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IS24C64-3GI PDF预览

IS24C64-3GI

更新时间: 2024-11-17 23:59:43
品牌 Logo 应用领域
美国芯成 - ISSI 可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数 文件大小 规格书
11页 84K
描述
EEPROM

IS24C64-3GI 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:SOIC
包装说明:SOP, SOP8,.25针数:8
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8542.32.00.51风险等级:5.31
其他特性:HARDWARE WRITE PROTECTION; DATA RETENTION 100 YEARS; 1 MILLION ENDURANCE CYCLES最大时钟频率 (fCLK):0.4 MHz
数据保留时间-最小值:100耐久性:1000000 Write/Erase Cycles
I2C控制字节:1010DDDRJESD-30 代码:R-PDSO-G8
JESD-609代码:e0长度:4.9 mm
内存密度:65536 bit内存集成电路类型:EEPROM
内存宽度:8湿度敏感等级:3
功能数量:1端子数量:8
字数:8192 words字数代码:8000
工作模式:SYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:8KX8
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装等效代码:SOP8,.25封装形状:RECTANGULAR
封装形式:SMALL OUTLINE并行/串行:SERIAL
峰值回流温度(摄氏度):240电源:3/5 V
认证状态:Not Qualified座面最大高度:1.75 mm
串行总线类型:I2C最大待机电流:0.00001 A
子类别:EEPROMs最大压摆率:0.003 mA
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):2.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:10宽度:3.9 mm
最长写入周期时间 (tWC):5 ms写保护:HARDWARE
Base Number Matches:1

IS24C64-3GI 数据手册

 浏览型号IS24C64-3GI的Datasheet PDF文件第2页浏览型号IS24C64-3GI的Datasheet PDF文件第3页浏览型号IS24C64-3GI的Datasheet PDF文件第4页浏览型号IS24C64-3GI的Datasheet PDF文件第5页浏览型号IS24C64-3GI的Datasheet PDF文件第6页浏览型号IS24C64-3GI的Datasheet PDF文件第7页 
®
IS24C32-2/3  
IS24C64-2/3  
65,536-bit/32,768-bit 2-WIRE SERIAL  
CMOS EEPROM  
ISSI  
PRELIMINARY INFORMATION  
APRIL 2001  
FEATURES  
• Low Power CMOS Technology  
• 8-pin PDIP and 8-pin SOIC packages  
• Self time write cycle with auto clear  
– Standby Current less than 10 µA (5.5V)  
– Read Current (typical) less than 1 mA (5.5V)  
– Write Current (typical) less than 3 mA (5.5V)  
• Low Voltage Operation  
– 5 ms @ 2.5V  
• Organization:  
– IS24C64-2 and IS24C64-3: 8192x8  
– IS24C32-2 and IS24C32-3: 4096x8  
• 32-Byte Page Write Buffer  
• Two-Wire Serial Interface  
– Bi-directional data transfer protocol  
• HighReliability  
– IS24C64-2 & IS24C32-2: Vcc = 1.8V to 5.5V  
– IS24C64-3 & IS24C32-3: Vcc = 2.5V to 5.5V  
• 100 KHz (1.8V) and 400 KHz (5V) Compatibility  
• Hardware Data Protection  
– Write Protect Pin  
• Sequential Read Feature  
– Endurance: 1,000,000 Cycles  
– Data Retention: 100 Years  
• Commercial and Industrial temperature ranges  
• Filtered Inputs for Noise Suppression  
PRODUCT OFFERING OVERVIEW  
Part No  
Voltage  
1.8V-5.5V  
2.5V-5.5V  
1.8V-5.5V  
2.5V-5.5V  
Speed  
Standby ICC  
< 5 µA  
Read ICC  
1 mA  
Write ICC  
3 mA  
Temperature  
IS24C64-2  
IS24C64-3  
IS24C32-2  
IS24C32-3  
100 KHz  
400 KHz  
100 KHz  
400 KHz  
C,I  
C,I  
C,I  
C,I  
< 10 µA  
< 5 µA  
1 mA  
3 mA  
1 mA  
3 mA  
< 10 µA  
1 mA  
3 mA  
DESCRIPTION  
The IS24C64-2 is a 1.8V (1.8V-5.5V) 64K-bit (8192 x 8)  
Electrically Erasable PROM, IS24C64-3 is a 2.5V (2.5V-  
5.5V) 64K-bit (8192 x 8) Electrically Erasable PROM,  
IS24C32-2 is a 1.8V (1.8V-5.5V) 32K-bit (4096 x 8)  
Electrically Erasable PROM and the IS24C32-3 is a 2.5V  
(2.5V-5.5V) 32K-bit (4096 x 8) Electrically Erasable  
PROM.  
The IS24CXX (IS24C64-2, IS24C64-3, IS24C32-2 and  
IS24C32-3) family is a low-cost and low voltage 2-wire  
Serial EEPROM. It is fabricated using ISSI’s advanced  
CMOS EEPROM technology and provides a low power  
and low voltage operation. The IS24CXX family features  
a write protection feature, and is available in 8-pin DIP and  
8-pin SOIC packages.  
This document contains PRELIMINARY INFORMATION data. ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the  
best possible product. We assume no responsibility for any errors which may appear in this publication. © Copyright 2001, Integrated Silicon Solution, Inc.  
Integrated Silicon Solution, Inc. — 1-800-379-4774  
PRELIMINARY INFORMATION Rev. 00B  
1
04/04/01  

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