Datasheet > IS42VM32160C-10BLI

IS42VM32160C-10BLI

更新时间： 2024-11-13 15:42:39

品牌	Logo	应用领域
美国芯成 - ISSI		时钟动态存储器内存集成电路
页数	文件大小	规格书
17页	324K
描述
Synchronous DRAM, 16MX32, 8ns, CMOS, PBGA90, 13 X 8 MM, 0.80 MM PITCH, LEAD FREE, MS-207, FBGA-90

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IS42VM32160C-10BLI 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Obsolete	零件包装代码：	DSBGA
包装说明：	LFBGA, BGA90,9X15,32	针数：	90
Reach Compliance Code：	compliant	ECCN代码：	EAR99
HTS代码：	8542.32.00.28	风险等级：	5.57
Is Samacsys：	N	访问模式：	FOUR BANK PAGE BURST
最长访问时间：	8 ns	其他特性：	AUTO/SELF REFRESH
最大时钟频率 (fCLK)：	100 MHz	I/O 类型：	COMMON
交错的突发长度：	1,2,4,8	JESD-30 代码：	R-PBGA-B90
JESD-609代码：	e1	长度：	13 mm
内存密度：	536870912 bit	内存集成电路类型：	SYNCHRONOUS DRAM
内存宽度：	32	湿度敏感等级：	3
功能数量：	1	端口数量：	1
端子数量：	90	字数：	16777216 words
字数代码：	16000000	工作模式：	SYNCHRONOUS
最高工作温度：	85 °C	最低工作温度：	-40 °C
组织：	16MX32	输出特性：	3-STATE
封装主体材料：	PLASTIC/EPOXY	封装代码：	LFBGA
封装等效代码：	BGA90,9X15,32	封装形状：	RECTANGULAR
封装形式：	GRID ARRAY, LOW PROFILE, FINE PITCH	峰值回流温度（摄氏度）：	260
电源：	1.8 V	认证状态：	Not Qualified
刷新周期：	8192	座面最大高度：	1.4 mm
自我刷新：	YES	连续突发长度：	1,2,4,8,FP
最大待机电流：	0.00004 A	子类别：	DRAMs
最大压摆率：	0.22 mA	最大供电电压 (Vsup)：	1.95 V
最小供电电压 (Vsup)：	1.7 V	标称供电电压 (Vsup)：	1.8 V
表面贴装：	YES	技术：	CMOS
温度等级：	INDUSTRIAL	端子面层：	Tin/Silver/Copper (Sn/Ag/Cu)
端子形式：	BALL	端子节距：	0.8 mm
端子位置：	BOTTOM	处于峰值回流温度下的最长时间：	40
宽度：	8 mm	Base Number Matches：	1

IS42VM32160C-10BLI 数据手册

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IS42VM32160C

16Mx32

Preliminary Information

JULY 2010

512Mb Mobile Synchronous DRAM

FEATURES:

DESCRIPTION:

ISSI's IS42VM32160C is a 512Mb Mobile Synchronous

DRAM conﬁgured as a quad 4M x32 DRAM. It achieves

high-speed data transfer using a pipeline architecture

with a synchronous interface. All inputs and outputs sig-

nals are registered on the rising edge of the clock input,

CLK. The 512Mb SDRAM is internally conﬁgured by

stacking two 256Mb, 16Mx16 devices. Each of the 4M

x32ꢀbanksꢀisꢀorganizedꢀasꢀ8192ꢀrowsꢀbyꢀ512ꢀcolumnsꢀ

by 32 bits.

•ꢀ Fully synchronous; all signals referenced to a

positive clock edge

•ꢀ Internal bank for hiding row access and pre-

charge

•ꢀ Programmable CAS latency: 2, 3

•ꢀ Programmable Burst Length: 1, 2, 4, 8, and Full

Page

•ꢀ Programmable Burst Sequence:

•ꢀ Sequential and Interleave

•ꢀ Auto Refresh (CBR)

•ꢀ TCSR (Temperature Compensated Self Refresh)

KEY TIMING PARAMETERS

Parameter

-10

Unit

•ꢀ PASR (Partial Arrays Self Refresh): 1/16, 1/8,

1/4, 1/2, and Full

•ꢀ Deep Power Down Mode (DPD)

•ꢀ Driver Strength Control (DS): 1/4, 1/2, and Full

CLK Cycle Time

CAS Latency = 3

CAS Latency = 2

CLK Frequency

CAS Latency = 3

CAS Latency = 2

Access Time from CLK

CAS Latency = 3

CAS Latency = 2

OPTIONS:

•ꢀ Conﬁguration:ꢀ16Mx32

•ꢀ PowerꢀSupply:

V^{d d}/Vd d q = 1.8V

•ꢀ Package:ꢀ90ꢀBallꢀBGAꢀ(8mmx13mm)

•ꢀ TemperatureꢀRange:ꢀ

Commercial (0^oC to +70^oC)

Industrial (-40^oC to +85^oC)

100

Mhz

8.0

9.0

•ꢀ Dieꢀrevision:ꢀC

ADDRESS TABLE

Parameter

16Mx32

Conﬁguration

4M x 32 x 4 banks

BA0, BA1

A10/AP

A0 – A12

A0 – A8

Bank Address Pins

Autoprecharge Pins

Row Addresses

Column Addresses

Refresh Count

8K / 64ms

notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the lat-

est version of this device speciﬁcation before relying on any published information and before placing orders for products.

Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can reason-

ably be expected to cause failure of the life support system or to signiﬁcantly affect its safety or effectiveness. Products are not authorized for use in such applications

unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that:

a.) the risk of injury or damage has been minimized;

b.) the user assume all such risks; and

c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances

Integrated Silicon Solution, Inc.

Rev. 00B

07/21/2010

12 3 4 5 6 7...17

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与IS42VM32160C-10BLI相关器件

型号	品牌	获取价格	描述	数据表
IS42VM32160C-10BLI-TR	ISSI	获取价格	Synchronous DRAM, 16MX32, 8ns, CMOS, PBGA90,
IS42VM32160C-10BL-TR	ISSI	获取价格	Synchronous DRAM, 16MX32, 8ns, CMOS, PBGA90,
IS42VM32160C-75BI	ISSI	获取价格	Synchronous DRAM, 16MX32, 5.4ns, CMOS, PBGA90, 8 X 13 MM, 0.80 MM PITCH, MS-207, FBGA-90
IS42VM32160C-75BL	ISSI	获取价格	Synchronous DRAM, 16MX32, 5.4ns, CMOS, PBGA90, 8 X 13 MM, 0.80 MM PITCH, LEAD FREE, MS-207
IS42VM32160C-75BLI	ISSI	获取价格	Synchronous DRAM, 16MX32, 5.4ns, CMOS, PBGA90, 8 X 13 MM, 0.80 MM PITCH, LEAD FREE, MS-207
IS42VM32160D-6BLI	ISSI	获取价格	Synchronous DRAM, 16MX32, 5.4ns, CMOS, PBGA90, 8 X 13 MM, LEAD FREE, MO-207, TFBGA-90
IS42VM32160D-75BLI	ISSI	获取价格	Synchronous DRAM, 16MX32, 6ns, CMOS, PBGA90, 8 X 13 MM, LEAD FREE, MO-207, TFBGA-90
IS42VM32160E-6BLA1	ISSI	获取价格	Synchronous DRAM, 16MX32, 6ns, CMOS, PBGA90, 8 X 13 MM, LEAD FREE, MO-207, TFBGA-90
IS42VM32160E-6BLA2	ISSI	获取价格	Synchronous DRAM, 16MX32, 6ns, CMOS, PBGA90, 8 X 13 MM, LEAD FREE, MO-207, TFBGA-90
IS42VM32160E-6BLI	ISSI	获取价格	Synchronous DRAM, 16MX32, 5.5ns, CMOS, PBGA90, 8 X 13 MM, LEAD FREE, MO-207, TFBGA-90

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