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IS43R83200D-4BL PDF预览

IS43R83200D-4BL

更新时间: 2024-10-28 07:35:27
品牌 Logo 应用领域
美国芯成 - ISSI 动态存储器双倍数据速率
页数 文件大小 规格书
34页 994K
描述
DDR DRAM, 32MX8, 0.7ns, CMOS, PBGA60, 8 X 13 MM , 1.20 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, TFBGA-60

IS43R83200D-4BL 数据手册

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IS43R83200D  
IS43/46R16160D, IS43/46R32800D  
8Mx32,ꢀ16Mx16,ꢀ32Mx8ꢀ  
256MbꢀDDRꢀSDRAM  
ADVANCEDꢀINFORMATION  
DECEMBERꢀ2011  
FEATURES  
DEVICEꢀOVERVIEW  
•ꢀ VDDꢀandꢀVDDQ:ꢀ2.5Vꢀ ꢀ0.2Vꢀ(-5,ꢀ-6)  
•ꢀ VDDꢀandꢀVDDQ:ꢀ2.5Vꢀ ꢀ0.1Vꢀ(-4)  
•ꢀ SSTL_2ꢀcompatibleꢀI/O  
•ꢀ Double-dataꢀrateꢀarchitecture;ꢀtwoꢀdataꢀtransfersꢀ  
perꢀclockꢀcycle  
•ꢀ Bidirectional,ꢀdataꢀstrobeꢀ(DQS)ꢀisꢀtransmitted/  
receivedꢀwithꢀdata,ꢀtoꢀbeꢀusedꢀinꢀcapturingꢀdataꢀ  
atꢀtheꢀreceiver  
•ꢀ DQSꢀisꢀedge-alignedꢀwithꢀdataꢀforꢀREADsꢀandꢀ  
centre-alignedꢀwithꢀdataꢀforꢀWRITEs  
ISSI’sꢀ256-MbitꢀDDRꢀSDRAMꢀachievesꢀhighꢀspeedꢀdataꢀ  
transferꢀusingꢀpipelineꢀarchitectureꢀandꢀtwoꢀdataꢀwordꢀ  
accessesꢀperꢀclockꢀcycle.ꢀTheꢀ268,435,456-bitꢀmemoryꢀ  
arrayꢀisꢀinternallyꢀorganizedꢀasꢀfourꢀbanksꢀofꢀ64Mbꢀtoꢀ  
allowꢀconcurrentꢀoperations.ꢀTheꢀpipelineꢀallowsꢀReadꢀ  
andꢀWriteꢀburstꢀaccessesꢀtoꢀbeꢀvirtuallyꢀcontinuous,ꢀwithꢀ  
theꢀoptionꢀtoꢀconcatenateꢀorꢀtruncateꢀtheꢀbursts.ꢀTheꢀ  
programmableꢀfeaturesꢀofꢀburstꢀlength,ꢀburstꢀsequenceꢀ  
andꢀCASꢀlatencyꢀenableꢀfurtherꢀadvantages.ꢀTheꢀdeviceꢀ  
isꢀavailableꢀinꢀ8-bit,ꢀ16-bitꢀandꢀ32-bitꢀdataꢀwordꢀsizeꢀ  
InputꢀdataꢀisꢀregisteredꢀonꢀtheꢀI/Oꢀpinsꢀonꢀbothꢀedgesꢀ  
ofꢀDataꢀStrobeꢀsignal(s),ꢀwhileꢀoutputꢀdataꢀisꢀreferencedꢀ  
toꢀbothꢀedgesꢀofꢀDataꢀStrobeꢀandꢀbothꢀedgesꢀofꢀCLK.ꢀ  
CommandsꢀareꢀregisteredꢀonꢀtheꢀpositiveꢀedgesꢀofꢀCLK.ꢀ  
•ꢀ Differentialꢀclockꢀinputsꢀ(CKꢀandꢀCK)  
•ꢀ DLLꢀalignsꢀDQꢀandꢀDQSꢀtransitionsꢀwithꢀCKꢀ  
transitions  
•ꢀ CommandsꢀenteredꢀonꢀeachꢀpositiveꢀCKꢀedge;ꢀdataꢀ  
andꢀdataꢀmaskꢀreferencedꢀtoꢀbothꢀedgesꢀofꢀDQS  
AnꢀAutoꢀRefreshꢀmodeꢀisꢀprovided,ꢀalongꢀwithꢀaꢀSelfꢀ  
Refreshꢀmode.ꢀAllꢀI/OsꢀareꢀSSTL_2ꢀcompatible.  
•ꢀ Fourꢀinternalꢀbanksꢀforꢀconcurrentꢀoperation  
•ꢀ DataꢀMaskꢀforꢀwriteꢀdata.ꢀDMꢀmasksꢀwriteꢀdataꢀ  
atꢀbothꢀrisingꢀandꢀfallingꢀedgesꢀofꢀdataꢀstrobe  
ADDRESSTABLE  
Parameter  
8Mꢀxꢀ32  
16Mꢀxꢀ16  
32Mꢀxꢀ8  
•ꢀ BurstꢀLength:ꢀ2,ꢀ4ꢀandꢀ8  
Configuration 2Mꢀxꢀ32ꢀxꢀ4ꢀ  
banks  
4Mꢀxꢀ16ꢀxꢀ4ꢀꢀ 8Mꢀxꢀ8ꢀxꢀ4ꢀꢀ  
