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IS24C01-3P PDF预览

IS24C01-3P

更新时间: 2024-11-12 22:48:03
品牌 Logo 应用领域
美国芯成 - ISSI 存储内存集成电路光电二极管双倍数据速率可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟
页数 文件大小 规格书
16页 58K
描述
1K-bit/2K-bit/4K-bit/8K-bit/16K-bit 2-WIRE SERIAL CMOS EEPROM

IS24C01-3P 技术参数

是否Rohs认证:不符合生命周期:Obsolete
零件包装代码:DIP包装说明:DIP, DIP8,.3
针数:8Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8542.32.00.51
风险等级:5.86Is Samacsys:N
其他特性:2 WIRE SERIAL INTERFACE; HARDWARE WRITE PROTECTION; 100K ENDURANCE CYCLES最大时钟频率 (fCLK):0.4 MHz
数据保留时间-最小值:100耐久性:1000000 Write/Erase Cycles
I2C控制字节:1010DDDRJESD-30 代码:R-PDIP-T8
JESD-609代码:e0长度:9.325 mm
内存密度:1024 bit内存集成电路类型:EEPROM
内存宽度:8功能数量:1
端子数量:8字数:128 words
字数代码:128工作模式:SYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:128X8封装主体材料:PLASTIC/EPOXY
封装代码:DIP封装等效代码:DIP8,.3
封装形状:RECTANGULAR封装形式:IN-LINE
并行/串行:SERIAL峰值回流温度(摄氏度):NOT SPECIFIED
电源:3/5 V认证状态:Not Qualified
座面最大高度:4.57 mm串行总线类型:I2C
最大待机电流:0.000004 A子类别:EEPROMs
最大压摆率:0.003 mA最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):2.5 V标称供电电压 (Vsup):5 V
表面贴装:NO技术:CMOS
温度等级:COMMERCIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:THROUGH-HOLE端子节距:2.54 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:7.62 mm最长写入周期时间 (tWC):5 ms
写保护:HARDWAREBase Number Matches:1

IS24C01-3P 数据手册

 浏览型号IS24C01-3P的Datasheet PDF文件第2页浏览型号IS24C01-3P的Datasheet PDF文件第3页浏览型号IS24C01-3P的Datasheet PDF文件第4页浏览型号IS24C01-3P的Datasheet PDF文件第5页浏览型号IS24C01-3P的Datasheet PDF文件第6页浏览型号IS24C01-3P的Datasheet PDF文件第7页 
®
IS24C01 IS24C02  
IS24C04 IS24C08 IS24C16  
ISSI  
1K-bit/2K-bit/4K-bit/8K-bit/16K-bit  
2-WIRE SERIAL CMOS EEPROM  
APRIL 2002  
FEATURES  
DESCRIPTION  
• Low Power CMOS Technology  
–Standby Current less than 8 µA (5.5V)  
–Read Current (typical) less than 1 mA (5.5V)  
–Write Current (typical) less than 3 mA (5.5V)  
• Flexible Voltage Operation  
The IS24CXX (refers to IS24C01, IS24C02, IS24C04,  
IS24C08, IS24C16) family is a low-cost and low voltage 2-  
wireSerialEEPROM. ItisfabricatedusingISSI’sadvanced  
CMOSEEPROMtechnologyandprovidesalowpowerand  
lowvoltageoperation.TheIS24CXXfamilyfeaturesawrite  
protection feature, and is available in 8-pin DIP and 8-pin  
SOIC packages.  
–Vcc = 1.8V to 5.5V for –2 version  
–Vcc = 2.5V to 5.5V for –3 version  
• 400 KHz (I2C Protocol) Compatibility  
The IS24C01 is a 1K-bit EEPROM; IS24C02 is a 2K-bit  
EEPROM;IS24C04isa4K-bitEEPROM;IS24C08isa8K-  
bit EEPROM; IS24C16 is a 16K-bit EEPROM.  
• Hardware Data Protection  
–Write Protect Pin  
The IS24C01 and IS24C02 are available in 8-pin MSOP  
package. TheIS24C01,IS24C02,IS24C04,andIS24C08  
are available in 8-Pin TSSOP package.  
• Sequential Read Feature  
• Filtered Inputs for Noise Suppression  
• 8-pin PDIP and 8-pin SOIC packages  
• 8-pin TSSOP (1K,2K, 4K & 8K only)  
• 8-pin MSOP (1K,2K only)  
Automotive data is preliminary.  
• Self time write cycle with auto clear  
5 ms @ 2.5V  
• Organization:  
–IS24C01 128x8 (one block of 128 bytes)  
–IS24C02 256x8 (one block of 256 bytes)  
–IS24C04 512x8 (two blocks of 256 bytes)  
–IS24C08 1024x8 (four blocks of 256 bytes)  
–IS24C16 2048x8 (eight blocks of 256 bytes)  
• Page Write Buffer  
• Two-Wire Serial Interface  
–Bi-directional data transfer protocol  
• High Reliability  
–Endurance: 1,000,000 Cycles  
–Data Retention: 100 Years  
• Commercial, Industrial and Automotive tempera-  
ture ranges  
Copyright © 2002 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time  
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to  
obtain the latest version of this device specification before relying on any published information and before placing orders for products.  
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774  
Rev. D  
1
06/25/02  

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