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IS24C02B-2PI PDF预览

IS24C02B-2PI

更新时间: 2024-09-19 04:10:11
品牌 Logo 应用领域
美国芯成 - ISSI 存储内存集成电路光电二极管双倍数据速率可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟
页数 文件大小 规格书
19页 142K
描述
1K-bit/2K-bit 2-WIRE SERIAL CMOS EEPROM

IS24C02B-2PI 技术参数

是否无铅:含铅是否Rohs认证:不符合
生命周期:Obsolete零件包装代码:DIP
包装说明:DIP, DIP8,.3针数:8
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8542.32.00.51风险等级:5.87
Is Samacsys:N最大时钟频率 (fCLK):0.1 MHz
数据保留时间-最小值:100耐久性:1000000 Write/Erase Cycles
I2C控制字节:1010DDDRJESD-30 代码:R-PDIP-T8
JESD-609代码:e0长度:9.325 mm
内存密度:2048 bit内存集成电路类型:EEPROM
内存宽度:8湿度敏感等级:3
功能数量:1端子数量:8
字数:256 words字数代码:256
工作模式:SYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:256X8
封装主体材料:PLASTIC/EPOXY封装代码:DIP
封装等效代码:DIP8,.3封装形状:RECTANGULAR
封装形式:IN-LINE并行/串行:SERIAL
峰值回流温度(摄氏度):NOT SPECIFIED电源:2/5 V
认证状态:Not Qualified座面最大高度:4.57 mm
串行总线类型:I2C最大待机电流:0.000001 A
子类别:EEPROMs最大压摆率:0.003 mA
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):1.8 V
标称供电电压 (Vsup):2.5 V表面贴装:NO
技术:CMOS温度等级:INDUSTRIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:THROUGH-HOLE
端子节距:2.54 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:7.62 mm
最长写入周期时间 (tWC):10 ms写保护:HARDWARE
Base Number Matches:1

IS24C02B-2PI 数据手册

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®
IS24C01B IS24C02B  
ISSI  
1K-bit/2K-bit  
2-WIRE SERIAL CMOS EEPROM  
APRIL2006  
FEATURES  
DESCRIPTION  
• Two-Wire Serial Interface, I2CTM compatible  
–Bi-directional data transfer protocol  
• Wide Voltage Operation  
The IS24C01B and IS24C02B are electrically  
erasable PROM devices that use the standard 2-  
wire interface for communications. The IS24C01B  
and IS24C02B contain a memory array of 1K-bits  
(128 x 8) and 2K-bits (256 x 8), respectively. Each  
device is organized into 8 byte pages for page  
write mode.  
–Vcc = 1.8V to 5.5V  
• 400 KHz (2.5V) and 1 MHz (5.0V) compatibility  
• Low Power CMOS Technology  
–Standby Current less than 6 µA (5.0V)  
–Read Current less than 2 mA (5.0V)  
–Write Current less than 3 mA (5.0V)  
• Hardware Data Protection  
–Write Protect Pin  
This EEPROM operates in a wide voltage range of  
1.8V to 5.5V to be compatible with most application  
voltages. ISSI designed this device family to be a  
practical, low-power 2-wire EEPROM solution.  
The devices are available in 8-pin PDIP, 8-pin  
SOIC, 8-pad DFN, and 8-pin TSSOP packages.  
• Sequential Read Feature  
• Filtered Inputs for Noise Suppression  
• Self time write cycle with auto clear  
5 ms max. @ 2.5V  
The IS24C01B/02B maintains compatibility with  
the popular 2-wire bus protocol, so it is easy to  
use in applications implementing this bus type.  
The simple bus consists of the Serial Clock wire  
(SCL) and the Serial Data wire (SDA). Using the  
bus, a Master device such as a microcontroller is  
usually connected to one or more Slave devices  
such as this device. The bit stream over the SDA  
line includes a series of bytes, which identifies a  
particular Slave device, an instruction, an address  
within that Slave device, and a series of data, if  
appropriate. The IS24C01B/02B has a  
• Organization:  
–IS24C01B128x8 (128 bytes)  
–IS24C02B256x8 (256 bytes)  
• 8 Byte Page Write Buffer  
• High Reliability  
–Endurance: 1,000,000 Cycles  
–Data Retention: 100 Years  
• Industrial and Automotive temperature ranges  
• 8-pin PDIP, 8-pin SOIC, 8-pad DFN, and 8-pin  
TSSOP packages  
Write Protect pin (WP) to allow blocking of any  
write instruction transmitted over the bus.  
• Lead-free available  
Copyright © 2006 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time  
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to  
obtain the latest version of this device specification before relying on any published information and before placing orders for products.  
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774  
1
Rev. A  
04/12/06  

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