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IRS2104PBF PDF预览

IRS2104PBF

更新时间: 2024-11-18 03:44:31
品牌 Logo 应用领域
英飞凌 - INFINEON 驱动器接口集成电路光电二极管
页数 文件大小 规格书
15页 255K
描述
HALF-BRIDGE DRIVER

IRS2104PBF 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:ROHS COMPLIANT, PLASTIC, MS-001AB, DIP-8Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.39.00.01
Factory Lead Time:12 weeks风险等级:1.73
Is Samacsys:N内置保护:TRANSIENT; UNDER VOLTAGE
接口集成电路类型:HALF BRIDGE BASED PERIPHERAL DRIVERJESD-30 代码:R-PDIP-T8
长度:9.88 mm功能数量:1
端子数量:8最高工作温度:125 °C
最低工作温度:-40 °C输出电流流向:SOURCE AND SINK
封装主体材料:PLASTIC/EPOXY封装代码:DIP
封装等效代码:DIP8,.3封装形状:RECTANGULAR
封装形式:IN-LINE峰值回流温度(摄氏度):NOT SPECIFIED
电源:15 V认证状态:Not Qualified
座面最大高度:5.33 mm子类别:MOSFET Drivers
最大供电电压:20 V最小供电电压:10 V
标称供电电压:15 V表面贴装:NO
技术:CMOS温度等级:AUTOMOTIVE
端子形式:THROUGH-HOLE端子节距:2.54 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
断开时间:0.22 µs接通时间:0.82 µs
宽度:7.62 mmBase Number Matches:1

IRS2104PBF 数据手册

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PRELIMINARY  
Data Sheet No.PD60267 revA  
IRS2104(S)PbF  
HALF-BRIDGE DRIVER  
Features  
Product Summary  
Floating channel designed for bootstrap operation  
Fully operational to +600 V  
Tolerant to negative transient voltage, dV/dt  
immune  
Gate drive supply range from 10 V to 20 V  
Undervoltage lockout  
3.3 V, 5 V, and 15 V input logic compatible  
Cross-conduction prevention logic  
Internally set deadtime  
High side output in phase with input  
Shut down input turns off both channels  
Matched propagation delay for both channels  
V
600 V max.  
130 mA/270 mA  
10 V - 20 V  
OFFSET  
I +/-  
O
V
OUT  
t
(typ.)  
680 ns/150 ns  
520 ns  
on/off  
Deadtime (typ.)  
Packages  
Description  
The IRS2104 is a high voltage, high speed power  
MOSFET and IGBT driver with dependent high and low  
side referenced output channels. Proprietary HVIC and  
latch immune CMOS technologies enable ruggedized  
monolithic construction. The logic input is compatible  
with standard CMOS or LSTTL output, down to 3.3 V  
8 Lead SOIC  
IRS2104S  
8 Lead PDIP  
IRS2104  
logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-  
conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side  
configuration which operates from 10 V to 600 V.  
Typical Connection  
up to 600 V  
VCC  
VCC  
IN  
VB  
HO  
VS  
IN  
TO  
LOAD  
SD  
SD  
COM  
LO  
(Refer to Lead Assignment for correct pin configuration). This diagram shows electrical  
connections only. Please refer to our Application Notes and DesignTips for proper circuit board layout.  
www.irf.com  
1

IRS2104PBF 替代型号

型号 品牌 替代类型 描述 数据表
IR2104PBF INFINEON

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HALF-BRIDGE DRIVER

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