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IS25C128-2GI PDF预览

IS25C128-2GI

更新时间: 2024-09-20 04:23:03
品牌 Logo 应用领域
美国芯成 - ISSI 可编程只读存储器
页数 文件大小 规格书
17页 138K
描述
128K-bit/ 256K-bit SPI SERIAL ELECTRICALLY ERASABLE PROM

IS25C128-2GI 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:SOIC包装说明:SOP, SOP8,.25
针数:8Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8542.32.00.51
风险等级:5.92最大时钟频率 (fCLK):0.5 MHz
数据保留时间-最小值:100耐久性:1000000 Write/Erase Cycles
JESD-30 代码:R-PDSO-G8JESD-609代码:e0
长度:4.9 mm内存密度:131072 bit
内存集成电路类型:EEPROM内存宽度:8
功能数量:1端子数量:8
字数:16384 words字数代码:16000
工作模式:SYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:16KX8
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装等效代码:SOP8,.25封装形状:RECTANGULAR
封装形式:SMALL OUTLINE并行/串行:SERIAL
峰值回流温度(摄氏度):240电源:2/5 V
认证状态:Not Qualified座面最大高度:1.73 mm
串行总线类型:SPI最大待机电流:0.000015 A
子类别:EEPROMs最大压摆率:0.005 mA
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):1.8 V
标称供电电压 (Vsup):2.5 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:30宽度:3.9 mm
最长写入周期时间 (tWC):10 ms写保护:HARDWARE
Base Number Matches:1

IS25C128-2GI 数据手册

 浏览型号IS25C128-2GI的Datasheet PDF文件第2页浏览型号IS25C128-2GI的Datasheet PDF文件第3页浏览型号IS25C128-2GI的Datasheet PDF文件第4页浏览型号IS25C128-2GI的Datasheet PDF文件第5页浏览型号IS25C128-2GI的Datasheet PDF文件第6页浏览型号IS25C128-2GI的Datasheet PDF文件第7页 
®
IS25C128  
IS25C256  
128K-bit/ 256K-bit SPI SERIAL  
ELECTRICALLY ERASABLE PROM  
ISSI  
AdvancedInformation  
JULY2006  
FEATURES  
• SerialPeripheralInterface(SPI)Compatible  
— Supports SPI Modes 0 (0,0) and 3 (1,1)  
• LowpowerCMOS  
— Active current less than 3.0 mA (2.5V)  
— Standby current less than 20 µA (2.5V)  
• Low-voltageOperation  
— Vcc = 1.8V to 5.5V  
• Block Write Protection  
— Protect 1/4, 1/2, or Entire Array  
• 64 byte page write mode  
DESCRIPTION  
TheIS25C128andIS25C256areelectricallyerasable  
PROM devices that use the Serial Peripheral Interface  
(SPI) for communications. The IS25C128 is 128Kbit  
(16K x 8) and the IS25C256 is 256Kbit (32K x 8). The  
IS25C128/256 EEPROMs are offered in a wide  
operating voltage range of 1.8V to 5.5V for compatibility  
with most application voltages. ISSI designed the  
IS25C128/256 to be an efficient SPI EEPROM solution.  
The devices are packaged in 8-pin JEDEC SOIC, 8-pin  
EIAJ SOIC, and 8-pin PDIP.  
— Partial page writes allowed  
• 2.1 MHz Clock Rate (5V)  
• Self timed write cycles  
— 5ms max @ 2.5V  
• High-reliability  
— Endurance: 1,000,000 cycles per byte  
— Data retention: 100 years  
• 8-pin JEDEC SOIC, 8-pin EIAJ SOIC, and 8-pin PDIP  
packagesavailable  
• IndustrialandAutomotivetemperatureranges  
• Lead-freeavailable  
ThefunctionalfeaturesoftheIS25C128/256allowthem  
to be among the most advanced serial non-volatile  
memories available. Each device has a Chip-Select  
(CS) pin, and a 3-wire interface of Serial Data In (SI),  
Serial Data Out (SO), and Serial Clock (SCK). While  
the3-wireinterfaceoftheIS25C128/256providesfor  
high-speed access, a HOLD pin allows the memories to  
ignore the interface in a suspended state; later the  
HOLD pinre-activatescommunicationwithoutre-  
initializing the serial sequence. A Status Register  
facilitates a flexible write protection mechanism, and a  
device-readybit(RDY).  
Copyright © 2006 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time  
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to  
obtain the latest version of this device specification before relying on any published information and before placing orders for products.  
IntegratedSiliconSolution,Inc.1-800-379-4774  
1
Advanced Information Rev. 00E  
06/13/06  

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