是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Obsolete | 零件包装代码: | TSOP2 |
包装说明: | TSOP2, | 针数: | 50 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8542.32.00.02 | 风险等级: | 5.73 |
访问模式: | FAST PAGE WITH EDO | 最长访问时间: | 60 ns |
其他特性: | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH | JESD-30 代码: | R-PDSO-G44 |
JESD-609代码: | e3 | 长度: | 18.415 mm |
内存密度: | 16777216 bit | 内存集成电路类型: | EDO DRAM |
内存宽度: | 16 | 湿度敏感等级: | 3 |
功能数量: | 1 | 端口数量: | 1 |
端子数量: | 44 | 字数: | 1048576 words |
字数代码: | 1000000 | 工作模式: | ASYNCHRONOUS |
最高工作温度: | 70 °C | 最低工作温度: | |
组织: | 1MX16 | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | TSOP2 | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE, THIN PROFILE | 峰值回流温度(摄氏度): | 260 |
认证状态: | Not Qualified | 座面最大高度: | 1.2 mm |
自我刷新: | YES | 最大供电电压 (Vsup): | 5.5 V |
最小供电电压 (Vsup): | 4.5 V | 标称供电电压 (Vsup): | 5 V |
表面贴装: | YES | 技术: | CMOS |
温度等级: | COMMERCIAL | 端子面层: | Matte Tin (Sn) |
端子形式: | GULL WING | 端子节距: | 0.8 mm |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | 40 |
宽度: | 10.16 mm | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IS41C16100-60KLI | ISSI |
获取价格 |
1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
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IS41C16100-60T | ISSI |
获取价格 |
1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
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IS41C16100-60TE | ISSI |
获取价格 |
EDO DRAM, 1MX16, 60ns, CMOS, PDSO44, 0.400 INCH, TSOP2-50/44 |
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IS41C16100-60TI | ISSI |
获取价格 |
1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
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IS41C16100-60TL | ISSI |
获取价格 |
1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
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IS41C16100-60TLI | ISSI |
获取价格 |
1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
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IS41C16100-60TL-TR | ISSI |
获取价格 |
EDO DRAM, 1MX16, 60ns, CMOS, PDSO44, 0.400 INCH, LEADFREE, PLASTIC, TSOP2-50/44 |
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IS41C16100C | ISSI |
获取价格 |
16Mb DRAM WITH EDO PAGE MODE |
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IS41C16100C-50KLI-TR | ISSI |
获取价格 |
EDO DRAM, 1MX16, 50ns, CMOS, PDSO42, SOJ-42 |
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IS41C16100C-50TI-TR | ISSI |
获取价格 |
EDO DRAM, 1MX16, 50ns, CMOS, PDSO44, |
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