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IRS21851STRPBF PDF预览

IRS21851STRPBF

更新时间: 2024-11-24 03:44:31
品牌 Logo 应用领域
英飞凌 - INFINEON 外围驱动器驱动程序和接口接口集成电路光电二极管
页数 文件大小 规格书
16页 397K
描述
SINGLE HIGH SIDE DRIVER IC

IRS21851STRPBF 技术参数

是否Rohs认证:符合生命周期:Obsolete
包装说明:ROHS COMPLIANT, PLASTIC, MS-012AA, SOIC-8Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.39.00.01
风险等级:5.68Is Samacsys:N
内置保护:TRANSIENT; UNDER VOLTAGE接口集成电路类型:BUFFER OR INVERTER BASED PERIPHERAL DRIVER
JESD-30 代码:R-PDSO-G8长度:4.9 mm
湿度敏感等级:2功能数量:1
端子数量:8最高工作温度:125 °C
最低工作温度:-40 °C输出电流流向:SOURCE
标称输出峰值电流:4 A封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified座面最大高度:1.75 mm
最大供电电压:20 V最小供电电压:10 V
标称供电电压:15 V表面贴装:YES
技术:CMOS温度等级:AUTOMOTIVE
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
断开时间:0.21 µs接通时间:0.21 µs
宽度:3.9 mmBase Number Matches:1

IRS21851STRPBF 数据手册

 浏览型号IRS21851STRPBF的Datasheet PDF文件第2页浏览型号IRS21851STRPBF的Datasheet PDF文件第3页浏览型号IRS21851STRPBF的Datasheet PDF文件第4页浏览型号IRS21851STRPBF的Datasheet PDF文件第5页浏览型号IRS21851STRPBF的Datasheet PDF文件第6页浏览型号IRS21851STRPBF的Datasheet PDF文件第7页 
Data Sheet No. PD60255  
IRS21851SPbF  
SINGLE HIGH SIDE DRIVER IC  
Features  
Product Summary  
· Gate drive supply range from 10 V to 20 V  
· Undervoltage lockout for VBS and V CC  
· 3.3 V and 5 V input logic compatible  
· Tolerant to negative transient voltage  
V
600 V max.  
4 A / 4 A  
OFFSET  
I +/-  
O
·
Matched propagation delays for all channels  
RoHS compliant  
V
10 V - 20 V  
170 ns & 170 ns  
OUT  
Description  
t
(typ.)  
on/off  
The IRS21851 is a high voltage, high speed power  
MOSFET and IGBT single high-side driver with propa-  
gation delay matched output channels. Proprietary  
HVIC and latch immune CMOS technologies enable  
ruggedized monolithic construction. The floating logic  
input is compatible with standard CMOS or LSTTL  
output, down to 3.3 V logic and can be operated up to  
600 V above the ground. The output driver features a  
high pulse current buffer stage designed for mini-  
mum driver cross-conduction. The floating channel  
can be used to drive an N-channel power MOSFET  
or IGBT in the high-side configuration, which oper-  
ates up to 600 V.  
Package  
8-Lead SOIC  
IRS21851  
Typical Connection  
up to 600V  
VCC  
VCC  
IN  
VB  
HO  
VS  
IN  
TO  
LOAD  
COM  
(Refer to Lead Assignments for correct pin configuration). This diagram shows electrical connections only.  
Please refer to our Application Notes and DesignTips for proper circuit board layout.  
www.irf.com  
1

IRS21851STRPBF 替代型号

型号 品牌 替代类型 描述 数据表
IRS21851SPBF INFINEON

完全替代

SINGLE HIGH SIDE DRIVER IC

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