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IS25C01-2ZLI PDF预览

IS25C01-2ZLI

更新时间: 2024-11-21 04:06:59
品牌 Logo 应用领域
美国芯成 - ISSI 存储内存集成电路光电二极管可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟
页数 文件大小 规格书
17页 133K
描述
1K-BIT SPI SERIAL ELECTRICALLY ERASABLE PROM

IS25C01-2ZLI 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TSSOP
包装说明:TSSOP, TSSOP8,.25针数:8
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.51风险等级:5.84
Is Samacsys:N最大时钟频率 (fCLK):10 MHz
数据保留时间-最小值:100耐久性:1000000 Write/Erase Cycles
JESD-30 代码:R-PDSO-G8JESD-609代码:e3
长度:4.4 mm内存密度:1024 bit
内存集成电路类型:EEPROM内存宽度:8
湿度敏感等级:1功能数量:1
端子数量:8字数:128 words
字数代码:128工作模式:SYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:128X8封装主体材料:PLASTIC/EPOXY
封装代码:TSSOP封装等效代码:TSSOP8,.25
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
并行/串行:SERIAL峰值回流温度(摄氏度):260
电源:2/5 V认证状态:Not Qualified
座面最大高度:1.2 mm串行总线类型:SPI
最大待机电流:5e-7 A子类别:EEPROMs
最大压摆率:0.005 mA最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):1.8 V标称供电电压 (Vsup):2.5 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:Matte Tin (Sn) - annealed
端子形式:GULL WING端子节距:0.65 mm
端子位置:DUAL处于峰值回流温度下的最长时间:40
宽度:3 mm最长写入周期时间 (tWC):5 ms
写保护:HARDWAREBase Number Matches:1

IS25C01-2ZLI 数据手册

 浏览型号IS25C01-2ZLI的Datasheet PDF文件第2页浏览型号IS25C01-2ZLI的Datasheet PDF文件第3页浏览型号IS25C01-2ZLI的Datasheet PDF文件第4页浏览型号IS25C01-2ZLI的Datasheet PDF文件第5页浏览型号IS25C01-2ZLI的Datasheet PDF文件第6页浏览型号IS25C01-2ZLI的Datasheet PDF文件第7页 
®
IS25C01  
1K-BIT SPI SERIAL  
ISSI  
PreliminaryInformation  
January2006  
ELECTRICALLY ERASABLE PROM  
FEATURES  
• SerialPeripheralInterface(SPI)Compatible  
— Supports SPI Modes 0 (0,0) and 3 (1,1)  
• Low-voltageOperation  
— Vcc = 1.8V to 5.5V  
• LowpowerCMOS  
— Active current less than 3.0 mA (2.5V)  
— Standby current less than 1 µA (2.5V)  
• Block Write Protection  
DESCRIPTION  
The IS25C01 is an electrically erasable PROM device  
that uses the Serial Peripheral Interface (SPI) for  
communications. The IS25C01 is 1Kbit  
(128 x 8). The IS25C01 EEPROM is offered in a wide  
operating voltage range of 1.8V to 5.5V to be compatible  
with most application voltages. ISSI designed the  
IS25C01 to be an efficient SPI EEPROM solution. The  
device is packaged in 8-pin PDIP, 8-pin SOIC, and 8-pin  
TSSOP.  
— Protect 1/4, 1/2, or Entire Array  
8bytepagewritemode  
— Partial page writes allowed  
The functional features of the IS25C01 allow it to be  
amongthemostversatileserialnon-volatilememories  
available. Each device has a Chip-Select (CS) pin, and  
a 3-wire interface of Serial Data In (SI), Serial Data Out  
(SO), and Serial Clock (SCK). While the 3-wire inter-  
face of the IS25C01 provides for high-speed access, a  
HOLD pin allows the memories to ignore the interface in  
a suspended state; later the HOLD pin re-activates  
communication without re-initializing the serial se-  
quence. A Status Register facilitates a flexible write  
• 10 MHz Clock Rate (5V)  
• Self timed write cycles  
— 5 ms max. @ 2.5V  
• High-reliability  
— Endurance: 1 million cycles per byte  
— Data retention: 100 years  
• 8-pin PDIP, 8-pin SOIC, and 8-pin TSSOP packages  
areavailable  
• Lead-freeavailable  
protection mechanism, and a device-ready bit (RDY).  
Copyright © 2006 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time  
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to  
obtain the latest version of this device specification before relying on any published information and before placing orders for products.  
Integrated Silicon Solution, Inc. — 1-800-379-4774  
1
Preliminary Information Rev. 00B  
12/23/05  

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