Datasheet > IRLZ24S, IRLZ24L, SiHLZ24S, SiHLZ24L

IRLZ24S, IRLZ24L, SiHLZ24S, SiHLZ24L

更新时间： 2024-11-02 14:54:31

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
14页	425K
描述
Power MOSFET

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IRLZ24S, IRLZ24L, SiHLZ24S, SiHLZ24L 数据手册

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IRLZ24S, IRLZ24L, SiHLZ24S, SiHLZ24L

www.vishay.com

Vishay Siliconix

Power MOSFET

FEATURES

• Surface-mount

• Available in tape and reel

• Dynamic dv/dt rating

• Logic-level gate drive

• R_{DS (on)}specified at V_GS= 4 V and 5 V

• 175°C operating temperature

• Fast switching

I²PAK (TO-262)

D²PAK (TO-263)

Available

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

Note

This datasheet provides information about parts that are

RoHS-compliant and / or parts that are non RoHS-compliant. For

example, parts with lead (Pb) terminations are not RoHS-compliant.

Please see the information / tables in this datasheet for details



N-Channel MOSFET



PRODUCT SUMMARY

V_DS(V)

DESCRIPTION

0.10

Third generation power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

The D²PAK is a surface-mount power package capable of

accommodating die sizes up to HEX-4. It provides the

highest power capability and the lowest possible

on-resistance in any existing surface-mount package. The

D²PAK is suitable for high current applications because of

its low internal connection resistance and can dissipate up

to 2.0 W in a typical surface-mount application.

R_DS(on)()

V_GS= 5 V

Q_gmax. (nC)

_gs(nC)

_gd(nC)

4.5

Configuration

Single

The through-hole version (IRLZ24L, SiHLZ24L) is available

for low profile application.

ORDERING INFORMATION

Package

Lead (Pb)-free and halogen-free

Lead (Pb)-free

D²PAK (TO-263)

SiHLZ24S-GE3

IRLZ24SPbF

I²PAK (TO-262)

SiHLZ24L-GE3

IRLZ24LPbF

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-source voltage

Gate-source voltage

V_DS

V_GS

_C= 25 °C

Continuous drain current

V_GSat 5 V

I_D

T_C= 100 °C

Pulsed drain current ^a

I_DM

Linear derating factor

0.40

0.025

110

W/°C

Linear derating factor (PCB mount) ^e

Single pulse avalanche energy ^b

Maximum power dissipation

Maximum power dissipation (PCB mount) ^e

Peak diode recovery dv/dt ^c

E_AS

P_D

_C= 25 °C

T_A= 25 °C

3.7

dv/dt

4.5

V/ns

°C

Operating junction and storage temperature range

Soldering recommendations (peak temperature) ^d

T_J, T_stg

-55 to +175

300

For 10 s

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)

b. V_DD= 25 V, starting T_J= 25 °C, L = 444 μH, R_g= 25 , I_AS= 17 A (see fig. 12)

c. I_SD 17 A, di/dt  140 A/μs, V_DD V_DS, T_J 175 °C

d. 1.6 mm from case

e. When mounted on 1" square PCB (FR-4 or G-10 material)

S20-0684-Rev. D, 07-Sep-2020

Document Number: 90416

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7...14

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与IRLZ24S, IRLZ24L, SiHLZ24S, SiHLZ24L相关器件

型号	品牌	获取价格	描述	数据表
IRLZ24SPBF	INFINEON	获取价格	Power Field-Effect Transistor, 17A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal
IRLZ24SPBF	VISHAY	获取价格	TRANSISTOR 17 A, 60 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, SMD-220, 3 PIN, FE
IRLZ24STRL	INFINEON	获取价格	HEXFET POWER MOSFET
IRLZ24STRR	INFINEON	获取价格	Power Field-Effect Transistor, 17A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal
IRLZ30	SAMSUNG	获取价格	Power Field-Effect Transistor, 25A I(D), 50V, 0.07ohm, 1-Element, N-Channel, Silicon, Meta
IRLZ34	VISHAY	获取价格	Power MOSFET
IRLZ34	NXP	获取价格	N-channel enhancement mode Logic level TrenchMOS transistor
IRLZ34	INFINEON	获取价格	HEXFET POWER MOSFET
IRLZ34_11	VISHAY	获取价格	Power MOSFET
IRLZ34-002	INFINEON	获取价格	Power Field-Effect Transistor, 30A I(D), 60V, 0.05ohm, 1-Element, N-Channel, Silicon, Meta

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