Data Sheet No. PD60263
IRS2103(S)PbF
HALF-BRIDGE DRIVER
Features
Product Summary
• Floating channel designed for bootstrap operation
• Fully operational to +600 V
V
600 V max.
130 mA/270 mA
10 V - 20 V
OFFSET
• Tolerant to negative transient voltage, dV/dt
immune
I +/-
O
• Gate drive supply range from 10 V to 20 V
• Undervoltage lockout
V
OUT
• 3.3 V, 5 V, and 15 V logic compatible
• Cross-conduction prevention logic
• Matched propagation delay for both channels
• Internal set deadtime
t
(typ.)
680 ns/150 ns
520 ns
on/off
Deadtime (typ.)
• High side output in phase with HIN input
Packages
• Low side output out of phase with
input
ꢀꢁꢂ
Description
The IRS2103 is a high voltage, high speed power
MOSFET and IGBT drivers with dependent high and
low side referenced output channels. Proprietary HVIC
and latch immune CMOS technologies enable rugge-
dized monolithic construction. The logic input is
compatible with standard CMOS or LSTTL output, down
8-Lead SOIC
IRS2103S
8-Lead PDIP
IRS2103
to 3.3 V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-
conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side
configuration which operates up to 600 V.
Typical Connection
ꢊꢋꢌꢍꢎꢌꢏꢐꢐꢌꢃ
ꢃ
ꢄꢄ
ꢃ
ꢄꢄ
ꢃ
ꢅ
ꢇꢁꢂ
ꢀꢁꢂ
ꢇꢁꢂ
ꢀꢁꢂ
ꢇꢈ
ꢑꢈ
ꢀꢈꢒꢓ
ꢃ
ꢆ
ꢄꢈꢉ
ꢀꢈ
(Refer to Lead Assignments for correct configuration). This diagram shows electrical connections only. Please refer to
our Application Notes and DesignTips for proper circuit board layout.
www.irf.com
1