DATASHEET
IS-1845ASRH, IS-1845ASEH
Single Event Radiation Hardened High Speed, Current Mode PWM
FN9001
Rev.7.01
Feb 16, 2022
The IS-1845ASRH, IS-1845ASEH are designed to be used in
Features
switching power supplies operating in current-mode. Every
other rising edge of the on-chip oscillator turns on the output.
Turn-off is controlled by the current sense comparator and
occurs when the sensed current reaches a peak controlled by
the error amplifier. Turn-off can also be triggered by the end of
the oscillator period. These devices feature a single output
operating from zero to less than 50% duty cycle.
• Electrically Screened to DSCC SMD # 5962-01509
• QML Qualified per MIL-PRF-38535 Requirements
• Radiation acceptance testing - IS-1845ASRH
- High Dose Rate . . . . . . . . . . . . . . . . . . . . 300krad(SI) (Max)
• Radiation acceptance testing - IS-1845ASEH
- High Dose Rate . . . . . . . . . . . . . . . . . . . . 300krad(SI) (Max)
- Low Dose Rate . . . . . . . . . . . . . . . . . . . . . . 50krad(SI) (Max)
• SEE hardness (see SEE report for details)
Constructed with Renesas Rad Hard Silicon Gate (RSG)
dielectrically isolated BiCMOS process, these devices are
immune to single event latch-up and have been specifically
designed to provide a high level of immunity to single event
transients. All specified parameters are ensured and tested for
300krad(Si) total dose performance at a high dose rate and
50krad(Si) total dose at a low dose rate.
- SEL Immune . . . . . . . . . . . . . . . . . . . . Dielectrically Isolated
2
- SEU Immune. . . . . . . . . . . . . . . . . . . . . . . . 35MeV/mg/cm
2
-6
2
- SEU Cross-Section at 89MeV/mg/cm . . . . . . . 5x10 cm
• Low Start-up Current . . . . . . . . . . . . . . . . . . . . . . . 100µA (Typ)
• Fast Propagation Delay. . . . . . . . . . . . . . . . . . . . . . .80ns (Typ)
• Supply Voltage Range . . . . . . . . . . . . . . . . . . . . . . . 12V to 20V
• High Output Drive. . . . . . . . . . . . . . . . . . . . . . . . 1A (Peak, Typ)
• Undervoltage Lockout . . . . . 8.8V Start (Typ), 8.2V Stop (Typ)
Detailed Electrical Specifications for these devices are
contained in the SMD 5962-01509.
Applications
• Current-Mode Switching Power Supplies
• Control of High Current FET Drivers
• Motor Speed and Direction Control
Pin Configurations
IS7-1845ASRH, IS7-1845ASEH
(8 LD CDIP2-T8 SBDIP)
TOP VIEW
IS9-1845ASRH, IS9-1845ASEH
(18 LD FLATPACK)
TOP VIEW
NC
COMP
VFB
1
2
3
4
5
6
7
8
9
NC
18
17
Note 1
Note 2
COMP
VFB
1
2
3
4
8
7
6
5
VREF
VCC
OUT
GND
Note 1
VREF
VCC
VC
16
15
14
13
12
11
10
ISENSE
RTCT
NC
NC
OUT
NC
NC
ISENSE
GND
OSCGND
NC
Note 2 RTCT
NC
NOTES:
1. Grounding the COMP pin does not inhibit the output. The output may be inhibited by applying >1.2V to the ISENSE pin.
2. This part is production tested with C = 3.3nF and R = 10k timing components only.
t
t
FN9001 Rev.7.01
Feb 16, 2022
Page 1 of 4
© 2003 Renesas Electronics
5秒后页面跳转
AO3401场效应管参数、引脚图、应用原理图
BT131可控硅参数及引脚图、工作原理详解
74LS32芯片参数、引脚图及功能真值表
全球首块英伟达H200交付 黄仁勋“送货上门”
微信公众号
抖音公众号
浙公网安备 33010502006866号 浙ICP备10014259号-119
营业执照ICP证
数据手册
如果您发现信息不准确，
