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IRS2133STRPBF

更新时间: 2024-10-14 03:44:31
品牌 Logo 应用领域
英飞凌 - INFINEON 外围驱动器驱动程序和接口接口集成电路光电二极管
页数 文件大小 规格书
20页 506K
描述
3-PHASE BRIDGE DRIVER

IRS2133STRPBF 数据手册

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PRELIMINARY  
Data Sheet No. PD60275 revA  
IRS2133/IRS2135 (J&S)PbF  
3-PHASE BRIDGE DRIVER  
Features  
Product Summary  
Floating channel designed for bootstrap operation  
Fully operational to +600 V  
Tolerant to negative transient voltage, dV/dt immune  
Gate drive supply range from 10 V /12 V to 20 V DC  
and up to 25 V for transient  
Undervoltage lockout for all channels  
Over-current shutdown turns off all six drivers  
Three Independent half-bridge drivers  
Matched propagation delay for all channels  
2.5 V logic compatible  
VOFFSET  
600 V max.  
IO+/- (min.)  
VOUT  
200 mA / 420 mA  
10 V – 20 V or 12 – 20 V  
500 ns  
ton/off (typ.)  
Deadtime (typ.)  
230 ns  
Outputs out of phase with inputs  
All parts are LEAD-FREE  
Applications:  
*Motor Control  
*Air Conditioners/ Washing Machines  
*General Purpose Inverters  
*Micro/Mini Inverter Drives  
Description  
Packages  
The IRS213(3, 5) are high voltage, high speed  
power MOSFET and IGBT drivers with three independent high  
and low side referenced output channels for 3-phase  
applications. Proprietary HVIC technology enables ruggedized  
monolithic construction. Logic inputs are compatible with  
CMOS or LSTTL outputs, down to 2.5 V logic. An independent  
operational amplifier provides analog feedback of bridge  
current via an external current sense resistor. A current  
trip function which terminates all six outputs can also derived  
from this resistor. A shutdown function is available to terminate  
all six outputs. An open drain FAULT signal is provided to  
indicate that an over-current or undervoltage shutdown has  
occurred. Fault conditions are cleared with the FLT-CLR lead.  
The output drivers feature a high pulse current buffer stage  
designed for minimum driver cross-conduction. Propagation  
28-Lead SOIC  
28-Lead PDIP  
44-Lead PLCC w/o 12 Leads  
delays are matched to simplify use in high frequencies applications. The floating channels can be used to drive  
N-channel power MOSFETs or IGBTs in the high side configuration which operates up to 600 V.  
Typical Connection  
www.irf.com  
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