Data Sheet No. PD60250
IRS2101(S)PbF
HIGH AND LOW SIDE DRIVER
Features
Product Summary
• Floating channel designed for bootstrap operation
• Fully operational to +600 V
• Tolerant to negative transient voltage, dV/dt immune
• Gate drive supply range from 10 V to 20 V
• Undervoltage lockout
V
600 V max.
130 mA/270 mA
10 V - 20 V
160 ns/150 ns
50 ns
OFFSET
I +/-
O
V
OUT
• 3.3 V, 5 V, and 15 V logic input compatible
• Matched propagation delay for both channels
• Outputs in phase with inputs
t
(typ.)
on/off
• RoHS compliant
Delay Matching
Description
Packages
The IRS2101 is a high voltage, high speed power
MOSFET and IGBT driver with independent high-side
and low-side referenced output channels. Proprietary
HVIC and latch immune CMOS technologies enable
ruggedized monolithic construction. The logic input
is compatible with standard CMOS or LSTTL output,
down to 3.3 V logic. The output drivers feature a high
pulse current buffer stage designed for minimum driver
cross-conduction. The floating channel can be used to
drive an N-channel power MOSFET or IGBT in the high-
side configuration which operates up to 600 V.
8-Lead SOIC
IRS2101S
8-Lead PDIP
IRS2101
Typical Connection
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IRS2101
(Refer to Lead Assignments for correct pin configuration). This diagram shows electrical connections only.
Please refer to our Application Notes and DesignTips for proper circuit board layout.
www.irf.com
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