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IRLZ24NSTRRPBF PDF预览

IRLZ24NSTRRPBF

更新时间: 2024-11-01 14:51:39
品牌 Logo 应用领域
英飞凌 - INFINEON 局域网开关脉冲晶体管
页数 文件大小 规格书
11页 304K
描述
Power Field-Effect Transistor, 18A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC PACKAGE-3

IRLZ24NSTRRPBF 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:SMALL OUTLINE, R-PSSO-G2Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.59
其他特性:LOGIC LEVEL COMPATIBLE, AVALANCHE RATED, HIGH RELIABILITY雪崩能效等级(Eas):68 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:55 V最大漏极电流 (ID):18 A
最大漏源导通电阻:0.075 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):72 A
认证状态:Not Qualified表面贴装:YES
端子面层:MATTE TIN OVER NICKEL端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:30
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IRLZ24NSTRRPBF 数据手册

 浏览型号IRLZ24NSTRRPBF的Datasheet PDF文件第2页浏览型号IRLZ24NSTRRPBF的Datasheet PDF文件第3页浏览型号IRLZ24NSTRRPBF的Datasheet PDF文件第4页浏览型号IRLZ24NSTRRPBF的Datasheet PDF文件第5页浏览型号IRLZ24NSTRRPBF的Datasheet PDF文件第6页浏览型号IRLZ24NSTRRPBF的Datasheet PDF文件第7页 
PD - 95584  
IRLZ24NSPbF  
IRLZ24NLPbF  
l Logic-Level Gate Drive  
l Advanced Process Technology  
l SurfaceMount(IRLZ24NS)  
l Low-profilethrough-hole(IRLZ24NL)  
l 175°C Operating Temperature  
l Fast Switching  
l Fully Avalanche Rated  
l Lead-Free  
Description  
HEXFET® Power MOSFET  
D
VDSS = 55V  
RDS(on) = 0.06Ω  
G
ID = 18A  
S
Fifth Generation HEXFETs from International Rectifier  
utilize advanced processing techniques to achieve  
extremely low on-resistance per silicon area. This  
benefit, combined with the fast switching speed and  
ruggedized device design that HEXFET Power MOSFETs  
arewellknownfor, providesthedesignerwithanextremely  
efficient and reliable device for use in a wide variety of  
applications.  
The D2Pak is a surface mount power package capable of  
accommodating die sizes up to HEX-4. It provides the  
highest power capability and the lowest possible on-  
resistance in any existing surface mount package. The  
D2Pak is suitable for high current applications because of  
its low internal connection resistance and can dissipate  
up to 2.0W in a typical surface mount application.  
The through-hole version (IRLZ24NL) is available for low-  
profileapplications.  
2
TO-262  
D
Pak  
Absolute Maximum Ratings  
Parameter  
Max.  
18  
Units  
ID @ TC = 25°C  
ID @ TC = 100°C  
IDM  
Continuous Drain Current, VGS @ 10Vꢀ  
Continuous Drain Current, VGS @ 10Vꢀ  
Pulsed Drain Current ꢀ  
13  
A
72  
PD @TA = 25°C  
PD @TC = 25°C  
Power Dissipation  
3.8  
45  
W
W
Power Dissipation  
Linear Derating Factor  
0.30  
±16  
68  
W/°C  
V
VGS  
EAS  
IAR  
Gate-to-Source Voltage  
Single Pulse Avalanche Energy‚ꢀ  
Avalanche Current  
mJ  
11  
A
EAR  
dv/dt  
TJ  
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt ƒꢀ  
Operating Junction and  
4.5  
5.0  
mJ  
V/ns  
-55 to + 175  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 seconds  
°C  
300 (1.6mm from case )  
Thermal Resistance  
Parameter  
Junction-to-Case  
Typ.  
–––  
Max.  
3.3  
Units  
°C/W  
1
RθJC  
RθJA  
Junction-to-Ambient ( PCB Mounted,steady-state)**  
–––  
40  
www.irf.com  
07/20/04  

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