IS43R83200D
IS43/46R16160D, IS43/46R32800D
8Mx32,ꢀ16Mx16,ꢀ32Mx8ꢀ
256MbꢀDDRꢀSDRAM
ADVANCEDꢀINFORMATION
ꢀ
NOVEMBERꢀ2011
FEATURES
DEVICEꢀOVERVIEW
•ꢀ VDDꢀandꢀVDDQ:ꢀ2.5Vꢀ ꢀ0.2Vꢀ(-5,ꢀ-6)
•ꢀ VDDꢀandꢀVDDQ:ꢀ2.5Vꢀ ꢀ0.1Vꢀ(-4)
•ꢀ SSTL_2ꢀcompatibleꢀI/O
•ꢀ Double-dataꢀrateꢀarchitecture;ꢀtwoꢀdataꢀtransfersꢀ
perꢀclockꢀcycle
•ꢀ Bidirectional,ꢀdataꢀstrobeꢀ(DQS)ꢀisꢀtransmitted/
receivedꢀwithꢀdata,ꢀtoꢀbeꢀusedꢀinꢀcapturingꢀdataꢀ
atꢀtheꢀreceiver
•ꢀ DQSꢀisꢀedge-alignedꢀwithꢀdataꢀforꢀREADsꢀandꢀ
centre-alignedꢀwithꢀdataꢀforꢀWRITEs
ISSI’sꢀ256-MbitꢀDDRꢀSDRAMꢀachievesꢀhighꢀspeedꢀdataꢀ
transferꢀusingꢀpipelineꢀarchitectureꢀandꢀtwoꢀdataꢀwordꢀ
accessesꢀperꢀclockꢀcycle.ꢀTheꢀ268,435,456-bitꢀmemoryꢀ
arrayꢀisꢀinternallyꢀorganizedꢀasꢀfourꢀbanksꢀofꢀ64Mbꢀtoꢀ
allowꢀconcurrentꢀoperations.ꢀTheꢀpipelineꢀallowsꢀReadꢀ
andꢀWriteꢀburstꢀaccessesꢀtoꢀbeꢀvirtuallyꢀcontinuous,ꢀwithꢀ
theꢀoptionꢀtoꢀconcatenateꢀorꢀtruncateꢀtheꢀbursts.ꢀTheꢀ
programmableꢀfeaturesꢀofꢀburstꢀlength,ꢀburstꢀsequenceꢀ
andꢀCASꢀlatencyꢀenableꢀfurtherꢀadvantages.ꢀTheꢀdeviceꢀ
isꢀavailableꢀinꢀ8-bit,ꢀ16-bitꢀandꢀ32-bitꢀdataꢀwordꢀsizeꢀ
InputꢀdataꢀisꢀregisteredꢀonꢀtheꢀI/Oꢀpinsꢀonꢀbothꢀedgesꢀ
ofꢀDataꢀStrobeꢀsignal(s),ꢀwhileꢀoutputꢀdataꢀisꢀreferencedꢀ
toꢀbothꢀedgesꢀofꢀDataꢀStrobeꢀandꢀbothꢀedgesꢀofꢀCLK.ꢀ
CommandsꢀareꢀregisteredꢀonꢀtheꢀpositiveꢀedgesꢀofꢀCLK.ꢀ
•ꢀ Differentialꢀclockꢀinputsꢀ(CKꢀandꢀCK)
•ꢀ DLLꢀalignsꢀDQꢀandꢀDQSꢀtransitionsꢀwithꢀCKꢀ
transitions
•ꢀ CommandsꢀenteredꢀonꢀeachꢀpositiveꢀCKꢀedge;ꢀdataꢀ
andꢀdataꢀmaskꢀreferencedꢀtoꢀbothꢀedgesꢀofꢀDQS
AnꢀAutoꢀRefreshꢀmodeꢀisꢀprovided,ꢀalongꢀwithꢀaꢀSelfꢀ
Refreshꢀmode.ꢀAllꢀI/OsꢀareꢀSSTL_2ꢀcompatible.
