是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Obsolete | 零件包装代码: | SOIC |
包装说明: | TSSOP-8 | 针数: | 8 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8542.32.00.51 | 风险等级: | 5.92 |
Is Samacsys: | N | 最大时钟频率 (fCLK): | 0.1 MHz |
JESD-30 代码: | R-PDSO-G8 | JESD-609代码: | e0 |
长度: | 4.4 mm | 内存密度: | 2048 bit |
内存集成电路类型: | EEPROM | 内存宽度: | 8 |
功能数量: | 1 | 端子数量: | 8 |
字数: | 256 words | 字数代码: | 256 |
工作模式: | SYNCHRONOUS | 最高工作温度: | 85 °C |
最低工作温度: | -40 °C | 组织: | 256X8 |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | TSSOP |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH |
并行/串行: | SERIAL | 峰值回流温度(摄氏度): | 240 |
认证状态: | Not Qualified | 座面最大高度: | 1.2 mm |
串行总线类型: | I2C | 最大供电电压 (Vsup): | 5.5 V |
最小供电电压 (Vsup): | 1.8 V | 标称供电电压 (Vsup): | 2.5 V |
表面贴装: | YES | 技术: | CMOS |
温度等级: | INDUSTRIAL | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | GULL WING | 端子节距: | 0.65 mm |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | 30 |
宽度: | 3 mm | 最长写入周期时间 (tWC): | 10 ms |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IS24C52-3G | ISSI |
获取价格 |
2k-bit 2-WIRE SERIAL CMOS EEPROM with Permanent Write-Protection | |
IS24C52-3GI | ISSI |
获取价格 |
2k-bit 2-WIRE SERIAL CMOS EEPROM with Permanent Write-Protection | |
IS24C52-3S | ISSI |
获取价格 |
2k-bit 2-WIRE SERIAL CMOS EEPROM with Permanent Write-Protection | |
IS24C52-3SI | ISSI |
获取价格 |
2k-bit 2-WIRE SERIAL CMOS EEPROM with Permanent Write-Protection | |
IS24C52-3Z | ISSI |
获取价格 |
2k-bit 2-WIRE SERIAL CMOS EEPROM with Permanent Write-Protection | |
IS24C52-3ZI | ISSI |
获取价格 |
2k-bit 2-WIRE SERIAL CMOS EEPROM with Permanent Write-Protection | |
IS24C64 | ISSI |
获取价格 |
65,536-bit/32,768-bit 2-WIRE SERIAL CMOS EEPROM | |
IS24C64-2 | ISSI |
获取价格 |
65,536-bit/32,768-bit 2-WIRE SERIAL CMOS EEPROM | |
IS24C64-2G | ISSI |
获取价格 |
EEPROM, 8KX8, Serial, CMOS, PDSO8, SOIC-8 | |
IS24C64-2GI | ISSI |
获取价格 |
EEPROM |