Datasheet > IRS2008STR

IRS2008STR

更新时间： 2024-11-25 17:15:31

品牌	Logo	应用领域
友台半导体 - UMW		栅极驱动
页数	文件大小	规格书
9页	1105K
描述
栅极驱动IC

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IRS2008STR 数据手册

UMW

IRS2008S

250V Half Bridge MOSFET/IGBT Gate Driver

Description

Application

The IRS2008S is a high voltage, high speed



Motor Control

Air Conditioners/ Washing Machines

General Purpose Inverters

Micro/Mini Inverter Drives

power MOSFET drivers with dependent high- and

low-side referenced output channels. Proprietary

HVIC and latch immune CMOS technologies enable

ruggedized monolithic construction. The logic input is

compatible with standard CMOS or LSTTL output,

down to 3.3 V logic. The output drivers feature a

high pulse current buffer stage designed for

minimum driver cross-conduction. The floating

channel can be used to drive an N-channel power

MOSFET in the high-side configuration which

operates up to 250 V.

Features and Benefits

Functional Block Diagram



Floating channel designed for bootstrap

operation



Fully operational to +250 V

3.3V, 5V and 15V input logic compatible

dV/dt noise Immunity ±50 V/nsec

Allowable negative Vs capability: -9V

Gate drive supply range from 10V to 20V

Undervoltage lockout for both channels

--UVLO forward 8.9V

--UVLO reverse 8.2V



Cross-conduction prevention logic

--Deadtime 520ns

Propagation delay

--Ton/Toff =680ns/150ns



Wide operating temperature range -40°C ~125°C

Typically output Source/Sink current capability:

290mA/600mA

www.umw-ic.com

UTD Semiconductor Co.,Limited

12 3 4 5 6 7...9

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