•ꢀ Fourꢀinternalꢀbanksꢀforꢀconcurrentꢀoperation
•ꢀ DataꢀMaskꢀforꢀwriteꢀdata.ꢀDMꢀmasksꢀwriteꢀdataꢀ
atꢀbothꢀrisingꢀandꢀfallingꢀedgesꢀofꢀdataꢀstrobe
ADDRESSꢀTABLE
Parameter
8Mꢀxꢀ32
16Mꢀxꢀ16
32Mꢀxꢀ8
•ꢀ BurstꢀLength:ꢀ2,ꢀ4ꢀandꢀ8
Configuration 2Mꢀxꢀ32ꢀxꢀ4ꢀ
banks
4Mꢀxꢀ16ꢀxꢀ4ꢀꢀ 8Mꢀxꢀ8ꢀxꢀ4ꢀꢀ
banks
banks
•ꢀ BurstꢀType:ꢀSequentialꢀandꢀInterleaveꢀmode
•ꢀ ProgrammableꢀCASꢀlatency:ꢀ2,ꢀ2.5ꢀandꢀ3ꢀ
•ꢀ AutoꢀRefreshꢀandꢀSelfꢀRefreshꢀModes
•ꢀ AutoꢀPrecharge
BankꢀAddressꢀ BA0,ꢀBA1
Pins
BA0,ꢀBA1
BA0,ꢀBA1
Autoprechargeꢀ A8/AP
Pins
A10/AP
A10/AP
RowꢀAddress 4K(A0ꢀ–ꢀA11) 8K(A0ꢀ–ꢀA12) 8K(A0ꢀ–ꢀA12)
OPTIONS
Columnꢀ
Address
512(A0ꢀ–ꢀA7,ꢀ 512(A0ꢀ–ꢀA8) 1K(A0ꢀ–ꢀA9)
A9)
•ꢀ Dieꢀrevision:ꢀD
•ꢀ Configuration(s):ꢀ8Mx32,ꢀ16Mx16,ꢀ32Mx8
•ꢀ Package(s):ꢀ
ꢀ 144ꢀBallꢀBGAꢀ(x32)
RefreshꢀCountꢀ
ꢀ
ꢀ
ꢀ
Com./Ind./A1ꢀ 4Kꢀ/ꢀ64msꢀ
A2 4Kꢀ/ꢀ16ms
8Kꢀ/ꢀ64msꢀ
8Kꢀ/ꢀ16ms
8Kꢀ/ꢀ64ms
ꢀ
66-pinꢀTSOP-IIꢀ(x8,ꢀx16)ꢀandꢀ60ꢀBallꢀBGAꢀ(x8,ꢀx16)
•ꢀ Lead-freeꢀpackageꢀavailable
•ꢀ TemperatureꢀRange:ꢀ
ꢀ Commercialꢀ(0°Cꢀtoꢀ+70°C)
ꢀ Industrialꢀ(-40°Cꢀtoꢀ+85°C)ꢀ
Automotive,ꢀA1ꢀ(-40°Cꢀtoꢀ+85°C)ꢀ
Automotive,ꢀA2ꢀ(-40°Cꢀtoꢀ+105°C)
KEYꢀTIMINGꢀPARAMETERS
SpeedꢀGradeꢀ
ꢀ
-4ꢀ
-5ꢀ
ꢀ
-6ꢀ
ꢀ
ꢀ
ꢀ
Unitsꢀ
x8,ꢀx16ꢀonlyꢀ
ꢀ
FckꢀMaxꢀCLꢀ=ꢀ3ꢀ
FckꢀMaxꢀCLꢀ=ꢀ2.5ꢀ
FckꢀMaxꢀCLꢀ=ꢀ2ꢀ
250ꢀ
—ꢀ
200ꢀ
200ꢀ
133ꢀ
167ꢀ ꢀ MHz
167ꢀ ꢀ MHz
133ꢀ ꢀ MHz
—ꢀ
Copyrightꢀ©ꢀ2011ꢀIntegratedꢀSiliconꢀSolution,ꢀInc.ꢀꢀAllꢀrightsꢀreserved.ꢀꢀISSIꢀreservesꢀtheꢀrightꢀtoꢀmakeꢀchangesꢀtoꢀthisꢀspecificationꢀandꢀitsꢀproductsꢀatꢀanyꢀtimeꢀwithoutꢀ
notice.ꢀꢀꢀISSIꢀassumesꢀnoꢀliabilityꢀarisingꢀoutꢀofꢀtheꢀapplicationꢀorꢀuseꢀofꢀanyꢀinformation,ꢀproductsꢀorꢀservicesꢀdescribedꢀherein.ꢀCustomersꢀareꢀadvisedꢀtoꢀobtainꢀtheꢀlat-
estꢀversionꢀofꢀthisꢀdeviceꢀspecificationꢀbeforeꢀrelyingꢀonꢀanyꢀpublishedꢀinformationꢀandꢀbeforeꢀplacingꢀordersꢀforꢀproducts.ꢀꢀ
IntegratedꢀSiliconꢀSolution,ꢀInc.ꢀdoesꢀnotꢀrecommendꢀtheꢀuseꢀofꢀanyꢀofꢀitsꢀproductsꢀinꢀlifeꢀsupportꢀapplicationsꢀwhereꢀtheꢀfailureꢀorꢀmalfunctionꢀofꢀtheꢀproductꢀcanꢀreason-
ablyꢀbeꢀexpectedꢀtoꢀcauseꢀfailureꢀofꢀtheꢀlifeꢀsupportꢀsystemꢀorꢀtoꢀsignificantlyꢀaffectꢀitsꢀsafetyꢀorꢀeffectiveness.ꢀProductsꢀareꢀnotꢀauthorizedꢀforꢀuseꢀinꢀsuchꢀapplicationsꢀ
unlessꢀIntegratedꢀSiliconꢀSolution,ꢀInc.ꢀreceivesꢀwrittenꢀassuranceꢀtoꢀitsꢀsatisfaction,ꢀthat:
a.)ꢀtheꢀriskꢀofꢀinjuryꢀorꢀdamageꢀhasꢀbeenꢀminimized;
b.)ꢀtheꢀuserꢀassumeꢀallꢀsuchꢀrisks;ꢀand
c.)ꢀpotentialꢀliabilityꢀofꢀIntegratedꢀSiliconꢀSolution,ꢀIncꢀisꢀadequatelyꢀprotectedꢀunderꢀtheꢀcircumstances
Integrated Silicon Solution, Inc. ꢀ
1
Rev.ꢀ 00D
11/01/2011
5秒后页面跳转
解析光耦仿真器：升级光耦合器技术的必要性
英伟达新一代Blackwell GPU过热问题致交付延迟
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
微信公众号
抖音公众号
浙公网安备 33010502006866号 浙ICP备10014259号-119
营业执照ICP证
数据手册
如果您发现信息不准确，
