IRLZ24PBF

更新时间： 2024-11-01 05:39:31

品牌	Logo	应用领域
威世 - VISHAY		晶体晶体管开关脉冲局域网
页数	文件大小	规格书
8页	1617K
描述
Power MOSFET

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中文翻译

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数据手册
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IRLZ24PBF 数据手册

IRLZ24, SiHLZ24

Vishay Siliconix

Power MOSFET

FEATURES

• Dynamic dV/dt Rating

PRODUCT SUMMARY

V_DS(V)

Available

• Logic-Level Gate Drive

R_DS(on)(Ω)

V_GS= 5.0 V

0.10

RoHS*

• R_DS(on)Specified at V_GS= 4 V and 5 V

• 175 °C Operating Temperature

• Fast Switching

COMPLIANT

Q_g(Max.) (nC)

4.5

_gs(nC)

_gd(nC)

• Ease of Paralleling

Configuration

Single

• Simple Drive Requirements

• Lead (Pb)-free Available

TO-220

DESCRIPTION

Third generation Power MOSFETs from Vishay provides the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and cost

effectiveness.

The TO-220 package is universally preferred for all

commercial-industrial applications at power dissipation

levels to approximately 50 W. The low thermal resistance

and low package cost of the TO-220 contribute to its wide

acceptance throughout the industry.

N-Channel MOSFET

ORDERING INFORMATION

Package

TO-220

IRLZ24PbF

SiHLZ24-E3

IRLZ24

Lead (Pb)-free

SnPb

SiHLZ24

ABSOLUTE MAXIMUM RATINGS T_C= 25 °C, unless otherwise noted

PARAMETER

SYMBOL

LIMIT

UNIT

Gate-Source Voltage

V_GS

T_C= 25 °C

T_C=100°C

Continuous Drain Current

V_GSat 5.0 V

I_D

Pulsed Drain Current^a

I_DM

0.40

Linear Derating Factor

W/°C

Single Pulse Avalanche Energy^b

E_AS

P_D

110

Maximum Power Dissipation

T_C= 25 °C

Peak Diode Recovery dV/dt^c

dV/dt

T_J, T_stg

4.5

V/ns

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

- 55 to + 175

300^d

°C

for 10 s

lbf · in

N · m

Mounting Torque

6-32 or M3 screw

1.1

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V_DD= 25 V, starting T_J= 25 °C, L = 444 µH, R_G= 25 Ω I_AS= 17 A (see fig. 12).

c. I_SD≤ 17 A, dI/dt ≤ 140 A/µs, V_DD≤ V_DS, T_J≤ 175 °C.

d. 1.6 mm from case.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91326

www.vishay.com

S-Pending-Rev. A, 21-Jul-08

WORK-IN-PROGRESS

12 3 4 5 6 7 8

中文翻译

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IRLZ24PBF 替代型号

型号	品牌	替代类型	描述	数据表
IRLZ24	VISHAY	完全替代	Power MOSFET

与IRLZ24PBF相关器件

型号	品牌	获取价格	描述	数据表
IRLZ24S	VISHAY	获取价格	Power MOSFET
IRLZ24S	INFINEON	获取价格	HEXFET POWER MOSFET
IRLZ24S, IRLZ24L, SiHLZ24S, SiHLZ24L	VISHAY	获取价格	Power MOSFET
IRLZ24SPBF	INFINEON	获取价格	Power Field-Effect Transistor, 17A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal
IRLZ24SPBF	VISHAY	获取价格	TRANSISTOR 17 A, 60 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, SMD-220, 3 PIN, FE
IRLZ24STRL	INFINEON	获取价格	HEXFET POWER MOSFET
IRLZ24STRR	INFINEON	获取价格	Power Field-Effect Transistor, 17A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal
IRLZ30	SAMSUNG	获取价格	Power Field-Effect Transistor, 25A I(D), 50V, 0.07ohm, 1-Element, N-Channel, Silicon, Meta
IRLZ34	VISHAY	获取价格	Power MOSFET
IRLZ34	NXP	获取价格	N-channel enhancement mode Logic level TrenchMOS transistor

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