Datasheet > IS42S16400L-7T

IS42S16400L-7T

更新时间： 2024-11-08 08:25:43

品牌	Logo	应用领域
美国芯成 - ISSI		动态存储器光电二极管
页数	文件大小	规格书
54页	561K
描述
Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54, 0.400 INCH, TSOP2-54

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IS42S16400L-7T 数据手册

IS42S16400L

1 Meg Bits x 16 Bits x 4 Banks (64-MBIT)

SYNCHRONOUS DYNAMIC RAM

ISSI

PRELIMINARY

DECEMBER 2001

FEATURES

OVERVIEW

ISSI's 64Mb Synchronous DRAM IS42S16400L is

organized as 1,048,576 bits x 16-bit x 4-bank for improved

performance.ThesynchronousDRAMsachievehigh-speed

data transfer using pipeline architecture. All inputs and

outputs signals refer to the rising edge of the clock input.

• Clock frequency: 166, 133, 100 MHz

• Fully synchronous; all signals referenced to a

positive clock edge

• Internal bank for hiding row access/precharge

• Single 3.3V power supply

• LVTTLinterface

PIN CONFIGURATIONS

54-Pin TSOP (Type II)

• Programmable burst length

– (1, 2, 4, 8, full page)

VCC

I/O0

VCCQ

I/O1

I/O2

GNDQ

I/O3

I/O4

VCCQ

I/O5

I/O6

GNDQ

I/O7

VCC

LDQM

GND

I/O15

GNDQ

I/O14

I/O13

VCCQ

I/O12

I/O11

GNDQ

I/O10

I/O9

VCCQ

I/O8

GND

• Programmableburstsequence:

Sequential/Interleave

• Self refresh modes

• 4096 refresh cycles every 64 ms

• Random column address every clock cycle

• Programmable CAS latency (2, 3 clocks)

• Burst read/write and burst read/single write

operationscapability

• Burst termination by burst stop and precharge

command

UDQM

CLK

CKE

CAS

RAS

• Byte controlled by LDQM and UDQM

• Industrialtemperatureavailability

• Package: 400-mil 54-pin TSOP II

BA0

BA1

A10

A11

VCC

GND

PIN DESCRIPTIONS

A0-A11

BA0, BA1

I/O0 to I/O15

CLK

Address Input

Write Enable

Bank Select Address

Data I/O

LDQM

UDQM

Vcc

Lower Bye, Input/Output Mask

Upper Bye, Input/Output Mask

Power

System Clock Input

Clock Enable

CKE

GND

VccQ

GNDQ

Ground

Chip Select

Power Supply for I/O Pin

Ground for I/O Pin

No Connection

RAS

Row Address Strobe Command

Column Address Strobe Command

CAS

This document contains PRELIMINARY SPECIFICATION data. ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best

Integrated Silicon Solution, Inc. — 1-800-379-4774

PRELIMINARYSPECIFICATION Rev. 00A

12/01/01

12 3 4 5 6 7...54

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与IS42S16400L-7T相关器件

型号	品牌	获取价格	描述	数据表
IS42S16400L-7TI	ICSI	获取价格	Synchronous DRAM, 4MX16, 5.4ns, CMOS, PDSO54,
IS42S16400L-7TI	ISSI	获取价格	Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54, 0.400 INCH, TSOP2-54
IS42S16400L-8T	ICSI	获取价格	Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54,
IS42S16400L-8T	ISSI	获取价格	Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54, 0.400 INCH, TSOP2-54
IS42S16400L-8TI	ISSI	获取价格	Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54, 0.400 INCH, TSOP2-54
IS42S16800-5BL	ISSI	获取价格	Synchronous DRAM, 8MX16, 5ns, CMOS, PBGA54, 8 X 8 MM, LEAD FREE, BGA-54
IS42S16800-5BLI	ISSI	获取价格	Synchronous DRAM, 8MX16, 5ns, CMOS, PBGA54, 8 X 8 MM, LEAD FREE, BGA-54
IS42S16800-5TL	ISSI	获取价格	Synchronous DRAM, 8MX16, 5ns, CMOS, PDSO54, 0.400 MM INCH, LEAD FREE, TSOP2-54
IS42S16800-5TLI	ISSI	获取价格	Synchronous DRAM, 8MX16, 5ns, CMOS, PDSO54, 0.400 MM INCH, LEAD FREE, TSOP2-54
IS42S16800-6BL	ISSI	获取价格	Synchronous DRAM, 8MX16, 5.4ns, CMOS, PBGA54, 8 X 8 MM, LEAD FREE, BGA-54

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