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IRS2113-1PBF PDF预览

IRS2113-1PBF

更新时间: 2024-11-18 03:44:31
品牌 Logo 应用领域
英飞凌 - INFINEON 外围驱动器驱动程序和接口接口集成电路光电二极管
页数 文件大小 规格书
19页 493K
描述
HIGH AND LOW SIDE DRIVER

IRS2113-1PBF 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:DIP, DIP13/14,.3Reach Compliance Code:compliant
风险等级:5.3内置保护:TRANSIENT; UNDER VOLTAGE
接口集成电路类型:BUFFER OR INVERTER BASED PERIPHERAL DRIVERJESD-30 代码:R-PDIP-T13
JESD-609代码:e3长度:19.305 mm
功能数量:1端子数量:13
最高工作温度:125 °C最低工作温度:-40 °C
输出电流流向:SOURCE AND SINK封装主体材料:PLASTIC/EPOXY
封装代码:DIP封装等效代码:DIP13/14,.3
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):250电源:15 V
认证状态:Not Qualified座面最大高度:5.33 mm
子类别:MOSFET Drivers最大供电电压:20 V
最小供电电压:10 V标称供电电压:15 V
表面贴装:NO技术:CMOS
温度等级:AUTOMOTIVE端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子节距:2.54 mm
端子位置:DUAL处于峰值回流温度下的最长时间:30
断开时间:0.15 µs接通时间:0.16 µs
宽度:7.62 mmBase Number Matches:1

IRS2113-1PBF 数据手册

 浏览型号IRS2113-1PBF的Datasheet PDF文件第2页浏览型号IRS2113-1PBF的Datasheet PDF文件第3页浏览型号IRS2113-1PBF的Datasheet PDF文件第4页浏览型号IRS2113-1PBF的Datasheet PDF文件第5页浏览型号IRS2113-1PBF的Datasheet PDF文件第6页浏览型号IRS2113-1PBF的Datasheet PDF文件第7页 
Data Sheet No. PD60249 revB  
PRELIMINARY  
IRS2110(-1,-2,S)PbF  
IRS2113(-1,-2,S)PbF  
HIGH AND LOW SIDE DRIVER  
Features  
Product Summary  
Floating channel designed for bootstrap operation  
Fully operational to +500 V or +600 V  
Tolerant to negative transient voltage, dV/dt immune  
Gate drive supply range from 10 V to 20 V  
Undervoltage lockout for both channels  
3.3 V logic compatible  
V
(IRS2110)  
500 V max.  
600 V max.  
OFFSET  
(IRS2113)  
I
O+/-  
2 A/2 A  
10 V - 20 V  
V
OUT  
Separate logic supply range from 3.3 V to 20 V  
Logic and power ground 5V offset  
t
(typ.)  
130 ns & 120 ns  
on/off  
CMOS Schmitt-triggered inputs with pull-down  
Cycle by cycle edge-triggered shutdown logic  
Matched propagation delay for both channels  
Outputs in phase with inputs  
Delay Matching (IRS2110) 10 ns max.  
(IRS2113) 20 ns max.  
Packages  
Description  
The IRS2110/IRS2113 are high voltage, high speed  
power MOSFET and IGBT drivers with independent  
high and low side referenced output channels. Pro-  
prietary HVIC and latch immune CMOS technologies  
enable ruggedized monolithic construction. Logic in-  
puts are compatible with standard CMOS or LSTTL  
output, down to 3.3 V logic. The output drivers feature  
a high pulse current buffer stage designed for mini-  
mum driver cross-conduction. Propagation delays are  
matched to simplify use in high frequency applications.  
The floating channel can be used to drive an N-chan-  
nel power MOSFET or IGBT in the high side configura-  
tion which operates up to 500 V or 600 V.  
16-Lead PDIP  
14-Lead PDIP  
(w/o leads 4 & 5)  
IRS2110 and IRS2113  
IRS2110-2 and IRS2113-2  
16-Lead SOIC  
14-Lead PDIP  
IRS2110S and  
(w/o lead 4)  
IRS2113S  
IRS2110-1 and IRS2113-1  
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Typical Connection  
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(Refer to Lead Assignments for correct pin configuration). This diagram shows electrical connec-  
tions only. Please refer to our Application Notes and DesignTips for proper circuit board layout.  
www.irf.com  
1

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