Datasheet > IS46TR81280A-125JBLA2

IS46TR81280A-125JBLA2

更新时间： 2024-10-28 14:51:39

品牌	Logo	应用领域
美国芯成 - ISSI		时钟动态存储器双倍数据速率内存集成电路
页数	文件大小	规格书
79页	3238K
描述
DDR DRAM, 128MX8, 12.5ns, CMOS, PBGA78, 8 X 10.50 MM, 0.80 MM PITCH, LEAD FREE, FBGA-78

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IS46TR81280A-125JBLA2 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
零件包装代码：	BGA	包装说明：	TFBGA, BGA78,9X13,32
针数：	78	Reach Compliance Code：	compliant
ECCN代码：	EAR99	HTS代码：	8542.32.00.32
风险等级：	5.84	访问模式：	MULTI BANK PAGE BURST
最长访问时间：	12.5 ns	其他特性：	AUTO SELF REFRESH MODE, ALSO OPERATES AT 1.35 V NOMINAL SUPPLY
最大时钟频率 (fCLK)：	800 MHz	I/O 类型：	COMMON
交错的突发长度：	4,8	JESD-30 代码：	R-PBGA-B78
长度：	10.5 mm	内存密度：	1073741824 bit
内存集成电路类型：	DDR DRAM	内存宽度：	8
功能数量：	1	端口数量：	1
端子数量：	78	字数：	134217728 words
字数代码：	128000000	工作模式：	SYNCHRONOUS
最高工作温度：	105 °C	最低工作温度：	-40 °C
组织：	128MX8	输出特性：	3-STATE
封装主体材料：	PLASTIC/EPOXY	封装代码：	TFBGA
封装等效代码：	BGA78,9X13,32	封装形状：	RECTANGULAR
封装形式：	GRID ARRAY, THIN PROFILE, FINE PITCH	电源：	1.5 V
认证状态：	Not Qualified	刷新周期：	8192
筛选级别：	AEC-Q100	座面最大高度：	1.2 mm
自我刷新：	YES	连续突发长度：	4,8
子类别：	DRAMs	最大压摆率：	0.227 mA
最大供电电压 (Vsup)：	1.575 V	最小供电电压 (Vsup)：	1.425 V
标称供电电压 (Vsup)：	1.5 V	表面贴装：	YES
技术：	CMOS	温度等级：	INDUSTRIAL
端子形式：	BALL	端子节距：	0.8 mm
端子位置：	BOTTOM	宽度：	8 mm
Base Number Matches：	1

IS46TR81280A-125JBLA2 数据手册

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IS43/46TR16640A, IS43/46TR16640AL

IS43/46TR81280A , IS43/46TR81280AL

128MX8, 64MX16 1Gb DDR3 SDRAM

ADVANCED INFORMATION

DECEMBER 2012

FEATURES

•

Standard Voltage: V_DDand V_DDQ= 1.5V ± 0.075V

Low Voltage (L): V_DDand V_DDQ= 1.35V + 0.1V, -0.067V

•

Refresh Interval:

7.8 us (8192 cycles/64 ms) Tc= -40°C to 85°C

3.9 us (8192 cycles/32 ms) Tc= 85°C to 105°C

•

High speed data transfer rates with system

frequency up to 933 MHz

•

Partial Array Self Refresh

•

8 internal banks for concurrent operation

8n-bit pre-fetch architecture

Asynchronous RESET pin

TDQS (Termination Data Strobe) supported (x8

only)

Programmable CAS Latency

Programmable Additive Latency: 0, CL-1,CL-2

•

OCD (Off-Chip Driver Impedance Adjustment)

Dynamic ODT (On-Die Termination)

Driver strength : RZQ/7, RZQ/6 (RZQ = 240 Ω )

Write Leveling

Programmable CAS WRITE latency (CWL) based

on tCK

•

Programmable Burst Length: 4 and 8

Programmable Burst Sequence: Sequential or

Interleave

Operating temperature:

Commercial (T_C= 0°C to +95°C)

Industrial (T_C= -40°C to +95°C)

Automotive, A1 (T_C= -40°C to +95°C)

Automotive, A2 (T_C= -40°C to +105°C)

•

BL switch on the fly

Auto Self Refresh(ASR)

Self Refresh Temperature(SRT)

OPTIONS

ADDRESS TABLE

Parameter

•

Configuration:

128Mx8

64Mx16

128Mx8

A0-A13

A0-A9

64Mx16

A0-A12

A0-A9

Row Addressing

Column Addressing

Bank Addressing

Page size

Package:

96-ball FBGA (9mm x 13mm) for x16

78-ball FBGA (8mm x 10.5mm) for x8

BA0-2

1KB

2KB

Auto Precharge Addressing

BL switch on the fly

A10/AP

A12/BC#

A10/AP

A12/BC#

SPEED BIN

Speed Option

187F

15G

15H

125J

107L

Units

DDR3-

1066F

7-7-7

DDR3-

1333G

8-8-8

DDR3-

1333H

9-9-9

DDR3-

1600J

10-10-10

12.5

DDR3-

1866L

12-12-12

12.84

JEDEC Speed Grade

CL-nRCD-nRP

tRCD,tRP(min)

tCK

13.125

12.0

13.5

Note: Faster speed options are backward compatible to slower speed options.

without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised

to obtain the latest version of this device specification before relying on any published information and before placing orders for products.

Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product

can reasonably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use

in such applications unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that:

a.) the risk of injury or damage has been minimized;

b.) the user assume all such risks; and

c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances

Integrated Silicon Solution, Inc. – www.issi.com –

Rev. 00B

12/5/2012

12 3 4 5 6 7...79

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与IS46TR81280A-125JBLA2相关器件

型号	品牌	获取价格	描述	数据表
IS46TR81280A-125KBLA1	ISSI	获取价格	DDR DRAM, 128MX8, 13.75ns, CMOS, PBGA78, 8 X 10.50 MM, 0.80 MM PITCH, LEAD FREE, FBGA-78
IS46TR81280A-125KBLA2	ISSI	获取价格	DDR DRAM, 128MX8, 13.75ns, CMOS, PBGA78, 8 X 10.50 MM, 0.80 MM PITCH, LEAD FREE, FBGA-78
IS46TR81280A-187FBLA1	ISSI	获取价格	DDR DRAM, 128MX8, 13.125ns, CMOS, PBGA78, 8 X 10.50 MM, 0.80 MM PITCH, LEAD FREE, FBGA-78
IS46TR81280B	ISSI	获取价格	Programmable CAS Latency
IS46TR81280BL	ISSI	获取价格	Programmable CAS Latency
IS46TR81280ED-125KBLA2	ISSI	获取价格	128MX8, 64MX16 1Gb DDR3 SDRAM WITH ECC
IS46TR81280ED-125KBLA3	ISSI	获取价格	128MX8, 64MX16 1Gb DDR3 SDRAM WITH ECC
IS46TR81280ED-15HBLA2	ISSI	获取价格	128MX8, 64MX16 1Gb DDR3 SDRAM WITH ECC
IS46TR81280ED-15HBLA3	ISSI	获取价格	128MX8, 64MX16 1Gb DDR3 SDRAM WITH ECC
IS46TR82560A-125KBLA1	ISSI	获取价格	256Mx8, 128Mx16 2Gb DDR3 SDRAM

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