Datasheet > 存储 > EEPROM> IS23SC1604-PI

IS23SC1604-PI

更新时间： 2024-02-09 13:09:15

品牌	Logo	应用领域
美国芯成 - ISSI		存储内存集成电路光电二极管可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟
页数	文件大小	规格书
18页	78K
描述
16-KBIT SECURED SERIAL EEPROM

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IS23SC1604-PI 技术参数

是否无铅：	含铅	是否Rohs认证：	不符合
生命周期：	Obsolete	零件包装代码：	DIP
包装说明：	DIP,	针数：	8
Reach Compliance Code：	compliant	ECCN代码：	EAR99
HTS代码：	8542.32.00.51	风险等级：	5.88
Is Samacsys：	N	其他特性：	1000000 ERASE/WRITE CYCLES; 10 YEARS DATA RETENTION
最大时钟频率 (fCLK)：	0.3 MHz	数据保留时间-最小值：	10
JESD-30 代码：	R-PDIP-T8	JESD-609代码：	e0
长度：	9.3218 mm	内存密度：	16384 bit
内存集成电路类型：	EEPROM	内存宽度：	8
湿度敏感等级：	3	功能数量：	1
端子数量：	8	字数：	2048 words
字数代码：	2000	工作模式：	SYNCHRONOUS
最高工作温度：	85 °C	最低工作温度：	-40 °C
组织：	2KX8	封装主体材料：	PLASTIC/EPOXY
封装代码：	DIP	封装形状：	RECTANGULAR
封装形式：	IN-LINE	并行/串行：	SERIAL
峰值回流温度（摄氏度）：	NOT SPECIFIED	认证状态：	Not Qualified
座面最大高度：	4.572 mm	串行总线类型：	3-WIRE
最大供电电压 (Vsup)：	5.5 V	最小供电电压 (Vsup)：	4.5 V
标称供电电压 (Vsup)：	5 V	表面贴装：	NO
技术：	CMOS	温度等级：	INDUSTRIAL
端子面层：	Tin/Lead (Sn/Pb)	端子形式：	THROUGH-HOLE
端子节距：	2.54 mm	端子位置：	DUAL
处于峰值回流温度下的最长时间：	NOT SPECIFIED	宽度：	7.62 mm
Base Number Matches：	1

IS23SC1604-PI 数据手册

IS23SC1604

ISSI

ADVANCE INFORMATION

APRIL 2003

16-KBIT SECURED SERIAL EEPROM

FEATURES

DESCRIPTION

IS23SC1604 is a low-cost, low-power, highly secured

16K bits (2K x 8) serial EEPROM. It is fabricated using

ISSI’s advanced CMOS technology.

• 16K serial EEPROM with security features

• Comply with ISO/IEC Standard 7816-3

Synchronous Protocol

The security features of IS23SC1604 provide high levels

of memory security protection for smart card applications.

The memory is partitioned into four application zones.

Each individual application zone is protected by multiple

security codes from unauthorized read/write/erase

access to the zone. In addition, an internal security fuse

is available for the card issuer to fully personalize the

device before releasing it to customer.

• Store and validate security codes

• Four protected application zones

• Provide transport code security

• Single 5V power supply for read/write/erase

operations

• Low power operation:

The device also features an internal high-voltage charge

pump for memory programming, 1,000,000 write/erase

cycles and ten years of data retention.

— 15 µA (max.) standby current

— 3 mA (max.) read current at 300 KHz

— 4 mA (max.) write/erase current

• 2 ms read access time at 300 KHz;

5 ms write cycle time

• 300 KHz serial clock rate

• High ESD protection: > 4 KV

• High reliability:

— 1,000,000 erase/write cycles

— 10 years data retention

Pin Configuration: 8-pin Plastic DIP

• Standard CMOS Process

• Wide operating temperature range

Vcc

RST

CLK

FUS

GND

—

0°C to +70°C Commercial; –40°C to +85°C

Industrial

• Data access only after validation of security

code

I/O

PGM

• Permanent invalidation of device upon eight

consecutive failed attempts to enter the correct

security code

• Separate read/write/erase access protections

for each application zone

• Allow the memory chip to be personalized if the

internal security fuse is not blown. If the internal

security fuse is blown, maximum security protection

of the memory will always be enabled.

Copyright © 2003 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability

arisingoutoftheapplicationoruseofanyinformation, productsorservicesdescribedherein. Customersareadvisedtoobtainthelatestversionofthisdevicespecificationbeforerelyingonany

publishedinformationandbeforeplacingordersforproducts.

Integrated Silicon Solution, Inc. — 1-800-379-4774

ADVANCE INFORMATION Rev. 00E

04/10/03

12 3 4 5 6 7...18

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IS23SC1604-X2	ISSI	16-KBIT SECURED SERIAL EEPROM	获取价格
IS23SC1604-X2I	ISSI	16-KBIT SECURED SERIAL EEPROM	获取价格
IS23SC1604-X3	ISSI	16-KBIT SECURED SERIAL EEPROM	获取价格
IS23SC1604-X3I	ISSI	16-KBIT SECURED SERIAL EEPROM	获取价格
IS23SC1604-X4	ISSI	16-KBIT SECURED SERIAL EEPROM	获取价格
IS23SC1604-X4I	ISSI	16-KBIT SECURED SERIAL EEPROM	获取价格

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