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IS25C32A-2GLI PDF预览

IS25C32A-2GLI

更新时间: 2024-02-05 23:15:43
品牌 Logo 应用领域
美国芯成 - ISSI 存储内存集成电路光电二极管可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟
页数 文件大小 规格书
17页 135K
描述
32K-BIT/64K-BIT SPI SERIAL ELECTRICALLY ERASABLE PROM

IS25C32A-2GLI 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TSSOP包装说明:LEAD FREE, PLASTIC, MO-153, TSSOP-8
针数:8Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.32.00.51
风险等级:5.76最大时钟频率 (fCLK):2 MHz
数据保留时间-最小值:100耐久性:1000000 Write/Erase Cycles
JESD-30 代码:R-PDSO-G8JESD-609代码:e3
长度:4.4 mm内存密度:32768 bit
内存集成电路类型:EEPROM内存宽度:8
功能数量:1端子数量:8
字数:4096 words字数代码:4000
工作模式:SYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:4KX8
封装主体材料:PLASTIC/EPOXY封装代码:TSSOP
封装等效代码:TSSOP8,.25封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH并行/串行:SERIAL
电源:2/5 V认证状态:Not Qualified
座面最大高度:1.2 mm串行总线类型:SPI
最大待机电流:0.000001 A子类别:EEPROMs
最大压摆率:0.005 mA最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):1.8 V标称供电电压 (Vsup):2.5 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:Matte Tin (Sn) - annealed
端子形式:GULL WING端子节距:0.65 mm
端子位置:DUAL宽度:3 mm
最长写入周期时间 (tWC):10 ms写保护:HARDWARE/SOFTWARE
Base Number Matches:1

IS25C32A-2GLI 数据手册

 浏览型号IS25C32A-2GLI的Datasheet PDF文件第2页浏览型号IS25C32A-2GLI的Datasheet PDF文件第3页浏览型号IS25C32A-2GLI的Datasheet PDF文件第4页浏览型号IS25C32A-2GLI的Datasheet PDF文件第5页浏览型号IS25C32A-2GLI的Datasheet PDF文件第6页浏览型号IS25C32A-2GLI的Datasheet PDF文件第7页 
®
IS25C32A  
IS25C64A  
ISSI  
32K-BIT/64K-BIT SPI SERIAL  
ELECTRICALLY ERASABLE PROM  
PreliminaryInformation  
March2006  
FEATURES  
DESCRIPTION  
TheIS25C32AandIS25C64Aareelectricallyerasable  
PROM devices that use the Serial Peripheral Interface  
(SPI) for communications. The IS25C32A is 32Kbit  
(4096 x 8) and the IS25C64A is 64Kbit (8192 x 8). The  
IS25C32A/64A EEPROMs are offered in a wide  
• SerialPeripheralInterface(SPI)Compatible  
— Supports SPI Modes 0 (0,0) and 3 (1,1)  
• Wide-voltageOperation  
— Vcc = 1.8V to 5.5V  
• LowpowerCMOS  
operating voltage range of 1.8V to 5.5V to be compatible  
with most application voltages. ISSI designed the  
IS25C32A/64A to be an efficient SPI EEPROM solution.  
The devices are packaged in 8-pin PDIP, 8-pin SOIC,  
and 8-pin TSSOP.  
— Active current less than 3.0 mA (2.5V)  
— Standby current less than 2.0 µA (2.5V)  
• Block Write Protection  
— Protect 1/4, 1/2, or Entire Array  
• 32 byte page write mode  
— Partial page writes allowed  
• 10 MHz Clock Rate (5V)  
• Self timed write cycles (5 ms Typical)  
• High-reliability  
— Endurance: 1 million cycles per byte  
— Data retention: 100 years  
• IndustrialandAutomotivetemperatureranges  
• 8-pin PDIP, 8-pin SOIC, and 8-pin TSSOP Packages  
available  
ThefunctionalfeaturesoftheIS25C32A/64Aallowthem  
to be among the most advanced serial non-volatile  
memories available. Each device has a Chip-Select  
(CS) pin, and a 3-wire interface of Serial Data In (SI),  
Serial Data Out (SO), and Serial Clock (SCK). While  
the3-wireinterfaceoftheIS25C32A/64Aprovidesfor  
high-speed access, a HOLD pin allows the memories to  
ignore the interface in a suspended state; later the  
HOLDpinre-activatescommunicationwithoutre-  
initializing the serial sequence. A Status Register  
facilitates a flexible write protection mechanism, and a  
• Lead-freeavailable  
device-readybit(RDY).  
Copyright © 2006 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time  
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to  
obtain the latest version of this device specification before relying on any published information and before placing orders for products.  
Integrated Silicon Solution, Inc. — 1-800-379-4774  
1
Preliminary Information Rev. 00E  
02/07/06  

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