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IS61LF102418B-6.5TQLI-TR

更新时间： 2024-11-24 22:58:15
品牌 Logo 应用领域
美国芯成 - ISSI 静态存储器内存集成电路
页数 文件大小 规格书
35页 2026K
描述
IC SRAM 18M PARALLEL 133MHZ

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IS61LF102418B-6.5TQLI-TR 技术参数

是否Rohs认证： 符合生命周期：Active
包装说明：LQFP,Reach Compliance Code：compliant
Factory Lead Time：10 weeks风险等级：5.72
最长访问时间：6.5 ns其他特性：FLOW-THROUGH
JESD-30 代码：R-PQFP-G100长度：20 mm
内存密度：18874368 bit内存集成电路类型：STANDARD SRAM
内存宽度：18功能数量：1
端子数量：100字数：1048576 words
字数代码：1000000工作模式：SYNCHRONOUS
最高工作温度：85 °C最低工作温度：-40 °C
组织：1MX18封装主体材料：PLASTIC/EPOXY
封装代码：LQFP封装形状：RECTANGULAR
封装形式：FLATPACK, LOW PROFILE并行/串行：PARALLEL
峰值回流温度（摄氏度）：NOT SPECIFIED座面最大高度：1.6 mm
最大供电电压 (Vsup)：3.465 V最小供电电压 (Vsup)：3.135 V
标称供电电压 (Vsup)：3.3 V表面贴装：YES
技术：CMOS温度等级：INDUSTRIAL
端子形式：GULL WING端子节距：0.65 mm
端子位置：QUAD处于峰值回流温度下的最长时间：NOT SPECIFIED
宽度：14 mmBase Number Matches：1

IS61LF102418B-6.5TQLI-TR 数据手册

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IS61LF51236(32)B/IS61VF51236(32)B/IS61VVF51236(32)B  
IS61LF102418B/IS61VF102436B/IS61VVF102418B  
512K x36 and 1024K x18 18Mb,  
SYNCHRONOUS FLOW-THROUGH SRAM  
OCTOBER 2015  
FEATURES  
DESCRIPTION  
•
•
•
Internal self-timed write cycle  
The 18Mb product family features high-speed, low-  
power synchronous static RAMs designed to provide  
burstable, high-performance memory for  
Individual Byte Write Control and Global Write  
Clock controlled, registered address, data and  
control  
Burst sequence control using MODE input  
Three chip enable option for simple depth  
expansion and address pipelining  
Common data inputs and data outputs  
Auto Power-down during deselect  
Single cycle deselect  
communication and networking applications. The  
IS61(64)LF/VF/VVF51236(32)B organized as 524,288  
words by 36(32)bits. The IS61(64)LF/VF/VVF102418B  
are organized as 1,048,576 words by 18 bits.  
Fabricated with ISSI's advanced CMOS technology,  
the device integrates a 2-bit burst counter, high-speed  
SRAM core, and high-drive capability outputs into a  
single monolithic circuit. All synchronous inputs pass  
through registers controlled by a positive-edge-  
triggered single clock input.  
•
•
•
•
•
•
•
Snooze MODE for reduced-power standby  
JEDEC 100-pin QFP, 165-ball BGA and 119-ball  
BGA packages  
•
Power supply:  
LF: VDD 3.3V (± 5%), VDDQ 3.3V/2.5V (± 5%)  
VF: VDD 2.5V (± 5%), VDDQ 2.5V (± 5%)  
VVF: VDD 1.8V (± 5%), VDDQ 1.8V (± 5%)  
JTAG Boundary Scan for BGA packages  
Commercial, Industrial and Automotive  
temperature support  
Write cycles are internally self-timed and are initiated  
by the rising edge of the clock input. Write cycles can  
be one to four bytes wide as controlled by the write  
control inputs.  
•
•
Separate byte enables allow individual bytes to be  
written. The byte write operation is performed by using  
the byte write enable (/BWE) input combined with one  
or more individual byte write signals (/BWx). In  
•
•
Lead-free available  
For leaded options, please contact ISSI  
addition, Global Write (/GW) is available for writing all  
bytes at one time, regardless of the byte write controls.  
FAST ACCESS TIME  
Symbol  
Parameter  
-6.5  
-7.5  
Units  
Bursts can be initiated with either /ADSP (Address  
Status Processor) or /ADSC (Address Status Cache  
Controller) input pins. Subsequent burst addresses can  
be generated internally and controlled by the /ADV  
(burst address advance) input pin.  
Clock Access  
Time  
tKQ  
6.5  
7.5  
ns  
tKC  
Cycle time  
Frequency  
7.5  
8.5  
ns  
133  
117  
MHz  
The mode pin is used to select the burst sequence  
order. Linear burst is achieved when this pin is tied  
LOW. Interleave burst is achieved when this pin is tied  
HIGH or left floating  
Copyright © 2015 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no  
liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on  
any published information and before placing orders for products.  
Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can reasonably be expected to cause  
failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such applications unless Integrated Silicon Solution, Inc. receives written  
assurance to its satisfaction, that:  
a.) the risk of injury or damage has been minimized;  
b.) the user assume all such risks; and  
c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances  
Integrated Silicon Solution, Inc.- www.issi.com  
Rev. C  
1
09/12/2015  
1234567...35

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