Datasheet > IS42S16800A-7BI

IS42S16800A-7BI

更新时间： 2024-11-23 22:51:39

品牌	Logo	应用领域
矽成 - ICSI		动态存储器
页数	文件大小	规格书
66页	553K
描述
16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IS42S16800A-7BI 数据手册

IS42S81600A, IS42LS81600A

IS42S16800A, IS42LS16800A

IS42S32400A, IS42LS32400A

ISSI

16Meg x 8, 8Meg x16 & 4Meg x 32

128-MBIT SYNCHRONOUS DRAM

ADVANCED INFORMATION

AUGUST 2002

OVERVIEW

FEATURES

ISSI's 128Mb Synchronous DRAM achieves high-speed

data transfer using pipeline architecture. All inputs and

outputs signals refer to the rising edge of the clock

input.The 128Mb SDARM is organized as follows.

• Clock frequency: 133 100, MHz

• Fully synchronous; all signals referenced to a

positive clock edge

• Internal bank for hiding row access/precharge

• Power supply

V^DD

VDDQ

IS42LS81600A

IS42S81600A

4M x8x4 Banks

54pin TSOPII

IS42LS16800A

IS42S16800A

IS42LS32400A

IS42S32400A

IS42LS81600A

IS42LS16800A

2.5V 1.8V (2.5V tolerant)

2M x16x4 Banks 2M x16x4 Banks

IS42LS32400A

IS42S81600A

2.5V 1.8V (2.5V tolerant)

3.3V 3.3V

54ballFBGA

90ballFBGA

86pin TSOPII

54 pin TSOPII

IS42S16800A

IS42S32400A

3.3V 3.3V

• LVTTL interface

• Programmable burst length

– (1, 2, 4, 8, full page)

KEY TIMING PARAMETERS

• Programmable burst sequence:

Sequential/Interleave

Parameter

-7

-10 Unit

Clk Cycle Time

CAS Latency = 3

CAS Latency = 2

• Extended Mode Register

• Programmable Power Reduction Feature by

partial array activation during Self-Refresh

Clk Frequency

CAS Latency = 3

CAS Latency = 2

133

100

Mhz

• Auto Refresh (CBR)

• Temp. Compensated Self Refresh.

• Self Refresh with programmable refresh periods

• 4096 refresh cycles every 64 ms

Access Time from Clock

CAS Latency = 3

5.4

CAS Latency = 2

Row to Column Delay Time (tRCD)

Row Precharge Tim (tRP)

• Random column address every clock cycle

• Programmable CAS latency (2, 3 clocks)

• Burst read/write and burst read/single write

operations capability

• Burst termination by burst stop and precharge

command

• Industrial Temperature Availability

time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are

advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products.

Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774

ADVANCEDINFORMATION,Rev. 00A

08/01/02

12 3 4 5 6 7...66

中文翻译

下载PDF

与IS42S16800A-7BI相关器件

型号	品牌	获取价格	描述	数据表
IS42S16800A-7T	ICSI	获取价格	16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
IS42S16800A-7T	ISSI	获取价格	16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
IS42S16800A-7TI	ISSI	获取价格	16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
IS42S16800A-7TI	ICSI	获取价格	16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
IS42S16800A-7TI-TR	ISSI	获取价格	Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, PLASTIC, TSOP2-54
IS42S16800A-7TL	ISSI	获取价格	16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
IS42S16800A-7TLI	ISSI	获取价格	16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
IS42S16800AL-10BL	ISSI	获取价格	暂无描述
IS42S16800AL-10BLI	ISSI	获取价格	Synchronous DRAM, 8MX16, 7ns, CMOS, PBGA54, LEAD FREE, FBGA-54
IS42S16800AL-10TL	ISSI	获取价格	Synchronous DRAM, 8MX16, 7ns, CMOS, PDSO54, LEAD FREE, TSOP2-54

与IS42S16800A-7BI相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

39
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

31
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

59
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

55

产品中心

服务支持

精选活动

关于我们

帮助中心

IS42S16800A-7BI

IS42S16800A-7BI 数据手册

与IS42S16800A-7BI相关器件

与IS42S16800A-7BI相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

IS42S16800A-7BI

IS42S16800A-7BI 数据手册

与IS42S16800A-7BI相关器件

与IS42S16800A-7BI相关文章

您还可以找

您在本页遇到什么问题？