Datasheet > IS61LPD25636D-200TQ

IS61LPD25636D-200TQ

更新时间： 2024-11-12 11:00:31

品牌	Logo	应用领域
美国芯成 - ISSI		静态存储器
页数	文件大小	规格书
29页	172K
描述
Cache SRAM, 256KX36, 3.1ns, CMOS, PQFP100, TQFP-100

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IS61LPD25636D-200TQ 数据手册

浏览型号IS61LPD25636D-200TQ的Datasheet PDF文件第2页

浏览型号IS61LPD25636D-200TQ的Datasheet PDF文件第3页

浏览型号IS61LPD25636D-200TQ的Datasheet PDF文件第4页

浏览型号IS61LPD25636D-200TQ的Datasheet PDF文件第5页

浏览型号IS61LPD25636D-200TQ的Datasheet PDF文件第6页

浏览型号IS61LPD25636D-200TQ的Datasheet PDF文件第7页

IS61LPD25632T/D/J

IS61LPD25636T/D/J

IS61LPD51218T/D/J

ISSI

256K x 32, 256K x 36, 512K x 18

SYNCHRONOUS PIPELINED,

APRIL 2003

DOUBLE-CYCLE DESELECT STATIC RAM

DESCRIPTION

FEATURES

The ISSI IS61LPD25632T/D/J,IS61LPD25636T/D/J,and

IS61LPD51218T/D/Jare high-speed, low-power synchro-

nous static RAMs designed to provide burstable, high-

performance memory for communication and networking

applications. The IS61LPD25632T/D/J is organized as

262,144 words by 32 bits and the IS61LPD25636T/D/J is

organizedas262,144wordsby36bits.TheIS61LPD51218T/

D/J is organized as 524,288 words by 18 bits. Fabricated

with ISSI's advanced CMOS technology, the device inte-

grates a 2-bit burst counter, high-speed SRAM core, and

high-drivecapabilityoutputsintoasinglemonolithiccircuit.

Allsynchronousinputspassthroughregisterscontrolledby

a positive-edge-triggered single clock input.

• Internal self-timed write cycle

• Individual Byte Write Control and Global Write

• Clock controlled, registered address, data and

control

• Linear burst sequence control using MODE

input

•

Three chip enable option for simple depth

expansion and address pipelining

• Common data inputs and data outputs

• JEDEC 100-Pin TQFP and

119-pin PBGA package

Writecyclesareinternallyself-timedandareinitiatedbythe

risingedgeoftheclockinput.Writecyclescanbeonetofour

bytes wide as controlled by the write control inputs.

• Power Supply

+3.3V V^DD

Separate byte enables allow individual bytes to be written.

Bytewriteoperationisperformedbyusingbytewriteenable

(BWE). Input combined with one or more individual byte

write signals (BWx). In addition, Global Write (GW) is

available for writing all bytes at one time, regardless of the

byte write controls.

+3.3V or 2.5 VDDQ (I/O)

• Auto Power-down during deselect

• Double cycle deselect

• Snooze MODE for reduced-power standby

• JTAG Boundary Scan for PBGA package

• T Version (three chips selects)

• D Version (two chips selects)

• J Version (PBGA Package with JTAG)

Bursts can be initiated with either ADSP (Address Status

Processor) or ADSC (Address Status Cache Controller)

input pins. Subsequent burst addresses can be generated

internally and controlled by the ADV (burst address ad-

vance) input pin.

The mode pin is used to select the burst sequence order.

Linear burst is achieved when this pin is tied LOW. Inter-

leave burst is achieved when this pin is tied HIGH or left

floating.

FAST ACCESS TIME

Symbol

tKQ

Parameter

-250

2.6

-225

2.8

-200

3.1

-166

3.5

Units

Clock Access Time

Cycle Time

tKC

4.4

Frequency

250

225

200

166

MHz

without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to

obtain the latest version of this device specification before relying on any published information and before placing orders for products.

Integrated Silicon Solution, Inc. — 1-800-379-4774

Rev. A

04/01/03

12 3 4 5 6 7...29

中文翻译

下载PDF

与IS61LPD25636D-200TQ相关器件

型号	品牌	获取价格	描述	数据表
IS61LPD25636D-250TQ	ISSI	获取价格	Cache SRAM, 256KX36, 2.6ns, CMOS, PQFP100, TQFP-100
IS61LPD25636J-166B	ISSI	获取价格	Cache SRAM, 256KX36, 3.5ns, CMOS, PBGA119, PLASTIC, BGA-119
IS61LPD25636J-166BI	ISSI	获取价格	Cache SRAM, 256KX36, 3.5ns, CMOS, PBGA119, PLASTIC, BGA-119
IS61LPD25636J-200B	ISSI	获取价格	Cache SRAM, 256KX36, 3.1ns, CMOS, PBGA119, PLASTIC, BGA-119
IS61LPD25636J-200BI	ISSI	获取价格	Cache SRAM, 256KX36, 3.1ns, CMOS, PBGA119, PLASTIC, BGA-119
IS61LPD25636J-225B	ISSI	获取价格	Cache SRAM, 256KX36, 2.8ns, CMOS, PBGA119, PLASTIC, BGA-119
IS61LPD25636J-225BI	ISSI	获取价格	Cache SRAM, 256KX36, 2.8ns, CMOS, PBGA119, PLASTIC, BGA-119
IS61LPD25636T/D	ISSI	获取价格	256K x 32, 256K x 36, 512K x 18 SYNCHRONOUS PIPELINE, DOUBLE-CYCLE DESELECT STATIC RAM
IS61LPD25636T-166TQI	ISSI	获取价格	Cache SRAM, 256KX36, 3.5ns, CMOS, PQFP100, TQFP-100
IS61LPD25636T-200TQ	ISSI	获取价格	Cache SRAM, 256KX36, 3.1ns, CMOS, PQFP100, TQFP-100

与IS61LPD25636D-200TQ相关文章

国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

23
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

7
AMD宣布全球裁员约1000人，调整战略聚焦增长
2024-11-14

8
英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

31

产品中心

服务支持

精选活动

关于我们

帮助中心

IS61LPD25636D-200TQ

IS61LPD25636D-200TQ 数据手册

与IS61LPD25636D-200TQ相关器件

与IS61LPD25636D-200TQ相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

IS61LPD25636D-200TQ

IS61LPD25636D-200TQ 数据手册

与IS61LPD25636D-200TQ相关器件

与IS61LPD25636D-200TQ相关文章

您还可以找

您在本页遇到什么问题？