Datasheet > IRS2101STR

IRS2101STR

更新时间： 2024-11-18 17:15:39

品牌	Logo	应用领域
友台半导体 - UMW		栅极驱动
页数	文件大小	规格书
8页	654K
描述
栅极驱动IC

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中文翻译

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IRS2101STR 数据手册

UMW

IRS2101S

700V Half Bridge MOSFET/IGBT Gate Driver

Description

Application

The UMW IRS2101STR is

a high voltage, high



Motor Control

speed power MOSFET drivers with dependent high-

and low-side referenced output channels. Proprietary

HVIC and latch immune CMOS technologies enable

ruggedized monolithic construction. The logic input is

compatible with standard CMOS or LSTTL output,

down to 3.3 V logic. The output drivers feature a high

pulse current buffer stage designed for minimum

driver cross-conduction. The floating channel can be

used to drive an N-channel power MOSFET in

the high-side configuration which operates up to 700

Air Conditioners/ Washing Machines

General Purpose Inverters

Micro/Mini Inverter Drives

Functional Block Diagram

Features and Benefits



Floating channel designed for bootstrap

operation



Fully operational to +700 V

3.3V, 5V and 15V input logic compatible

Tolerant to negative transient voltage

dV/dt immune



Allowable negative Vs capability: -9V

Gate drive supply range from 10V to 20V

Matched propagation delay for both channels

Wide operating temperature range -40°C ~125°C

Typically output Source/Sink current capability:

300mA/600mA

www.umw-ic.com

UTD Semiconductor Co.,Limited

12 3 4 5 6 7 8

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