是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Obsolete | 零件包装代码: | BGA |
包装说明: | BGA, | 针数: | 48 |
Reach Compliance Code: | not_compliant | ECCN代码: | 3A991.B.2.A |
HTS代码: | 8542.32.00.41 | 风险等级: | 5.88 |
最长访问时间: | 12 ns | JESD-30 代码: | R-PBGA-B48 |
JESD-609代码: | e0 | 内存密度: | 8388608 bit |
内存集成电路类型: | STANDARD SRAM | 内存宽度: | 16 |
功能数量: | 1 | 端子数量: | 48 |
字数: | 524288 words | 字数代码: | 512000 |
工作模式: | ASYNCHRONOUS | 最高工作温度: | 85 °C |
最低工作温度: | -40 °C | 组织: | 512KX16 |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | BGA |
封装形状: | RECTANGULAR | 封装形式: | GRID ARRAY |
并行/串行: | PARALLEL | 峰值回流温度(摄氏度): | NOT SPECIFIED |
认证状态: | Not Qualified | 最大供电电压 (Vsup): | 3.63 V |
最小供电电压 (Vsup): | 3.135 V | 标称供电电压 (Vsup): | 3.3 V |
表面贴装: | YES | 技术: | CMOS |
温度等级: | INDUSTRIAL | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | BALL | 端子位置: | BOTTOM |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IS61LV51216-12M | ISSI |
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暂无描述 | |
IS61LV51216-12T | ISSI |
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512K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY | |
IS61LV51216-12TI | ISSI |
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512K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY | |
IS61LV51216-8BI | ISSI |
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Standard SRAM, 512KX16, 8ns, CMOS, PBGA48, 10 X 12 MM, MINI, BGA-48 | |
IS61LV51216-8M | ISSI |
获取价格 |
512K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY | |
IS61LV51216-8MI | ISSI |
获取价格 |
512K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY | |
IS61LV51216-8T | ISSI |
获取价格 |
512K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY | |
IS61LV51216-8TI | ISSI |
获取价格 |
512K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY | |
IS61LV51216-8TI-TR | ISSI |
获取价格 |
暂无描述 | |
IS61LV51216-8TL | ISSI |
获取价格 |
512K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY |