Datasheet > IS42S32400F-6B

IS42S32400F-6B

更新时间： 2024-11-06 22:58:23

品牌	Logo	应用领域
美国芯成 - ISSI		动态存储器
页数	文件大小	规格书
60页	852K
描述
IC DRAM 128M PARALLEL 90TFBGA

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中文翻译

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数据手册

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IS42S32400F-6B 数据手册

IS42S32400F

IS45S32400F

4M x 32

128Mb SYNCHRONOUS DRAM

NOVEMBER 2015

OVERVIEW

FEATURES

ISSI'sꢀ128MbꢀSynchronousꢀDRAMꢀꢀachievesꢀhigh-speedꢀ

data transfer using pipeline architecture. All inputs and

outputs signals refer to the rising edge of the clock input.

Theꢀ128MbꢀSDRAMꢀisꢀorganizedꢀinꢀ1Megꢀxꢀ32ꢀbitꢀxꢀ4ꢀ

Banks.ꢀ

•ꢀ Clockꢀfrequency:ꢀ166,ꢀ143,ꢀ133ꢀMHz

•ꢀ Fullyꢀsynchronous;ꢀallꢀsignalsꢀreferencedꢀtoꢀaꢀ

positive clock edge

•ꢀ Internalꢀbankꢀforꢀhidingꢀrowꢀaccess/precharge

•ꢀ SingleꢀPowerꢀsupply:ꢀ3.3Vꢀ+ꢀ0.3V

•ꢀ LVTTLꢀinterface

KEY TIMING PARAMETERS

•ꢀ Programmableꢀburstꢀlengthꢀ

–ꢀ(1,ꢀ2,ꢀ4,ꢀ8,ꢀfullꢀpage)

Parameter

-6

-7

-75E Unit

ClkꢀCycleꢀTimeꢀ

CASꢀLatencyꢀ=ꢀ3ꢀ

CASꢀLatencyꢀ=ꢀ2ꢀ

ꢀꢀ

6ꢀ

10ꢀ

ꢀ

7ꢀ

10ꢀ

ꢀ

–ꢀ

7.5ꢀ

nsꢀ

•ꢀ Programmableꢀburstꢀsequence:ꢀ

Sequential/Interleave

ClkꢀFrequencyꢀ

CASꢀLatencyꢀ=ꢀ3ꢀ

CASꢀLatencyꢀ=ꢀ2ꢀ

ꢀꢀ

166ꢀ

100ꢀ

ꢀ

•ꢀ AutoꢀRefreshꢀ(CBR)

•ꢀ SelfꢀRefresh

143ꢀ

100ꢀ

–ꢀ

133ꢀ

Mhzꢀ

Mhz

AccessꢀTimeꢀꢀfromꢀClockꢀ

CASꢀLatencyꢀ=ꢀ3ꢀ

CASꢀLatencyꢀ=ꢀ2ꢀ

ꢀ

–ꢀ

5.5ꢀ

ꢀ

•ꢀ 4096ꢀrefreshꢀcyclesꢀeveryꢀ16msꢀ(A2ꢀgrade)ꢀorꢀ

64ꢀmsꢀ(Commercial,ꢀIndustrial,ꢀA1ꢀgrade)

5.4ꢀ

6.5ꢀ

5.4ꢀ

6.5ꢀ

nsꢀ

•ꢀ Randomꢀcolumnꢀaddressꢀeveryꢀclockꢀcycle

•ꢀ ProgrammableꢀCASꢀlatencyꢀ(2,ꢀ3ꢀclocks)

•ꢀ Burstꢀread/writeꢀandꢀburstꢀread/singleꢀwriteꢀ

ADDRESS TABLE

Parameter

operations capability

4M x 32

•ꢀ Burstꢀterminationꢀbyꢀburstꢀstopꢀandꢀprechargeꢀ

command

Conﬁguration

1Mꢀxꢀ32ꢀxꢀ4ꢀbanks

Com./Ind. 4Kꢀ/ꢀ64ms

RefreshꢀCount

OPTIONS

4Kꢀ/ꢀ64ms

4Kꢀ/ꢀ16ms

A0 – A11

A0 – A7

•ꢀ Package:ꢀ

86-pinꢀTSOP-IIꢀ

90-ballꢀTF-BGA

RowꢀAddresses

•ꢀ OperatingꢀTemperatureꢀRange:

Commercial (0^oC to +70^oC)

Column

Addresses

Industrialꢀ(-40^oC to +85^oC)

BankꢀAddressꢀ

Pins

BA0,ꢀBA1

AutomotiveꢀGrade,ꢀA1ꢀ(-40^oC to +85^oC)

AutomotiveꢀGrade,ꢀA2ꢀ(-40^oC to +105^oC)

Autoprecharge

Pins

A10/AP

out notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain

the latest version of this device speciﬁcation before relying on any published information and before placing orders for products.

Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can

reasonably be expected to cause failure of the life support system or to signiﬁcantly affect its safety or effectiveness. Products are not authorized for use in such ap-

plications unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that:

a.) the risk of injury or damage has been minimized;

b.) the user assume all such risks; and

c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances

Integrated Silicon Solution, Inc. - www.issi.com

Rev. D

10/28/2015

12 3 4 5 6 7...60

中文翻译

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与IS42S32400F-6B相关器件

型号	品牌	获取价格	描述	数据表
IS42S32400F-6BI	ISSI	获取价格	IC DRAM 128M PARALLEL 90TFBGA
IS42S32400F-6BI-TR	ISSI	获取价格	IC DRAM 128M PARALLEL 90TFBGA
IS42S32400F-6BL	ISSI	获取价格	IC DRAM 128M PARALLEL 90TFBGA
IS42S32400F-6BLI	ISSI	获取价格	IC DRAM 128M PARALLEL 90TFBGA
IS42S32400F-6BLI-TR	ISSI	获取价格	IC DRAM 128M PARALLEL 90TFBGA
IS42S32400F-6BL-TR	ISSI	获取价格	IC DRAM 128M PARALLEL 90TFBGA
IS42S32400F-6B-TR	ISSI	获取价格	IC DRAM 128M PARALLEL 90TFBGA
IS42S32400F-6TL	ISSI	获取价格	IC DRAM 128M PARALLEL 86TSOP II
IS42S32400F-6TLI	ISSI	获取价格	IC DRAM 128M PARALLEL 86TSOP II
IS42S32400F-6TLI-TR	ISSI	获取价格	IC DRAM 128M PARALLEL 86TSOP II

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