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IS61C3216AL-12TLI PDF预览

IS61C3216AL-12TLI

更新时间: 2024-11-29 04:44:47
品牌 Logo 应用领域
美国芯成 - ISSI 存储内存集成电路静态存储器光电二极管
页数 文件大小 规格书
16页 86K
描述
32K x 16 HIGH-SPEED CMOS STATIC RAM

IS61C3216AL-12TLI 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:TSOP2
包装说明:TSOP2, TSOP44,.46,32针数:44
Reach Compliance Code:compliantECCN代码:3A991
Factory Lead Time:6 weeks风险等级:5.61
最长访问时间:12 nsI/O 类型:COMMON
JESD-30 代码:R-PDSO-G44JESD-609代码:e3
长度:18.415 mm内存密度:524288 bit
内存集成电路类型:STANDARD SRAM内存宽度:16
湿度敏感等级:3功能数量:1
端子数量:44字数:32768 words
字数代码:32000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:32KX16输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:TSOP2
封装等效代码:TSOP44,.46,32封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE并行/串行:PARALLEL
峰值回流温度(摄氏度):260电源:5 V
认证状态:Not Qualified座面最大高度:1.2 mm
最大待机电流:0.0004 A最小待机电流:4.5 V
子类别:SRAMs最大压摆率:0.055 mA
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:Matte Tin (Sn) - annealed端子形式:GULL WING
端子节距:0.8 mm端子位置:DUAL
处于峰值回流温度下的最长时间:40宽度:10.16 mm
Base Number Matches:1

IS61C3216AL-12TLI 数据手册

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®
IS61C3216AL  
ISSI  
SEPTEMBER 2005  
32K x 16 HIGH-SPEED CMOS STATIC RAM  
DESCRIPTION  
FEATURES  
The ISSI IS61C3216AL is high-speed, 512Kb static RAMs  
organized as 32,768 words by 16 bits. They are fabricated  
usingISSI'shigh-performanceCMOStechnology.Thishighly  
reliable process coupled with innovative circuit design tech-  
niques, yields access times as fast as 12 ns with low power  
consumption.  
• High-speed access time: 12 ns  
• Low Active Power: 175 mW (typical)  
• Low Standby Power: 1 mW (typical)  
CMOS standby  
• TTL compatible interface levels  
• Single 5V ± 10% power supply  
When CE is HIGH (deselected), the device assumes a  
standbymodeatwhichthepowerdissipationcanbereduced  
down with CMOS input levels.  
• Fully static operation: no clock or refresh  
required  
• Available in 44-pin SOJ package and  
44-pin TSOP (Type II)  
Easy memory expansion is provided by using Chip Enable  
andOutputEnableinputs,CEandOE.TheactiveLOWWrite  
Enable(WE)controlsbothwritingandreadingofthememory.  
A data byte allows Upper Byte (UB) and Lower Byte (LB)  
access.  
• Commercial and Industrial temperature ranges  
available  
• Lead-free available  
The IS61C3216AL is packaged in the JEDEC standard 44-  
pin 400-mil SOJ and 44-pin TSOP (Type II).  
FUNCTIONAL BLOCK DIAGRAM  
32K x 16  
MEMORY ARRAY  
A0-A14  
DECODER  
VDD  
GND  
I/O0-I/O7  
Lower Byte  
I/O  
DATA  
COLUMN I/O  
CIRCUIT  
I/O8-I/O15  
Upper Byte  
CE  
OE  
WE  
CONTROL  
CIRCUIT  
UB  
LB  
Copyright © 2005 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability  
arisingoutoftheapplicationoruseofanyinformation, productsorservicesdescribedherein. Customersareadvisedtoobtainthelatestversionofthisdevicespecificationbeforerelyingonany  
publishedinformationandbeforeplacingordersforproducts.  
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774  
Rev. A  
1
09/26/05