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IS43R83200F-6TLI PDF预览

IS43R83200F-6TLI

更新时间: 2024-10-27 19:24:23
品牌 Logo 应用领域
美国芯成 - ISSI 动态存储器双倍数据速率光电二极管内存集成电路
页数 文件大小 规格书
32页 1298K
描述
DDR DRAM, 32MX8, 0.7ns, CMOS, PDSO66, 0.400 INCH, LEAD FREE, TSOP2-66

IS43R83200F-6TLI 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:TSOP2,Reach Compliance Code:compliant
Factory Lead Time:8 weeks风险等级:2.22
访问模式:FOUR BANK PAGE BURST最长访问时间:0.7 ns
其他特性:AUTO/SELF REFRESHJESD-30 代码:R-PDSO-G66
长度:22.22 mm内存密度:268435456 bit
内存集成电路类型:DDR DRAM内存宽度:8
功能数量:1端口数量:1
端子数量:66字数:33554432 words
字数代码:32000000工作模式:SYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:32MX8封装主体材料:PLASTIC/EPOXY
封装代码:TSOP2封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE峰值回流温度(摄氏度):NOT SPECIFIED
座面最大高度:1.2 mm自我刷新:YES
最大供电电压 (Vsup):2.7 V最小供电电压 (Vsup):2.3 V
标称供电电压 (Vsup):2.5 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子形式:GULL WING端子节距:0.65 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:10.16 mmBase Number Matches:1

