Datasheet > IS46TR16256A-107MBLA1

IS46TR16256A-107MBLA1

更新时间： 2024-11-20 00:53:51

品牌	Logo	应用领域
美国芯成 - ISSI		动态存储器双倍数据速率
页数	文件大小	规格书
88页	3941K
描述
512Mx8, 256Mx16 4Gb DDR3 SDRAM

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IS43/46TR16256A, IS43/46TR16256AL,

IS43/46TR85120A, IS43/46TR85120AL

512Mx8, 256Mx16 4Gb DDR3 SDRAM

SEPTEMBER 2016

FEATURES



Standard Voltage: V_DDand V_DDQ= 1.5V ± 0.075V



Refresh Interval:

7.8 us (8192 cycles/64 ms) Tc= -40°C to 85°C

3.9 us (8192 cycles/32 ms) Tc= 85°C to 105°C

Low Voltage (L): V_DDand V_DDQ= 1.35V + 0.1V, -0.067V

- Backward compatible to 1.5V



Partial Array Self Refresh



High speed data transfer rates with system

frequency up to 1066 MHz

Asynchronous RESET pin



8 internal banks for concurrent operation

8n-Bit pre-fetch architecture

TDQS (Termination Data Strobe) supported (x8

only)



OCD (Off-Chip Driver Impedance Adjustment)

Dynamic ODT (On-Die Termination)

Driver strength : RZQ/7, RZQ/6 (RZQ = 240 Ω)

Write Leveling

Programmable CAS Latency

Programmable Additive Latency: 0, CL-1,CL-2

Programmable CAS WRITE latency (CWL) based

on tCK



Programmable Burst Length: 4 and 8

Up to 200 MHz in DLL off mode

Operating temperature:

Programmable Burst Sequence: Sequential or

Interleave

Commercial (T_C= 0°C to +95°C)

Industrial (T_C= -40°C to +95°C)

Automotive, A1 (T_C= -40°C to +95°C)

Automotive, A2 (T_C= -40°C to +105°C)



BL switch on the fly

Auto Self Refresh(ASR)

Self Refresh Temperature(SRT)

OPTIONS

ADDRESS TABLE

Parameter



Configuration:

512Mx8

A0-A15

A0-A9

BA0-2

1KB

256Mx16

A0-A14

A0-A9

BA0-2

2KB

512Mx8

256Mx16

Package:

96-ball BGA (9mm x 13mm) for x16

78-ball BGA (9mm x 10.5mm) for x8

Row Addressing

Column Addressing

Bank Addressing



Page size

Auto Precharge

Addressing

A10/AP

BL switch on the fly

A12/BC#

SPEED BIN

Speed Option

15H

125K

107M

093N

Units

JEDEC Speed Grade

DDR3-1333H

DDR3-1600K

DDR3-1866M

DDR3-2133N

CL-nRCD-nRP

tRCD,tRP(min)

9-9-9

13.5

11-11-11

13.75

13-13-13

13.91

14-14-14

13.09

tCK

Note:Faster speed options are backward compatible to slower speed options.

without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised

to obtain the latest version of this device specification before relying on any published information and before placing orders for products.

Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product

can reasonably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use

in such applications unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that:

a.) the risk of injury or damage has been minimized;

b.) the user assume all such risks; and

c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances

Integrated Silicon Solution, Inc. – www.issi.com –

Rev. G2

07/28/2016

12 3 4 5 6 7...88

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与IS46TR16256A-107MBLA1相关器件

型号	品牌	获取价格	描述	数据表
IS46TR16256A-107MBLA2	ISSI	获取价格	512Mx8, 256Mx16 4Gb DDR3 SDRAM
IS46TR16256A-125KBLA1	ISSI	获取价格	DDR DRAM, 256MX16, 0.1ns, CMOS, PBGA96, FBGA-96
IS46TR16256A-125KBLA1-TR	ISSI	获取价格	IC DRAM 4G PARALLEL 96TWBGA
IS46TR16256A-125KBLA2	ISSI	获取价格	IC DRAM 4G PARALLEL 96TWBGA
IS46TR16256A-15HBLA1	ISSI	获取价格	IC DRAM 4G PARALLEL 96TWBGA
IS46TR16256A-15HBLA1-TR	ISSI	获取价格	IC DRAM 4G PARALLEL 96TWBGA
IS46TR16256A-15HBLA2	ISSI	获取价格	IC DRAM 4G PARALLEL 96TWBGA
IS46TR16256A-15HBLA2-TR	ISSI	获取价格	IC DRAM 4G PARALLEL 96TWBGA
IS46TR16256AL-107MBLA1	ISSI	获取价格	512Mx8, 256Mx16 4Gb DDR3 SDRAM
IS46TR16256AL-107MBLA2	ISSI	获取价格	512Mx8, 256Mx16 4Gb DDR3 SDRAM

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