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IS61C5128AS-25TLI PDF预览

IS61C5128AS-25TLI

更新时间: 2024-11-30 05:39:35
品牌 Logo 应用领域
美国芯成 - ISSI 存储内存集成电路静态存储器光电二极管PC
页数 文件大小 规格书
19页 286K
描述
512K x 8 HIGH-SPEED CMOS STATIC RAM

IS61C5128AS-25TLI 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active零件包装代码:TSOP2
包装说明:TSOP2, TSOP32,.46针数:44
Reach Compliance Code:compliantECCN代码:3A991.B.2.A
HTS代码:8542.32.00.41Factory Lead Time:6 weeks
风险等级:1.53Samacsys Confidence:4
Samacsys Status:ReleasedSamacsys PartID:998273
Samacsys Pin Count:32Samacsys Part Category:Integrated Circuit
Samacsys Package Category:Small Outline PackagesSamacsys Footprint Name:32L 400mil TSOP-2
Samacsys Released Date:2017-11-29 00:21:30Is Samacsys:N
最长访问时间:25 nsI/O 类型:COMMON
JESD-30 代码:R-PDSO-G44JESD-609代码:e3
长度:18.415 mm内存密度:4194304 bit
内存集成电路类型:STANDARD SRAM内存宽度:8
湿度敏感等级:3功能数量:1
端子数量:44字数:524288 words
字数代码:512000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:512KX8输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:TSOP2
封装等效代码:TSOP32,.46封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE并行/串行:PARALLEL
峰值回流温度(摄氏度):260电源:5 V
认证状态:Not Qualified座面最大高度:1.2 mm
最大待机电流:0.0009 A最小待机电流:2.9 V
子类别:SRAMs最大压摆率:0.03 mA
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:Matte Tin (Sn) - annealed端子形式:GULL WING
端子节距:0.8 mm端子位置:DUAL
处于峰值回流温度下的最长时间:40宽度:10.16 mm
Base Number Matches:1

IS61C5128AS-25TLI 数据手册

 浏览型号IS61C5128AS-25TLI的Datasheet PDF文件第2页浏览型号IS61C5128AS-25TLI的Datasheet PDF文件第3页浏览型号IS61C5128AS-25TLI的Datasheet PDF文件第4页浏览型号IS61C5128AS-25TLI的Datasheet PDF文件第5页浏览型号IS61C5128AS-25TLI的Datasheet PDF文件第6页浏览型号IS61C5128AS-25TLI的Datasheet PDF文件第7页 
IS61C5128AL/AS  
IS64C5128AL/AS  
512K x 8 HIGH-SPEED CMOS STATIC RAM  
MARCH2008  
FEATURES  
DESCRIPTION  
TheISSIIS61C5128AL/ASandIS64C5128AL/ASarehigh-  
speed, 4,194,304-bit static RAMs organized as 524,288  
words by 8 bits. They are fabricated using ISSI's high-  
performanceCMOStechnology.Thishighlyreliableprocess  
coupled with innovative circuit design techniques, yields  
access times as fast as 12 ns with low power consumption.  
HIGH SPEED: (IS61/64C5128AL)  
• High-speed access time: 10ns, 12 ns  
• Low Active Power: 150 mW (typical)  
• Low Standby Power: 10 mW (typical)  
CMOS standby  
LOW POWER: (IS61/64C5128AS)  
• High-speed access time: 25ns  
• Low Active Power: 75 mW (typical)  
When CE is HIGH (deselected), the device assumes a  
standbymodeatwhichthepowerdissipationcanbereduced  
down with CMOS input levels.  
• Low Standby Power: 1 mW (typical)  
CMOS standby  
Easy memory expansion is provided by using Chip Enable  
andOutputEnableinputs,CEandOE.TheactiveLOWWrite  
Enable(WE)controlsbothwritingandreadingofthememory.  
A data byte allows Upper Byte (UB) and Lower Byte (LB)  
access.  
• TTL compatible interface levels  
• Single 5V 10ꢀ power supply  
• Fully static operation: no clock or refresh  
required  
TheIS61C5128AL/ASandIS64C5128AL/ASarepackaged  
intheJEDECstandard36-pinSOJ(400-mil),32-pinsTSOP-  
I,32-pinSOP,44-pinTSOP-IIand32-pinTSOP-IIpackages  
• Available in 36-pin SOJ (400-mil), 32-pin  
sTSOP-I, 32-pin SOP, 44-pin TSOP-II and 32-  
pin TSOP-II packages  
• Commercial, Industrial and Automotive tempera-  
ture ranges available  
• Lead-free available  
FUNCTIONAL BLOCK DIAGRAM  
512K X 8  
MEMORY ARRAY  
A0-A18  
DECODER  
VDD  
GND  
I/O  
DATA  
COLUMN I/O  
I/O0-I/O7  
CIRCUIT  
CE  
CONTROL  
CIRCUIT  
OE  
WE  
Copyright © 2006 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability  
arisingoutoftheapplicationoruseofanyinformation, productsorservicesdescribedherein. Customersareadvisedtoobtainthelatestversionofthisdevicespecificationbeforerelyingonany  
publishedinformationandbeforeplacingordersforproducts.  
Integrated Silicon Solution, Inc. — www.issi.com  
1
Rev. B  
03/04/2008  

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