Datasheet > 存储 > EEPROM> IS25C128-2WI

IS25C128-2WI

更新时间： 2024-09-20 04:23:03

品牌	Logo	应用领域
美国芯成 - ISSI		可编程只读存储器
页数	文件大小	规格书
17页	138K
描述
128K-bit/ 256K-bit SPI SERIAL ELECTRICALLY ERASABLE PROM

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IS25C128-2WI 数据手册

IS25C128

IS25C256

128K-bit/ 256K-bit SPI SERIAL

ELECTRICALLY ERASABLE PROM

ISSI

AdvancedInformation

JULY2006

FEATURES

• SerialPeripheralInterface(SPI)Compatible

— Supports SPI Modes 0 (0,0) and 3 (1,1)

• LowpowerCMOS

— Active current less than 3.0 mA (2.5V)

— Standby current less than 20 µA (2.5V)

• Low-voltageOperation

— Vcc = 1.8V to 5.5V

• Block Write Protection

— Protect 1/4, 1/2, or Entire Array

• 64 byte page write mode

DESCRIPTION

TheIS25C128andIS25C256areelectricallyerasable

PROM devices that use the Serial Peripheral Interface

(SPI) for communications. The IS25C128 is 128Kbit

(16K x 8) and the IS25C256 is 256Kbit (32K x 8). The

IS25C128/256 EEPROMs are offered in a wide

operating voltage range of 1.8V to 5.5V for compatibility

with most application voltages. ISSI designed the

IS25C128/256 to be an efficient SPI EEPROM solution.

The devices are packaged in 8-pin JEDEC SOIC, 8-pin

EIAJ SOIC, and 8-pin PDIP.

— Partial page writes allowed

• 2.1 MHz Clock Rate (5V)

• Self timed write cycles

— 5ms max @ 2.5V

• High-reliability

— Endurance: 1,000,000 cycles per byte

— Data retention: 100 years

• 8-pin JEDEC SOIC, 8-pin EIAJ SOIC, and 8-pin PDIP

packagesavailable

• IndustrialandAutomotivetemperatureranges

• Lead-freeavailable

ThefunctionalfeaturesoftheIS25C128/256allowthem

to be among the most advanced serial non-volatile

memories available. Each device has a Chip-Select

(CS) pin, and a 3-wire interface of Serial Data In (SI),

Serial Data Out (SO), and Serial Clock (SCK). While

the3-wireinterfaceoftheIS25C128/256providesfor

high-speed access, a HOLD pin allows the memories to

ignore the interface in a suspended state; later the

HOLD pinre-activatescommunicationwithoutre-

initializing the serial sequence. A Status Register

facilitates a flexible write protection mechanism, and a

device-readybit(RDY).

without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to

obtain the latest version of this device specification before relying on any published information and before placing orders for products.

IntegratedSiliconSolution,Inc.—1-800-379-4774

Advanced Information Rev. 00E

06/13/06

12 3 4 5 6 7...17

中文翻译

下载PDF

与IS25C128-2WI相关器件

型号	品牌	获取价格	描述	数据表
IS25C128-2WLI	ISSI	获取价格	128K-bit/ 256K-bit SPI SERIAL ELECTRICALLY ERASABLE PROM
IS25C128-3GA3	ISSI	获取价格	128K-bit/ 256K-bit SPI SERIAL ELECTRICALLY ERASABLE PROM
IS25C128-3GLA3	ISSI	获取价格	128K-bit/ 256K-bit SPI SERIAL ELECTRICALLY ERASABLE PROM
IS25C128-3PA3	ISSI	获取价格	128K-bit/ 256K-bit SPI SERIAL ELECTRICALLY ERASABLE PROM
IS25C128-3PI	ISSI	获取价格	EEPROM, 16KX8, Serial, CMOS, PDIP8, 0.300 INCH, PLASTIC, DIP-8
IS25C128-3PLA3	ISSI	获取价格	128K-bit/ 256K-bit SPI SERIAL ELECTRICALLY ERASABLE PROM
IS25C128-3WA3	ISSI	获取价格	128K-bit/ 256K-bit SPI SERIAL ELECTRICALLY ERASABLE PROM
IS25C128-3WLA3	ISSI	获取价格	128K-bit/ 256K-bit SPI SERIAL ELECTRICALLY ERASABLE PROM
IS25C128A	ISSI	获取价格	128K-bit SPI SERIAL ELECTRICALLY ERASABLE PROM
IS25C128A-2GI	ISSI	获取价格	EEPROM, 16KX8, Serial, CMOS, PDSO8, 0.150 INCH, PLASTIC, SOP-8

与IS25C128-2WI相关文章

摩尔斯微电子在美国约书亚树国家公园测试 Wi-Fi HaLow
2024-09-18

34
贸泽上架Tallysman TW5386智能GNSS天线
2024-09-18

31
SL74HC10N：高性能三输入与非门解析
2024-09-03

104
AIC1781A 电池充电控制器深度解析
2024-09-03

100

产品中心

服务支持

精选活动

关于我们

帮助中心

IS25C128-2WI

IS25C128-2WI 数据手册

与IS25C128-2WI相关器件

与IS25C128-2WI相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

IS25C128-2WI

IS25C128-2WI 数据手册

与IS25C128-2WI相关器件

与IS25C128-2WI相关文章

您还可以找

您在本页遇到什么问题？