividualꢀbytesꢀtoꢀbeꢀ  
written.  
NVF:ꢀVd d 2.5Vꢀ(±ꢀ5%),ꢀVd d q ꢀ2.5Vꢀ(±ꢀ5%)  
NLF:ꢀVd d ꢀ3.3Vꢀ(±ꢀ5%),ꢀVd d q ꢀ3.3V/2.5Vꢀ(±ꢀ5%)  
•ꢀ JTAGꢀBoundaryꢀScanꢀforꢀPBGAꢀpackages  
•ꢀ Industrialꢀtemperatureꢀavailable  
•ꢀ Lead-freeꢀavailable  
ꢀAꢀburstꢀmodeꢀpinꢀ(MODE)ꢀdefinesꢀtheꢀorderꢀofꢀtheꢀburstꢀ  
sequence.WhentiedHIGH,theinterleavedburstsequenceꢀ  
isꢀselected.ꢀWhenꢀtiedꢀLOW,ꢀtheꢀlinearꢀburstꢀsequenceꢀisꢀ  
selected.  
FAST ACCESS TIME  
Symbol  
Parameter  
6.5  
7.5  
Units  
ns  
tk q ꢀ  
tk c ꢀ  
ClockꢀAccessꢀTimeꢀ  
CycleꢀTimeꢀ  
6.5ꢀ  
7.5ꢀ  
133ꢀ  
7.5ꢀ  
8.5ꢀ  
117ꢀ  
ns  
Frequencyꢀ  
MHz  
Copyright © 2005 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no  
liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on  
any published information and before placing orders for products.  
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774  
1
Rev. B  
06/09/08  

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