IS43R83200F-6TLI 数据手册

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IS43/46R83200F  
IS43/46R16160F  
IS43/46R32800F  
8Mx32, 16Mx16, 32Mx8  
256Mb DDR SDRAM  
FEATURES  
OCTOBER 2016  
DEVICE OVERVIEW  
ISSI’sꢀ256-MbitꢀDDRꢀSDRAMꢀachievesꢀhighꢀspeedꢀdataꢀ  
transfer using pipeline architecture and two data word  
accessesꢀperꢀclockꢀcycle.ꢀTheꢀ268,435,456-bitꢀmemoryꢀ  
arrayꢀisꢀinternallyꢀorganizedꢀasꢀfourꢀbanksꢀofꢀ64Mbꢀtoꢀ  
allowꢀconcurrentꢀoperations.ꢀTheꢀpipelineꢀallowsꢀReadꢀ  
and Write burst accesses to be virtually continuous, with  
theꢀoptionꢀtoꢀconcatenateꢀorꢀtruncateꢀtheꢀbursts.ꢀTheꢀ  
programmable features of burst length, burst sequence  
andꢀCASꢀlatencyꢀenableꢀfurtherꢀadvantages.ꢀTheꢀdeviceꢀ  
isꢀavailableꢀinꢀ8-bit,ꢀ16-bitꢀandꢀ32-bitꢀdataꢀwordꢀsizeꢀ  
InputꢀdataꢀisꢀregisteredꢀonꢀtheꢀI/Oꢀpinsꢀonꢀbothꢀedgesꢀ  
ofꢀDataꢀStrobeꢀsignal(s),ꢀwhileꢀoutputꢀdataꢀisꢀreferencedꢀ  
toꢀbothꢀedgesꢀofꢀDataꢀStrobeꢀandꢀbothꢀedgesꢀofꢀCLK.ꢀ  
CommandsꢀareꢀregisteredꢀonꢀtheꢀpositiveꢀedgesꢀofꢀCLK.ꢀ  
•ꢀ VDDꢀandꢀVDDQ:ꢀ2.5Vꢀ±ꢀ0.2Vꢀ  
•ꢀ SSTL_2ꢀcompatibleꢀI/O  
•ꢀ Double-dataꢀrateꢀarchitecture;ꢀtwoꢀdataꢀtransfersꢀ  
per clock cycle  
•ꢀ Bidirectional,ꢀdataꢀstrobeꢀ(DQS)ꢀisꢀtransmitted/  
received with data, to be used in capturing data  
at the receiver  
•ꢀ DQSꢀisꢀedge-alignedꢀwithꢀdataꢀforꢀREADsꢀandꢀ  
centre-alignedꢀwithꢀdataꢀforꢀWRITEs  
•ꢀ Differentialꢀclockꢀinputsꢀ(CKꢀandꢀCK)  
•ꢀ DLLꢀalignsꢀDQꢀandꢀDQSꢀtransitionsꢀwithꢀCKꢀ  
transitions  
AnꢀAutoꢀRefreshꢀmodeꢀisꢀprovided,ꢀalongꢀwithꢀaꢀSelfꢀ  
Refreshꢀmode.ꢀAllꢀI/OsꢀareꢀSSTL_2ꢀcompatible.  
•ꢀ CommandsꢀenteredꢀonꢀeachꢀpositiveꢀCKꢀedge;ꢀdataꢀ  
andꢀdataꢀmaskꢀreferencedꢀtoꢀbothꢀedgesꢀofꢀDQS  
•ꢀ Fourꢀinternalꢀbanksꢀforꢀconcurrentꢀoperation  
ADDRESS TABLE  
Parameter  
8M x 32  
16M x 16  
32M x 8  
•ꢀ DataꢀMaskꢀforꢀwriteꢀdata.ꢀDMꢀmasksꢀwriteꢀdataꢀ  
at both rising and falling edges of data strobe  
Configuration 2Mꢀxꢀ32ꢀxꢀ4ꢀ  
4Mꢀxꢀ16ꢀxꢀ4ꢀ  
8Mꢀxꢀ8ꢀxꢀ4ꢀ  
•ꢀ BurstꢀLength:ꢀ2,ꢀ4ꢀandꢀ8  
banks  
banks  
banks  
•ꢀ BurstꢀType:ꢀSequentialꢀandꢀInterleaveꢀmode  
•ꢀ ProgrammableꢀCASꢀlatency:ꢀ2,ꢀ2.5ꢀandꢀ3ꢀ  
•ꢀ AutoꢀRefreshꢀandꢀSelfꢀRefreshꢀModes  
•ꢀ AutoꢀPrecharge  
BankꢀAddressꢀ BA0,ꢀBA1  
Pins  
BA0,ꢀBA1  
BA0,ꢀBA1  
Autoprecharge A8/AP  
Pins  
A10/AP  
A10/AP  
RowꢀAddress 4K(A0ꢀ–ꢀA11) 8K(A0ꢀ–ꢀA12) 8K(A0ꢀ–ꢀA12)  
•ꢀ TRASꢀLockoutꢀsupportedꢀ(tRAP = tRCD)  
Column  
Address  
512(A0ꢀ–ꢀA7,ꢀ 512(A0ꢀ–ꢀA8) 1K(A0ꢀ–ꢀA9)  
A9)  
OPTIONS  
RefreshꢀCount  
Com./Ind./A1 4Kꢀ/ꢀ64ms  
A2 4Kꢀ/ꢀ16ms  
•ꢀ Configuration(s):ꢀ8Mx32,ꢀ16Mx16,ꢀ32Mx8  
8Kꢀ/ꢀ64ms  
8Kꢀ/ꢀ16ms  
8Kꢀ/ꢀ64ms  
•ꢀ Package(s):ꢀ  
ꢀ 144ꢀBallꢀBGAꢀ(x32)  
66-pinꢀTSOP-IIꢀ(x8,ꢀx16)ꢀandꢀ60ꢀBallꢀBGAꢀ(x8,ꢀx16)  
•ꢀ Lead-freeꢀpackageꢀavailable  
•ꢀ TemperatureꢀRange:ꢀ  
KEY TIMING PARAMETERS  
Speed Grade  
-5  
-6  
Units  
ꢀ Commercialꢀ(0°Cꢀtoꢀ+70°C)  
FCkꢀMaxꢀCLꢀ=ꢀ3ꢀ  
FCkꢀMaxꢀCLꢀ=ꢀ2.5ꢀ  
FCkꢀMaxꢀCLꢀ=ꢀ2ꢀ  
200ꢀ  
167ꢀ  
133ꢀ  
167ꢀ  
167ꢀ  
133ꢀ  
ꢀ MHz  
ꢀ MHz  
ꢀ MHz  
ꢀ Industrialꢀ(-40°Cꢀtoꢀ+85°C)  
Automotive,ꢀA1ꢀ(-40°Cꢀtoꢀ+85°C)  
Automotive,ꢀA2ꢀ(-40°Cꢀtoꢀ+105°C)  
Copyright © 2016 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without  
notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest  
version of this device specification before relying on any published information and before placing orders for products.  
Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can reason-  
ably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such applications  
unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that:  
a.) the risk of injury or damage has been minimized;  
b.) the user assume all such risks; and  
c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances  
Integrated Silicon Solution, Inc.  
1
Rev. B  
10/18/2016  

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