Datasheet > IS42VM32160C-75BL

IS42VM32160C-75BL

更新时间： 2024-11-14 04:22:07

品牌	Logo	应用领域
美国芯成 - ISSI		动态存储器
页数	文件大小	规格书
17页	330K
描述
Synchronous DRAM, 16MX32, 5.4ns, CMOS, PBGA90, 8 X 13 MM, 0.80 MM PITCH, LEAD FREE, MS-207, FBGA-90

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IS42VM32160C

16Mx32

Advanced Information

FEBRUARY 2009

512Mb Mobile Synchronous DRAM

FEATURES:

DESCRIPTION:

ISSI's IS42VM32160C is a 512Mb Mobile Synchronous

DRAMꢀconﬁguredꢀasꢀaꢀquadꢀ4Mꢀx32ꢀDRAM.ꢀItꢀachievesꢀ

high-speed data transfer using a pipeline architecture

with a synchronous interface. All inputs and outputs sig-

nals are registered on the rising edge of the clock input,

CLK. The 512Mb SDRAM is internally conﬁgured by

stackingꢀtwoꢀ256Mb,ꢀ16Mx16ꢀdevices.ꢀEachꢀofꢀtheꢀ4Mꢀ

x32ꢀbanksꢀisꢀorganizedꢀasꢀ8192ꢀrowsꢀbyꢀ512ꢀcolumnsꢀ

by 32 bits.

•ꢀ Fully synchronous; all signals referenced to a

positive clock edge

•ꢀ Internal bank for hiding row access and pre-

charge

•ꢀ Programmable CAS latency: 2, 3

•ꢀ Programmable Burst Length: 1, 2, 4, 8, and Full

Page

•ꢀ Programmable Burst Sequence:

•ꢀ Sequential and Interleave

•ꢀ Auto Refresh (CBR)

•ꢀ TCSR (Temperature Compensated Self Refresh)

KEY TIMING PARAMETERS

Parameter

-75

-10

Unit

•ꢀ PASR (Partial Arrays Self Refresh): 1/16, 1/8,

1/4, 1/2, and Full

•ꢀ Deep Power Down Mode (DPD)

•ꢀ Driver Strength Control (DS): 1/4, 1/2, and Full

CLK Cycle Time

CAS Latency = 3

CAS Latency = 2

CLK Frequency

CAS Latency = 3

CAS Latency = 2

Access Time from CLK

CAS Latency = 3

CAS Latency = 2

7.5

9.6

OPTIONS:

•ꢀ Conﬁguration:ꢀ16Mx32

•ꢀ PowerꢀSupply:

IS42VMxxxꢀ-ꢀV^{d d}/Vd d q = 1.8V

•ꢀ Package:ꢀ90ꢀBallꢀBGAꢀ(8mmx13mm)

•ꢀ TemperatureꢀRange:ꢀ

Commercial (0^oC to +70^oC)

Industrial (-40^oC to +85^oC)

133

104

100

Mhz

5.4

8.0

9.0

•ꢀ Dieꢀrevision:ꢀC

ADDRESS TABLE

Parameter

16Mx32

Conﬁguration

4Mꢀxꢀ32ꢀxꢀ4ꢀbanks

BA0, BA1

A10/AP

Bank Address Pins

Autoprecharge Pins

Row Addresses

Column Addresses

Refresh Count

A0 – A12

A0 – A8

8K / 64ms

notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the lat-

est version of this device speciﬁcation before relying on any published information and before placing orders for products.

Integrated Silicon Solution, Inc.

Rev. 00A

02/10/09

12 3 4 5 6 7...17

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与IS42VM32160C-75BL相关器件

型号	品牌	获取价格	描述	数据表
IS42VM32160C-75BLI	ISSI	获取价格	Synchronous DRAM, 16MX32, 5.4ns, CMOS, PBGA90, 8 X 13 MM, 0.80 MM PITCH, LEAD FREE, MS-207
IS42VM32160D-6BLI	ISSI	获取价格	Synchronous DRAM, 16MX32, 5.4ns, CMOS, PBGA90, 8 X 13 MM, LEAD FREE, MO-207, TFBGA-90
IS42VM32160D-75BLI	ISSI	获取价格	Synchronous DRAM, 16MX32, 6ns, CMOS, PBGA90, 8 X 13 MM, LEAD FREE, MO-207, TFBGA-90
IS42VM32160E-6BLA1	ISSI	获取价格	Synchronous DRAM, 16MX32, 6ns, CMOS, PBGA90, 8 X 13 MM, LEAD FREE, MO-207, TFBGA-90
IS42VM32160E-6BLA2	ISSI	获取价格	Synchronous DRAM, 16MX32, 6ns, CMOS, PBGA90, 8 X 13 MM, LEAD FREE, MO-207, TFBGA-90
IS42VM32160E-6BLI	ISSI	获取价格	Synchronous DRAM, 16MX32, 5.5ns, CMOS, PBGA90, 8 X 13 MM, LEAD FREE, MO-207, TFBGA-90
IS42VM32160E-75BLI	ISSI	获取价格	Synchronous DRAM, 16MX32, 6ns, CMOS, PBGA90, 8 X 13 MM, LEAD FREE, MO-207, TFBGA-90
IS42VM32200G	ISSI	获取价格	512K x 32Bits x 4Banks Low Power Synchronous DRAM
IS42VM32200K-6BLI	ISSI	获取价格	512K x 32Bits x 4Banks Mobile Synchronous DRAM
IS42VM32200K-75BLI	ISSI	获取价格	512K x 32Bits x 4Banks Mobile Synchronous DRAM

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