Datasheet > IS43TR16256A-125KBL

IS43TR16256A-125KBL

更新时间： 2024-10-28 20:59:39

品牌	Logo	应用领域
美国芯成 - ISSI		动态存储器双倍数据速率内存集成电路
页数	文件大小	规格书
88页	2897K
描述
DDR DRAM, 256MX16, 0.1ns, CMOS, PBGA96, FBGA-96

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IS43TR16256A-125KBL 技术参数

是否Rohs认证：	符合	生命周期：	End Of Life
包装说明：	TFBGA,	Reach Compliance Code：	compliant
ECCN代码：	EAR99	Factory Lead Time：	6 weeks
风险等级：	1.57	访问模式：	MULTI BANK PAGE BURST
最长访问时间：	0.1 ns	其他特性：	PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH
JESD-30 代码：	R-PBGA-B96	长度：	13 mm
内存密度：	4294967296 bit	内存集成电路类型：	DDR DRAM
内存宽度：	16	功能数量：	1
端口数量：	1	端子数量：	96
字数：	268435456 words	字数代码：	256000000
工作模式：	SYNCHRONOUS	最高工作温度：	85 °C
最低工作温度：		组织：	256MX16
封装主体材料：	PLASTIC/EPOXY	封装代码：	TFBGA
封装形状：	RECTANGULAR	封装形式：	GRID ARRAY, THIN PROFILE, FINE PITCH
座面最大高度：	1.2 mm	自我刷新：	YES
最大供电电压 (Vsup)：	1.575 V	最小供电电压 (Vsup)：	1.425 V
标称供电电压 (Vsup)：	1.5 V	表面贴装：	YES
技术：	CMOS	温度等级：	OTHER
端子形式：	BALL	端子节距：	0.8 mm
端子位置：	BOTTOM	宽度：	9 mm
Base Number Matches：	1

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IS43/46TR16256A, IS43/46TR16256AL,

IS43/46TR85120A, IS43/46TR85120AL

512Mx8, 256Mx16 4Gb DDR3 SDRAM

JUNE 2014

FEATURES



Standard Voltage: V_DDand V_DDQ= 1.5V ± 0.075V



Refresh Interval:

Low Voltage (L): V_DDand V_DDQ= 1.35V + 0.1V, -0.067V

Backward compatible to 1.5V

7.8 us (8192 cycles/64 ms) Tc= -40°C to 85°C

3.9 us (8192 cycles/32 ms) Tc= 85°C to 105°C



High speed data transfer rates with system

frequency up to 1066 MHz



Partial Array Self Refresh



8 internal banks for concurrent operation

8n-Bit pre-fetch architecture

Asynchronous RESET pin

TDQS (Termination Data Strobe) supported (x8

only)

Programmable CAS Latency



OCD (Off-Chip Driver Impedance Adjustment)

Dynamic ODT (On-Die Termination)

Driver strength : RZQ/7, RZQ/6 (RZQ = 240 Ω)

Write Leveling

Programmable Additive Latency: 0, CL-1,CL-2

Programmable CAS WRITE latency (CWL) based

on tCK



Programmable Burst Length: 4 and 8

Programmable Burst Sequence: Sequential or

Interleave

Operating temperature:

Commercial (T_C= 0°C to +95°C)

Industrial (T_C= -40°C to +95°C)

Automotive, A1 (T_C= -40°C to +95°C)

Automotive, A2 (T_C= -40°C to +105°C)



BL switch on the fly

Auto Self Refresh(ASR)

Self Refresh Temperature(SRT)

OPTIONS

ADDRESS TABLE

Parameter



Configuration:

512Mx8

A0-A15

A0-A9

BA0-2

1KB

256Mx16

A0-A14

A0-A9

BA0-2

2KB

512Mx8

256Mx16

Row Addressing

Column Addressing

Bank Addressing



Package:

96-ball FBGA (9mm x 13mm) for x16

78-ball FBGA (9mm x 10.5mm) for x8

Page size

Auto Precharge

Addressing

A10/AP

BL switch on the fly

A12/BC#

SPEED BIN

Speed Option

15H

125K

107M

093N

Units

JEDEC Speed Grade

DDR3-1333H

DDR3-1600K

DDR3-1866M

DDR3-2133M

CL-nRCD-nRP

tRCD,tRP(min)

9-9-9

13.5

11-11-11

13.75

13-13-13

13.91

14-14-14

13.09

tCK

Note:Faster speed options are backward compatible to slower speed options.

without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised

to obtain the latest version of this device specification before relying on any published information and before placing orders for products.

Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product

can reasonably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use

in such applications unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that:

a.) the risk of injury or damage has been minimized;

b.) the user assume all such risks; and

c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances

Integrated Silicon Solution, Inc. – www.issi.com –

Rev. A

06/10/2014

12 3 4 5 6 7...88

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与IS43TR16256A-125KBL相关器件

型号	品牌	获取价格	描述	数据表
IS43TR16256A-125KBLI	ISSI	获取价格	DDR DRAM, 256MX16, 0.1ns, CMOS, PBGA96, FBGA-96
IS43TR16256A-125KBLI-TR	ISSI	获取价格	IC DRAM 4G PARALLEL 96TWBGA
IS43TR16256A-125KBL-TR	ISSI	获取价格	IC DRAM 4G PARALLEL 96TWBGA
IS43TR16256A-15HBL	ISSI	获取价格	DDR DRAM, 256MX16, 0.125ns, CMOS, PBGA96, FBGA-96
IS43TR16256A-15HBLI	ISSI	获取价格	IC DRAM 4G PARALLEL 96TWBGA
IS43TR16256A-15HBL-TR	ISSI	获取价格	IC DRAM 4G PARALLEL 96TWBGA
IS43TR16256AL-107MBL	ISSI	获取价格	IC DRAM 4G PARALLEL 96TWBGA
IS43TR16256AL-107MBLI	ISSI	获取价格	IC DRAM 4G PARALLEL 96TWBGA
IS43TR16256AL-107MBLI-TR	ISSI	获取价格	IC DRAM 4G PARALLEL 96TWBGA
IS43TR16256AL-107MBL-TR	ISSI	获取价格	IC DRAM 4G PARALLEL 96TWBGA

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