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IS61C632A-6TQ PDF预览

IS61C632A-6TQ

更新时间: 2024-11-20 04:44:47
品牌 Logo 应用领域
矽成 - ICSI 存储内存集成电路静态存储器
页数 文件大小 规格书
16页 486K
描述
32K x 32 SYNCHRONOUS PIPELINED STATIC RAM

IS61C632A-6TQ 技术参数

是否Rohs认证: 不符合生命周期:Transferred
包装说明:QFP, QFP100,.63X.87Reach Compliance Code:unknown
风险等级:5.88Is Samacsys:N
最长访问时间:6 nsI/O 类型:COMMON
JESD-30 代码:R-PQFP-G100JESD-609代码:e0
内存密度:1048576 bit内存集成电路类型:STANDARD SRAM
内存宽度:32端子数量:100
字数:32768 words字数代码:32000
工作模式:SYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:32KX32
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:QFP封装等效代码:QFP100,.63X.87
封装形状:RECTANGULAR封装形式:FLATPACK
并行/串行:PARALLEL电源:3.3 V
认证状态:Not Qualified最大待机电流:0.01 A
最小待机电流:3.14 V子类别:SRAMs
最大压摆率:0.16 mA标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子节距:0.635 mm
端子位置:QUADBase Number Matches:1

IS61C632A-6TQ 数据手册

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IS61C632A  
32K x 32 SYNCHRONOUS PIPELINED STATIC RAM  
FEATURES  
DESCRIPTION  
The ICSI IS61C632A is a high-speed, low-power synchro-  
nous static RAM designed to provide a burstable, high-perfor-  
mance, secondary cache for the i486™, Pentium™, 680X0™,  
and PowerPC™ microprocessors. It is organized as 32,768  
words by 32 bits, fabricated with ICSI's advanced CMOS  
technology. The device integrates a 2-bit burst counter, high-  
speed SRAM core, and high-drive capability outputs into a  
single monolithic circuit. All synchronous inputs pass through  
registers controlled by a positive-edge-triggered single clock  
input.  
• Fast access time:  
– 4 ns-125 MHZ; 5 ns-100 MHz;  
6 ns-83 MHz; 7 ns-75 MHz; 8 ns-66 MHz  
• Internal self-timed write cycle  
• Individual Byte Write Control and Global Write  
• Clock controlled, registered address, data and  
control  
• Pentium™ or linear burst sequence control  
using MODE input  
• Three chip enables for simple depth expansion  
and address pipelining  
• Common data inputs and data outputs  
• Power-down control by ZZ input  
• JEDEC 100-Pin LQFP and PQFP package  
• Single +3.3V power supply  
Write cycles are internally self-timed and are initiated by the  
rising edge of the clock input. Write cycles can be from one to  
four bytes wide as controlled by the write control inputs.  
Separate byte enables allow individual bytes to be written.  
BW1 controls DQ1-DQ8, BW2 controls DQ9-DQ16, BW3  
controls DQ17-DQ24, BW4 controls DQ25-DQ32, conditioned  
by BWE being LOW. A LOW on GW input would cause all bytes  
to be written.  
• Two Clock enables and one Clock disable to  
eliminate multiple bank bus contention.  
Bursts can be initiated with either ADSP (Address Status  
Processor) or ADSC (Address Status Cache Controller) input  
pins. Subsequent burst addresses can be generated internally  
by the IS61C632A and controlled by the ADV (burst address  
advance) input pin.  
• Control pins mode upon power-up:  
– MODE in interleave burst mode  
– ZZ in normal operation mode  
These control pins can be connected to GNDQ  
or VCCQ to alter their power-up state  
Asynchronous signals include output enable (OE), sleep mode  
input (ZZ), clock (CLK) and burst mode input (MODE). A HIGH  
input on the ZZ pin puts the SRAM in the power-down state.  
When ZZ is pulled LOW (or no connect), the SRAM normally  
operates after three cycles of the wake-up period. A LOW  
input, i.e., GNDQ, on MODE pin selects LINEAR Burst. A VCCQ  
(or no connect) on MODE pin selects INTERLEAVED Burst.  
ICSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors  
which may appear in this publication. © Copyright 2000, Integrated Circuit Solution Inc.  
Integrated Circuit Solution Inc.  
1
SSR001-0B  

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