Datasheet > IRS2104STR

IRS2104STR

更新时间： 2024-05-23 22:22:28

品牌	Logo	应用领域
友台半导体 - UMW		栅极驱动
页数	文件大小	规格书
9页	763K
描述
栅极驱动IC

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数据手册

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IRS2104STR 数据手册

UMW

IRS2104S

700V Half Bridge MOSFET/IGBT Gate Driver

Description

Application

The UMW IRS2104STR is a high voltage, high speed



Motor Control

power MOSFET drivers with dependent high- and low-

side referenced output channels. Proprietary HVIC and

latch immune CMOS technologies enable ruggedized

monolithic construction. The logic input is compatible with

standard CMOS or LSTTL output, down to 3.3 V logic. The

output drivers feature a high pulse current buffer stage

designed for minimum driver cross-conduction. The

floating channel can be used to drive an N-channel

power MOSFET in the high-side configuration which

operates up to 700 V.

Air Conditioners/ WasINg MacINes

General Purpose Inverters

Micro/Mini Inverter Drives

Functional Block Diagram

Features and Benefits



Floating channel designed for bootstrap

operation



Fully operational to +700 V

3.3V, 5V and 15V input logic compatible

Tolerant to negative transient voltage

dV/dt immune



Allowable negative Vs capability: -9V

Gate drive supply range from 10V to 20V

Shut down input turns off both channels

Cross-conduction prevention

Internal 540ns deadtime

Matched propagation delay for both channels

Typically output Source/Sink current capability:

300mA/600mA



Wide operating temperature range -40°C ~125°C

www.umw-ic.com

UTD Semiconductor Co.,Limited

12 3 4 5 6 7...9

中文翻译

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