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IRS2111SPBF PDF预览

IRS2111SPBF

更新时间: 2024-11-18 03:44:31
品牌 Logo 应用领域
英飞凌 - INFINEON 驱动器
页数 文件大小 规格书
16页 331K
描述
HALF-BRIDGE DRIVER

IRS2111SPBF 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:SOP, SOP8,.25Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.39.00.01
风险等级:1.39内置保护:TRANSIENT; UNDER VOLTAGE
接口集成电路类型:HALF BRIDGE BASED PERIPHERAL DRIVERJESD-30 代码:R-PDSO-G8
JESD-609代码:e3长度:4.9 mm
湿度敏感等级:2功能数量:1
端子数量:8最高工作温度:125 °C
最低工作温度:-40 °C输出电流流向:SOURCE AND SINK
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装等效代码:SOP8,.25封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
电源:15 V认证状态:Not Qualified
座面最大高度:1.75 mm子类别:MOSFET Drivers
最大供电电压:20 V最小供电电压:10 V
标称供电电压:15 V表面贴装:YES
技术:CMOS温度等级:AUTOMOTIVE
端子面层:Matte Tin (Sn) - with Nickel (Ni) barrier端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED断开时间:0.18 µs
接通时间:0.95 µs宽度:3.9 mm
Base Number Matches:1

IRS2111SPBF 数据手册

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Data Sheet No. PD60253  
(
)
IRS2111 S PbF  
HALF-BRIDGE DRIVER  
Features  
Product Summary  
Floating channel designed for bootstrap operation  
V
600 V max.  
200 mA / 420 mA  
10 V - 20 V  
OFFSET  
Fully operational to +600 V  
Tolerant to negative transient voltage, dV/dt  
immune  
I +/-  
O
Gate drive supply range from 10 V to 20 V  
Undervoltage lockout for both channels  
CMOS Schmitt-triggered inputs with pull-down  
Matched propagation delay for both channels  
Internally set deadtime  
V
OUT  
t
(typ.)  
750 ns & 150 ns  
650 ns  
on/off  
High side output in phase with input  
Deadtime (typ.)  
Description  
Packages  
The IRS2111 is a high voltage, high speed power MOSFET and  
IGBT driver with dependent high and low side referenced out-  
put channels designed for half-bridge applications. Proprietary  
HVIC and latch immune CMOS technologies enable ruggedized  
monolithic construction. Logic input is compatible with standard  
CMOS outputs. The output drivers feature a high pulse current  
buffer stage designed for minimum driver cross-conduction. In-  
ternal deadtime is provided to avoid shoot-through in the output  
half-bridge. The floating channel can be used to drive an N-  
channel power MOSFET or IGBT in the high side configuration  
which operates up to 600 V.  
8-Lead PDIP  
IRS2111PbF  
8-Lead SOIC  
IRS21111SPbF  
Typical Connection  
up to 600 V  
VCC  
VCC  
IN  
VB  
HO  
VS  
IN  
TO  
LOAD  
COM  
LO  
(Refer to Lead Assignments for correct pin configuration). This diagram shows electrical connections only. Please  
refer to our Application Notes and DesignTips for proper circuit board layout.  
www.irf.com  
1

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