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IS61C632A-5PQ PDF预览

IS61C632A-5PQ

更新时间: 2024-11-20 04:44:47
品牌 Logo 应用领域
矽成 - ICSI /
页数 文件大小 规格书
16页 486K
描述
32K x 32 SYNCHRONOUS PIPELINED STATIC RAM

IS61C632A-5PQ 技术参数

是否Rohs认证: 不符合生命周期:Transferred
包装说明:QFP, QFP100,.7X.9Reach Compliance Code:unknown
风险等级:5.88最长访问时间:5 ns
I/O 类型:COMMONJESD-30 代码:R-PQFP-G100
JESD-609代码:e0内存密度:1048576 bit
内存集成电路类型:STANDARD SRAM内存宽度:32
端子数量:100字数:32768 words
字数代码:32000工作模式:SYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:32KX32输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:QFP
封装等效代码:QFP100,.7X.9封装形状:RECTANGULAR
封装形式:FLATPACK并行/串行:PARALLEL
电源:3.3 V认证状态:Not Qualified
最大待机电流:0.01 A最小待机电流:3.14 V
子类别:SRAMs最大压摆率:0.17 mA
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子节距:0.635 mm端子位置:QUAD
Base Number Matches:1

IS61C632A-5PQ 数据手册

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IS61C632A  
32K x 32 SYNCHRONOUS PIPELINED STATIC RAM  
FEATURES  
DESCRIPTION  
The ICSI IS61C632A is a high-speed, low-power synchro-  
nous static RAM designed to provide a burstable, high-perfor-  
mance, secondary cache for the i486™, Pentium™, 680X0™,  
and PowerPC™ microprocessors. It is organized as 32,768  
words by 32 bits, fabricated with ICSI's advanced CMOS  
technology. The device integrates a 2-bit burst counter, high-  
speed SRAM core, and high-drive capability outputs into a  
single monolithic circuit. All synchronous inputs pass through  
registers controlled by a positive-edge-triggered single clock  
input.  
• Fast access time:  
– 4 ns-125 MHZ; 5 ns-100 MHz;  
6 ns-83 MHz; 7 ns-75 MHz; 8 ns-66 MHz  
• Internal self-timed write cycle  
• Individual Byte Write Control and Global Write  
• Clock controlled, registered address, data and  
control  
• Pentium™ or linear burst sequence control  
using MODE input  
• Three chip enables for simple depth expansion  
and address pipelining  
• Common data inputs and data outputs  
• Power-down control by ZZ input  
• JEDEC 100-Pin LQFP and PQFP package  
• Single +3.3V power supply  
Write cycles are internally self-timed and are initiated by the  
rising edge of the clock input. Write cycles can be from one to  
four bytes wide as controlled by the write control inputs.  
Separate byte enables allow individual bytes to be written.  
BW1 controls DQ1-DQ8, BW2 controls DQ9-DQ16, BW3  
controls DQ17-DQ24, BW4 controls DQ25-DQ32, conditioned  
by BWE being LOW. A LOW on GW input would cause all bytes  
to be written.  
• Two Clock enables and one Clock disable to  
eliminate multiple bank bus contention.  
Bursts can be initiated with either ADSP (Address Status  
Processor) or ADSC (Address Status Cache Controller) input  
pins. Subsequent burst addresses can be generated internally  
by the IS61C632A and controlled by the ADV (burst address  
advance) input pin.  
• Control pins mode upon power-up:  
– MODE in interleave burst mode  
– ZZ in normal operation mode  
These control pins can be connected to GNDQ  
or VCCQ to alter their power-up state  
Asynchronous signals include output enable (OE), sleep mode  
input (ZZ), clock (CLK) and burst mode input (MODE). A HIGH  
input on the ZZ pin puts the SRAM in the power-down state.  
When ZZ is pulled LOW (or no connect), the SRAM normally  
operates after three cycles of the wake-up period. A LOW  
input, i.e., GNDQ, on MODE pin selects LINEAR Burst. A VCCQ  
(or no connect) on MODE pin selects INTERLEAVED Burst.  
ICSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors  
which may appear in this publication. © Copyright 2000, Integrated Circuit Solution Inc.  
Integrated Circuit Solution Inc.  
1
SSR001-0B  

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