Datasheet > IS41C82002-60J

IS41C82002-60J

更新时间： 2024-09-17 23:59:47

品牌	Logo	应用领域
其他 - ETC		动态存储器
页数	文件大小	规格书
18页	186K
描述
x8 EDO Page Mode DRAM

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IS41C82002-60J 数据手册

IS41C82002

IS41LV82002

2M x 8 (16-MBIT) DYNAMIC RAM

WITH EDO PAGE MODE

NOVEMBER 2000

FEATURES

DESCRIPTION

• Extended Data-Out (EDO) Page Mode access cycle

TheISSI IS41C82002andIS41LV82002are2,097,152x8-bit

high-performance CMOS Dynamic Random Access

Memory. These devices offer an accelarated cycle ac-

cess called EDO Page Mode. EDO Page Mode allows

2,048 random accesses within a single row with access

cycle time as short as 20 ns per 4-bit word.

• TTL compatible inputs and outputs

• Refresh Interval:

-- 2,048 cycles/32 ms

• Refresh Mode: RAS-Only,

CAS-before-RAS (CBR), and Hidden

• Single power supply:

These features make the IS41C82002 and IS41LV82002

ideally suited for high-bandwidth graphics, digital signal

processing, high-performance computing systems, and

peripheral applications.

5V 10ꢀ or 3.3V 10ꢀ

• Byte Write and Byte Read operation via two CAS

• Industrial temperature range -40°C to 85°C

TheIS41C82002andIS41LV82002arepackagedin28-pin

300-mil SOJ and 28-pin TSOP (Type II) with JEDEC

standard pinouts.

PRODUCT SERIES OVERVIEW

KEY TIMING PARAMETERS

Part No.

Refresh

Voltage

5V 10ꢀ

3.3V 10ꢀ

IS41C82002

IS41LV82002

Parameter

-50

-60

Unit

RAS Access Time (tRAC)

CAS Access Time (tCAC)

ColumnAddressAccessTime(tAA

)

EDO Page Mode Cycle Time (tPC

)

PIN CONFIGURATION

Read/Write Cycle Time (tRC)

104

28 Pin SOJ, TSOP (Type II)

VCC

I/O0

I/O1

I/O2

I/O3

RAS

GND

I/O7

I/O6

I/O5

I/O4

CAS

PIN DESCRIPTIONS

A0-A10

I/O0-7

Address Inputs

Data Inputs/Outputs

Write Enable

Output Enable

Row Address Strobe

Column Address Strobe

Power

A10

RAS

CAS

Vcc

GND

Ground

VCC

GND

No Connection

ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any

Integrated Silicon Solution, Inc. — 1-800-379-4774

Rev. A

12/19/00

12 3 4 5 6 7...18

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与IS41C82002-60J相关器件

型号	品牌	获取价格	描述	数据表
IS41C82002-60JI	ISSI	获取价格	EDO DRAM, 2MX8, 60ns, CMOS, PDSO28, 0.300 INCH, SOJ-28
IS41C82002-60T	ISSI	获取价格	EDO DRAM, 2MX8, 60ns, CMOS, PDSO28, TSOP2-28
IS41C82002-60TI	ISSI	获取价格	EDO DRAM, 2MX8, 60ns, CMOS, PDSO28, TSOP2-28
IS41C8200-50J	ISSI	获取价格	2M x 8 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
IS41C8200-50JI	ISSI	获取价格	2M x 8 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
IS41C8200-60J	ISSI	获取价格	2M x 8 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
IS41C8200-60JI	ISSI	获取价格	2M x 8 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
IS41C8200A-60J	ISSI	获取价格	EDO DRAM, 2MX8, 60ns, CMOS, PDSO28, 0.300 INCH, SOJ-28
IS41C8205	ISSI	获取价格	2M x 8 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE
IS41C82052-50J	ISSI	获取价格	Fast Page DRAM, 2MX8, 50ns, CMOS, PDSO28, 0.300 INCH, SOJ-28

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