banks  
banks  
•ꢀ BurstꢀType:ꢀSequentialꢀandꢀInterleaveꢀmode  
•ꢀ ProgrammableꢀCASꢀlatency:ꢀ2,ꢀ2.5ꢀandꢀ3ꢀ  
•ꢀ AutoꢀRefreshꢀandꢀSelfꢀRefreshꢀModes  
•ꢀ AutoꢀPrecharge  
BankꢀAddressꢀ BA0,ꢀBA1  
Pins  
BA0,ꢀBA1  
BA0,ꢀBA1  
Autoprechargeꢀ A8/AP  
Pins  
A10/AP  
A10/AP  
RowꢀAddress 4K(A0ꢀ–ꢀA11) 8K(A0ꢀ–ꢀA12) 8K(A0ꢀ–ꢀA12)  
OPTIONS  
Columnꢀ  
Address  
512(A0ꢀ–ꢀA7,ꢀ 512(A0ꢀ–ꢀA8) 1K(A0ꢀ–ꢀA9)  
A9)  
•ꢀ Dieꢀrevision:ꢀD  
•ꢀ Configuration(s):ꢀ8Mx32,ꢀ16Mx16,ꢀ32Mx8  
•ꢀ Package(s):ꢀ  
ꢀ 144ꢀBallꢀBGAꢀ(x32)  
RefreshꢀCountꢀ  
Com./Ind./A1ꢀ 4Kꢀ/ꢀ64msꢀ  
A2 4Kꢀ/ꢀ16ms  
8Kꢀ/ꢀ64msꢀ  
8Kꢀ/ꢀ16ms  
8Kꢀ/ꢀ64ms  
66-pinꢀTSOP-IIꢀ(x8,ꢀx16)ꢀandꢀ60ꢀBallꢀBGAꢀ(x8,ꢀx16)  
•ꢀ Lead-freeꢀpackageꢀavailable  
•ꢀ TemperatureꢀRange:ꢀ  
ꢀ Commercialꢀ(0°Cꢀtoꢀ+70°C)  
ꢀ Industrialꢀ(-40°Cꢀtoꢀ+85°C)ꢀ  
Automotive,ꢀA1ꢀ(-40°Cꢀtoꢀ+85°C)ꢀ  
Automotive,ꢀA2ꢀ(-40°Cꢀtoꢀ+105°C)  
KEYTIMINGꢀPARAMETERS  
SpeedꢀGradeꢀ  
-4ꢀ  
-5ꢀ  
-6ꢀ  
Unitsꢀ  
x8,ꢀx16ꢀonlyꢀ  
FckꢀMaxꢀCLꢀ=ꢀ3ꢀ  
FckꢀMaxꢀCLꢀ=ꢀ2.5ꢀ  
FckꢀMaxꢀCLꢀ=ꢀ2ꢀ  
250ꢀ  
—ꢀ  
200ꢀ  
200ꢀ  
133ꢀ  
167ꢀ ꢀ MHz  
167ꢀ ꢀ MHz  
133ꢀ ꢀ MHz  
—ꢀ  
Copyrightꢀ©ꢀ2011ꢀIntegratedꢀSiliconꢀSolution,ꢀInc.ꢀꢀAllꢀrightsꢀreserved.ꢀꢀISSIꢀreservesꢀtheꢀrightꢀtoꢀmakeꢀchangesꢀtoꢀthisꢀspecificationꢀandꢀitsꢀproductsꢀatꢀanyꢀtimeꢀwithoutꢀ  
notice.ꢀꢀꢀISSIꢀassumesꢀnoꢀliabilityꢀarisingꢀoutꢀofꢀtheꢀapplicationꢀorꢀuseꢀofꢀanyꢀinformation,ꢀproductsꢀorꢀservicesꢀdescribedꢀherein.ꢀCustomersꢀareꢀadvisedꢀtoꢀobtainꢀtheꢀlat-  
estꢀversionꢀofꢀthisꢀdeviceꢀspecificationꢀbeforeꢀrelyingꢀonꢀanyꢀpublishedꢀinformationꢀandꢀbeforeꢀplacingꢀordersꢀforꢀproducts.ꢀꢀ  
IntegratedꢀSiliconꢀSolution,ꢀInc.ꢀdoesꢀnotꢀrecommendꢀtheꢀuseꢀofꢀanyꢀofꢀitsꢀproductsꢀinꢀlifeꢀsupportꢀapplicationsꢀwhereꢀtheꢀfailureꢀorꢀmalfunctionꢀofꢀtheꢀproductꢀcanꢀreason-  
ablyꢀbeꢀexpectedꢀtoꢀcauseꢀfailureꢀofꢀtheꢀlifeꢀsupportꢀsystemꢀorꢀtoꢀsignificantlyꢀaffectꢀitsꢀsafetyꢀorꢀeffectiveness.ꢀProductsꢀareꢀnotꢀauthorizedꢀforꢀuseꢀinꢀsuchꢀapplicationsꢀ  
unlessꢀIntegratedꢀSiliconꢀSolution,ꢀInc.ꢀreceivesꢀwrittenꢀassuranceꢀtoꢀitsꢀsatisfaction,ꢀthat:  
a.)ꢀtheꢀriskꢀofꢀinjuryꢀorꢀdamageꢀhasꢀbeenꢀminimized;  
b.)ꢀtheꢀuserꢀassumeꢀallꢀsuchꢀrisks;ꢀand  
c.)ꢀpotentialꢀliabilityꢀofꢀIntegratedꢀSiliconꢀSolution,ꢀIncꢀisꢀadequatelyꢀprotectedꢀunderꢀtheꢀcircumstances  
Integrated Silicon Solution, Inc. ꢀ  
1
Rev.ꢀ 00E  
12/19/2011  

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