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IRS2112-1PBF PDF预览

IRS2112-1PBF

更新时间: 2024-11-06 03:44:31
品牌 Logo 应用领域
英飞凌 - INFINEON 驱动器
页数 文件大小 规格书
19页 600K
描述
HIGH AND LOW SIDE DRIVER

IRS2112-1PBF 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:ROHS COMPLIANT, PLASTIC, MS-001AA, DIP-14Reach Compliance Code:compliant
风险等级:5.28内置保护:TRANSIENT; UNDER VOLTAGE
接口集成电路类型:BUFFER OR INVERTER BASED PERIPHERAL DRIVERJESD-30 代码:R-PDIP-T14
JESD-609代码:e3长度:19.305 mm
功能数量:1端子数量:14
最高工作温度:125 °C最低工作温度:-40 °C
输出电流流向:SOURCE AND SINK封装主体材料:PLASTIC/EPOXY
封装代码:DIP封装等效代码:DIP14,.3
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):250电源:15 V
认证状态:Not Qualified座面最大高度:5.33 mm
子类别:MOSFET Drivers最大供电电压:20 V
最小供电电压:10 V标称供电电压:15 V
表面贴装:NO技术:CMOS
温度等级:AUTOMOTIVE端子面层:MATTE TIN
端子形式:THROUGH-HOLE端子节距:2.54 mm
端子位置:DUAL处于峰值回流温度下的最长时间:30
断开时间:0.16 µs接通时间:0.18 µs
宽度:7.62 mmBase Number Matches:1

IRS2112-1PBF 数据手册

 浏览型号IRS2112-1PBF的Datasheet PDF文件第2页浏览型号IRS2112-1PBF的Datasheet PDF文件第3页浏览型号IRS2112-1PBF的Datasheet PDF文件第4页浏览型号IRS2112-1PBF的Datasheet PDF文件第5页浏览型号IRS2112-1PBF的Datasheet PDF文件第6页浏览型号IRS2112-1PBF的Datasheet PDF文件第7页 
Data Sheet No. PD60251  
(
)
IRS2112 -1,-2,S PbF  
HIGH AND LOW SIDE DRIVER  
Features  
Product Summary  
· Floating channel designed for bootstrap operation  
· Fully operational to +600 V  
V
600 V max.  
200 mA / 440 mA  
10 V - 20 V  
OFFSET  
· Tolerant to negative transient voltage, dV/dt  
immune  
I +/-  
O
· Gate drive supply range from 10 V to 20 V  
· Undervoltage lockout for both channels  
· 3.3 V logic compatible  
V
OUT  
· Separate logic supply range from 3.3 V to 20 V  
· Logic and power ground +/- 5 V offset  
· CMOS Schmitt-triggered inputs with pull-down  
· Cycle by cycle edge-triggered shutdown logic  
· Matched propagation delay for both channels  
· Outputs in phase with inputs  
t
(typ.)  
135 ns & 105 ns  
30 ns  
on/off  
Delay Matching  
Packages  
RoHS compliant  
14-Lead PDIP  
IRS2112  
Description  
The IRS2112 is a high voltage, high speed power  
16-Lead PDIP  
M
OSFET and IGBT driver with independent high- and  
(w/o leads 4 & 5)  
IRS2112-2  
low-side referenced output channels. Proprietary HVIC  
and latch immune CMOS technologies enable rug-  
gedized monolithic construction. Logic inputs are com-  
patible with standard CMOS or LSTTL outputs, down  
to 3.3 V logic. The output drivers feature a high pulse  
current buffer stage designed for minimum driver  
cross-conduction. Propagation delays are matched  
to simplify use in high frequency applications. The  
14-Lead PDIP  
(w/o lead 4)  
IRS2112-1  
16-Lead SOIC  
IRS2112S  
floating channel can be used to drive an N-channel power MOSFET or IGBT in the high-side configuration  
which operates up to 600 V.  
up to 600 V  
Typical Connection  
HO  
VDD  
HIN  
SD  
VB  
VS  
VDD  
HIN  
SD  
TO  
LOAD  
LIN  
VSS  
VCC  
COM  
LO  
LIN  
VSS  
VCC  
(Refer to Lead Assignments for correct pin configuration). This diagram shows electrical connections only. Please  
refer to our Application Notes and DesignTips for proper circuit board layout.  
www.irf.com  
1

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