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IRS2110-2 PDF预览

IRS2110-2

更新时间: 2024-02-28 05:15:05
品牌 Logo 应用领域
英飞凌 - INFINEON 驱动
页数 文件大小 规格书
19页 566K
描述
HIGH AND LOW SIDE DRIVER

IRS2110-2 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:DIP
包装说明:ROHS COMPLIANT, PLASTIC, MS-001AA, DIP-14/16针数:14
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.39.00.01风险等级:5.6
Is Samacsys:N内置保护:TRANSIENT; UNDER VOLTAGE
接口集成电路类型:BUFFER OR INVERTER BASED PERIPHERAL DRIVERJESD-30 代码:R-PDIP-T14
JESD-609代码:e3长度:20.13 mm
功能数量:1端子数量:14
最高工作温度:125 °C最低工作温度:-40 °C
输出电流流向:SOURCE AND SINK封装主体材料:PLASTIC/EPOXY
封装代码:DIP封装等效代码:DIP14/16,.3
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):260电源:15 V
认证状态:Not Qualified座面最大高度:5.33 mm
子类别:MOSFET Drivers最大供电电压:20 V
最小供电电压:10 V标称供电电压:15 V
表面贴装:NO技术:CMOS
温度等级:AUTOMOTIVE端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子节距:2.54 mm
端子位置:DUAL处于峰值回流温度下的最长时间:40
断开时间:0.15 µs接通时间:0.16 µs
宽度:7.62 mmBase Number Matches:1

IRS2110-2 数据手册

 浏览型号IRS2110-2的Datasheet PDF文件第2页浏览型号IRS2110-2的Datasheet PDF文件第3页浏览型号IRS2110-2的Datasheet PDF文件第4页浏览型号IRS2110-2的Datasheet PDF文件第5页浏览型号IRS2110-2的Datasheet PDF文件第6页浏览型号IRS2110-2的Datasheet PDF文件第7页 
Data Sheet No. PD60249  
IRS2110(-1,-2,S)PbF  
IRS2113(-1,-2,S)PbF  
HIGHAND LOW SIDE DRIVER  
Features  
Product Summary  
· Floating channel designed for bootstrap operation  
· Fully operational to +500 V or +600 V  
· Tolerant to negative transient voltage, dV/dt immune  
· Gate drive supply range from 10 V to 20 V  
· Undervoltage lockout for both channels  
· 3.3 V logic compatible  
V
(IRS2110)  
(IRS2113)  
500 V max.  
600 V max.  
OFFSET  
I +/-  
O
2 A/2 A  
V
OUT  
10 V - 20 V  
· Separate logic supply range from 3.3 V to 20 V  
· Logic and power ground ± 5V offset  
t
(typ.)  
130 ns & 120 ns  
on/off  
· CMOS Schmitt-triggered inputs with pull-down  
· Cycle by cycle edge-triggered shutdown logic  
· Matched propagation delay for both channels  
· Outputs in phase with inputs  
Delay Matching (IRS2110) 10 ns max.  
(IRS2113) 20 ns max.  
Packages  
· RoHS compliant  
Description  
The IRS2110/IRS2113 are high voltage, high speed  
power MOSFET and IGBT drivers with independent  
high-side and low-side referenced output channels. Pro-  
prietary HVIC and latch immune CMOS technologies  
enable ruggedized monolithic construction. Logic in-  
puts are compatible with standard CMOS or LSTTL out-  
put, down to 3.3 V logic. The output drivers feature a  
high pulse current buffer stage designed for minimum  
driver cross-conduction. Propagation delays are  
matched to simplify use in high frequency applications.  
The floating channel can be used to drive an N-channel  
power MOSFET or IGBT in the high-side configuration  
which operates up to 500 V or 600 V.  
16-Lead PDIP  
(w/o leads 4 & 5)  
IRS2110-2 and IRS2113-2  
14-Lead PDIP  
IRS2110 and IRS2113  
16-Lead SOIC  
IRS2110S and  
IRS2113S  
14-Lead PDIP  
(w/o lead 4)  
IRS2110-1 and IRS2113-1  
up to 500 V or 600 V  
Typical Connection  
HO  
VDD  
HIN  
SD  
VB  
VS  
VDD  
HIN  
SD  
TO  
LOAD  
LIN  
VSS  
VCC  
COM  
LO  
LIN  
VSS  
VCC  
(Refer to Lead Assignments for correct pin configuration). This diagram shows electrical connec-  
tions only. Please refer to our Application Notes and DesignTips for proper circuit board layout.  
www.irf.com  
1

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