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IS24C16-G

更新时间： 2024-09-19 22:48:03
品牌 Logo 应用领域
美国芯成 - ISSI 存储内存集成电路光电二极管可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟
页数 文件大小 规格书
10页 80K
描述
16,384-BIT SERIAL ELECTRICALLY ERASABLE PROM

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中文翻译

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IS24C16-G 技术参数

是否无铅： 含铅是否Rohs认证： 不符合
生命周期：Obsolete零件包装代码：SOIC
包装说明：SOP, SOP8,.25针数：8
Reach Compliance Code：not_compliantECCN代码：EAR99
HTS代码：8542.32.00.51风险等级：5.8
Is Samacsys：N其他特性：HARDWARE WRITE PROTECTION; DATA RETENTION 100 YEARS; 100K ENDURANCE CYCLES
最大时钟频率 (fCLK)：0.4 MHz数据保留时间-最小值：100
耐久性：100000 Write/Erase CyclesI2C控制字节：1010MMMR
JESD-30 代码：R-PDSO-G8JESD-609代码：e0
长度：4.9 mm内存密度：16384 bit
内存集成电路类型：EEPROM内存宽度：8
功能数量：1端子数量：8
字数：2048 words字数代码：2000
工作模式：SYNCHRONOUS最高工作温度：70 °C
最低工作温度：组织：2KX8
封装主体材料：PLASTIC/EPOXY封装代码：SOP
封装等效代码：SOP8,.25封装形状：RECTANGULAR
封装形式：SMALL OUTLINE并行/串行：SERIAL
峰值回流温度（摄氏度）：NOT SPECIFIED电源：5 V
认证状态：Not Qualified座面最大高度：1.75 mm
串行总线类型：I2C最大待机电流：0.000035 A
子类别：EEPROMs最大压摆率：0.003 mA
最大供电电压 (Vsup)：5.5 V最小供电电压 (Vsup)：4.5 V
标称供电电压 (Vsup)：5 V表面贴装：YES
技术：CMOS温度等级：COMMERCIAL
端子面层：Tin/Lead (Sn/Pb)端子形式：GULL WING
端子节距：1.27 mm端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED宽度：3.9 mm
最长写入周期时间 (tWC)：10 ms写保护：HARDWARE
Base Number Matches：1

IS24C16-G 数据手册

 浏览型号IS24C16-G的Datasheet PDF文件第2页浏览型号IS24C16-G的Datasheet PDF文件第3页浏览型号IS24C16-G的Datasheet PDF文件第4页浏览型号IS24C16-G的Datasheet PDF文件第5页浏览型号IS24C16-G的Datasheet PDF文件第6页浏览型号IS24C16-G的Datasheet PDF文件第7页 
®
IS24C16  
16,384-BIT SERIAL ELECTRICALLY  
ERASABLE PROM  
ISSI
ADVANCE INFORMATION  
OCTOBER 1997  
OVERVIEW  
FEATURES  
The IS24C16 is a low cost, low power, low voltage  
serial EEPROM and organized as 2,048 x 8 bits. The  
memory is configured as 128 pages of 16 bytes each. It is  
fabricated using ISSI’s advanced CMOS EEPROM tech-  
nology and operates from a single supply.  
• Low power CMOS  
– Active current less than 3.0 mA  
– Standby current less than 35 µA  
• Hardware write protection  
– Write control pin  
The IS24C16 is internally organized as a 256 x 8 memory  
bank. The IS24C16 features a serial interface and soft-  
ware protocol allowing operation on a simple 2-wire bus.  
Included is a bidirectional serial data bus synchronized by  
a clock offering flexible byte write and a faster 16-byte  
pagewrite.Awriteprotectpincanprotectdataintheupper  
quadrant of memory.  
• Internally organized as eight banks  
– 256 pages x 8 bytes  
• Two-wire serial interface  
— Bidirectional data transfer protocol  
• Flexible byte write and 16-byte page-write  
modes  
• High-reliability  
– Endurance: 100,000 cycles per byte  
– Data retention: 100 years  
• Automatic word address incrementing  
— Sequential register read  
• Filtered inputs for noise suppression  
• 8-pin PDIP or SOIC packages  
PIN CONFIGURATION  
8-Pin DIP and SOIC  
PIN DESCRIPTIONS  
SerialClock(SCL)-TheSCLinputisusedtoclockalldata  
into and out of the device. In the WRITE mode, data must  
remainstablewhenSCLisHIGH. IntheREADmode, data  
is clocked out on the falling edge of SCL.  
A0  
A1  
1
2
3
4
8
7
6
5
VCC  
WC  
SerialData(SDA)-TheSDApinisabidirectionalpinused  
to transfer data into and out of the device. Data may  
change only when SCL is LOW. It is an open-drain output,  
and may be wire-ORed with any number of open-drain or  
open-collector outputs.  
A2  
SCL  
SDA  
GND  
PIN DESCRIPTIONS  
A0, A1, and A2: These pins are not connected.  
A0-A2  
SDA  
SCL  
WC  
Address Inputs (No connection)  
Serial Data I/O  
Serial Clock Input  
Write Control Input  
Power  
Write Control (WC) - The Write Control input is used to  
disable any attempt to write to the memory. When HIGH,  
the upper half of array is protected against write opera-  
tions;whenLOW,thewritefunctionisnormal.Thepartcan  
be read independent of the state of WC pin. When not  
connected this pin will be pulled LOW.  
Vcc  
GND  
Ground  
This document contains ADVANCE INFORMATION data. ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible  
product. We assume no responsibility for any errors which may appear in this publication. © Copyright 1997, Integrated Silicon Solution, Inc.  
Integrated Silicon Solution, Inc.  
ADVANCE INFORMATION EE001-0C  
1
10/03/97  
1234567...10

中文翻译

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IS24C16-G 替代型号

型号 品牌 替代类型 描述 数据表
IS24C16-5GA ISSI

功能相似

 1K-bit/2K-bit/4K-bit/8K-bit/16K-bit 2-WIRE SERIAL CMOS EEPROM
M24C16-MN3T/G STMICROELECTRONICS

功能相似

 16Kbit, 8Kbit, 4Kbit, 2Kbit and 1Kbit Serial I2C Bus EEPROM

与IS24C16-G相关器件

型号 品牌 获取价格 描述 数据表
IS24C16-GA ISSI

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 		EEPROM, 2KX8, Serial, CMOS, PDSO8,
IS24C16-GI ISSI

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 		16,384-BIT SERIAL ELECTRICALLY ERASABLE PROM
IS24C16-P ISSI

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 		16,384-BIT SERIAL ELECTRICALLY ERASABLE PROM
IS24C16-PA ISSI

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 		暂无描述
IS24C16-PI ISSI

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 		16,384-BIT SERIAL ELECTRICALLY ERASABLE PROM
IS24C256 ISSI

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 		262,144-bit 2-WIRE SERIAL CMOS EEPROM
IS24C256-2B ISSI

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 		EEPROM, 32KX8, Serial, CMOS, PBGA8, BGA-8
IS24C256-2BI ISSI

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 		EEPROM, 32KX8, Serial, CMOS, PBGA8, BGA-8
IS24C256-2G ISSI

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 		262,144-bit 2-WIRE SERIAL CMOS EEPROM
IS24C256-2GI ISSI

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 		262,144-bit 2-WIRE SERIAL CMOS EEPROM

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