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IS23SC1604-X2 PDF预览

IS23SC1604-X2

更新时间： 2024-12-01 03:00:03
品牌 Logo 应用领域
美国芯成 - ISSI 存储内存集成电路可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟
页数 文件大小 规格书
18页 78K
描述
16-KBIT SECURED SERIAL EEPROM

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中文翻译

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IS23SC1604-X2 技术参数

是否无铅： 含铅是否Rohs认证： 不符合
生命周期：Obsolete零件包装代码：WAFER
包装说明：DIE,Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8542.32.00.51
风险等级：5.88Is Samacsys：N
最大时钟频率 (fCLK)：0.3 MHzJESD-30 代码：R-XUUC-N7
JESD-609代码：e0内存密度：16384 bit
内存集成电路类型：EEPROM内存宽度：8
功能数量：1端子数量：7
字数：2048 words字数代码：2000
工作模式：SYNCHRONOUS最高工作温度：70 °C
最低工作温度：组织：2KX8
封装主体材料：UNSPECIFIED封装代码：DIE
封装形状：RECTANGULAR封装形式：UNCASED CHIP
并行/串行：SERIAL峰值回流温度（摄氏度）：240
认证状态：Not Qualified串行总线类型：3-WIRE
最大供电电压 (Vsup)：5.5 V最小供电电压 (Vsup)：4.5 V
标称供电电压 (Vsup)：5 V表面贴装：YES
技术：CMOS温度等级：COMMERCIAL
端子面层：TIN LEAD端子形式：NO LEAD
端子位置：UPPER处于峰值回流温度下的最长时间：30
最长写入周期时间 (tWC)：5 msBase Number Matches：1

IS23SC1604-X2 数据手册

 浏览型号IS23SC1604-X2的Datasheet PDF文件第2页浏览型号IS23SC1604-X2的Datasheet PDF文件第3页浏览型号IS23SC1604-X2的Datasheet PDF文件第4页浏览型号IS23SC1604-X2的Datasheet PDF文件第5页浏览型号IS23SC1604-X2的Datasheet PDF文件第6页浏览型号IS23SC1604-X2的Datasheet PDF文件第7页 
®
IS23SC1604  
ISSI  
ADVANCE INFORMATION  
APRIL 2003  
16-KBIT SECURED SERIAL EEPROM  
FEATURES  
DESCRIPTION  
IS23SC1604 is a low-cost, low-power, highly secured  
16K bits (2K x 8) serial EEPROM. It is fabricated using  
ISSI’s advanced CMOS technology.  
• 16K serial EEPROM with security features  
• Comply with ISO/IEC Standard 7816-3  
Synchronous Protocol  
The security features of IS23SC1604 provide high levels  
of memory security protection for smart card applications.  
The memory is partitioned into four application zones.  
Each individual application zone is protected by multiple  
security codes from unauthorized read/write/erase  
access to the zone. In addition, an internal security fuse  
is available for the card issuer to fully personalize the  
device before releasing it to customer.  
• Store and validate security codes  
• Four protected application zones  
• Provide transport code security  
• Single 5V power supply for read/write/erase  
operations  
• Low power operation:  
The device also features an internal high-voltage charge  
pump for memory programming, 1,000,000 write/erase  
cycles and ten years of data retention.  
— 15 µA (max.) standby current  
— 3 mA (max.) read current at 300 KHz  
— 4 mA (max.) write/erase current  
• 2 ms read access time at 300 KHz;  
5 ms write cycle time  
• 300 KHz serial clock rate  
• High ESD protection: > 4 KV  
• High reliability:  
— 1,000,000 erase/write cycles  
— 10 years data retention  
Pin Configuration: 8-pin Plastic DIP  
• Standard CMOS Process  
• Wide operating temperature range  
Vcc  
RST  
CLK  
FUS  
C1  
C2  
C3  
C4  
C5  
C6  
C7  
C8  
GND  
NC  
—
0°C to +70°C Commercial; –40°C to +85°C  
Industrial  
• Data access only after validation of security  
code  
I/O  
PGM  
• Permanent invalidation of device upon eight  
consecutive failed attempts to enter the correct  
security code  
• Separate read/write/erase access protections  
for each application zone  
• Allow the memory chip to be personalized if the  
internal security fuse is not blown. If the internal  
security fuse is blown, maximum security protection  
of the memory will always be enabled.  
Copyright © 2003 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability  
arisingoutoftheapplicationoruseofanyinformation, productsorservicesdescribedherein. Customersareadvisedtoobtainthelatestversionofthisdevicespecificationbeforerelyingonany  
publishedinformationandbeforeplacingordersforproducts.  
Integrated Silicon Solution, Inc. — 1-800-379-4774  
ADVANCE INFORMATION Rev. 00E  
1
04/10/03  
1234567...18

中文翻译

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