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IRS2113STR PDF预览

IRS2113STR

更新时间: 2024-10-15 17:15:35
品牌 Logo 应用领域
友台半导体 - UMW 栅极驱动
页数 文件大小 规格书
9页 1063K
描述
栅极驱动IC

IRS2113STR 数据手册

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R
UMW  
IRS2113  
700V 4A Half Bridge MOSFET/IGBT Gate Driver  
Description  
Application  
The IRS2113STR is a high voltage, high speed  
UPS Universal inverter  
power MOSFET drivers with dependent high- and  
low-side referenced output channels. Proprietary  
HVIC and latch immune CMOS technologies enable  
ruggedized monolithic construction. The logic input is  
compatible with standard CMOS or LSTTL output,  
down to 3.3 V logic. The output drivers feature a high  
pulse current buffer stage designed for minimum  
driver cross-conduction. The floating channel can be  
used to drive an N-channel power MOSFET in  
the high-side configuration which operates up to 700 V.  
Half-bridge and full-bridge converters in AC and  
DC power supplies  
High-density switching power supplies for  
servers, telecommunications, IT and industrial  
infrastructure  
Solar inverter and motor driver  
Functional Block Diagram  
Features and Benefits  
Floating channel designed for bootstrap  
operation  
Fully operational to +700 V  
3.3V, 5V and 15V input logic compatible  
Tolerant to negative transient voltage  
dV/dt immune  
Allowable negative Vs capability: -9V  
Gate drive supply range from 10V to 20V  
Separate logic supply range from 3.3V to 20V  
Logic and power ground ±5V offset  
Undervoltage lockout for both channels  
Cycle by cycle edge-triggered shutdown logic  
Matched propagation delay for both channels  
Wide operating temperature range -40°C ~125°C  
Typically output Source/Sink current capability:  
4A/4A  
www.umw-ic.com  
UTD Semiconductor Co.,Limited  
1

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